Flicker free infrared simulator with resistor bridges

• US 4,922,116 A
• Filed: 06/21/1989
• Issued: 05/01/1990
• Est. Priority Date: 08/04/1988
• Status: Expired due to Term

• Current Assignee: Utah State University Research Foundation (Utah State University)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Grinberg, Jan, Welkowsky, Murray S.
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US07/370,109
• Time in Patent Office: 314 Days
• Field of Search: 250/495.1, 250/504 R, 250/443.1, 273/348.1, 219/553
• US Class Current: 250/495.1
• CPC Class Codes: G01J 5/10 using electric radiation detectors
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: G01J 5/53 Reference sources, e.g. standard lamps; Black bodies
• CPC Class Codes: H01L 27/1465 of the hybrid type

Abstract

An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.

Claims

1. An infrared (IR) simulator, comprising:

a substrate formed from an insulative material, and

an array of pixel cells on said substrate, each of said cells comprising;

a resistor bridge spanning a portion of the cell and contacting the substrate at spaced apart contact locations within the cell, said bridge being shaped to form a thermally insulative gap between the bridge and substrate between said contact locations,

a semiconductor drive circuit on said substrate for enabling a desired amount of current flow through said resistor bridge in response to an input control signal for heating the bridge and thereby producing IR radiation therefrom, and

control, actuating and power lead lines for respectively delivering control and actuating signals to said drive circuit, and an electrical power signal to said resistor bridge.

2. The IR simulator of claim 1, wherein said drive circuits are located on the substrate surface under the resistor bridges of their respective pixel cells.

3. The IR simulator of claim 2, wherein at least some of said lead lines extend under the resistor bridge of their respective pixel cells.

4. The IR simulator of claim 2, each pixel cell further comprising a thermally reflective element disposed between the resistor bridge and drive circuit of said cell, said thermally reflective element reflecting IR radiation received from said resistor bridge.

5. The IR simulator of claim 4, said thermally reflective element for each pixel cell comprising a bridge formed from a thermally reflective material bridging said drive circuit and spaced from both said drive circuit and said resistor bridge.

6. The IR simulator claim 4, said thermally reflective element for each pixel cell comprising an insulative layer overlying said drive circuit, and a thermally reflective layer overlying said insulative layer.

7. The IR simulator of claim 1, wherein said substrate comprises sapphire.

8. The IR simulator of claim 7, wherein said semiconductive drive circuit is formed from silicon.

9. The IR simulator of claim 1, said drive circuit comprising a sample and hold circuit having first and second transistors and a capacitor, said first transistor connected to apply a control signal to said capacitor and to a control input to said second transistor in response to an actuating signal, said capacitor holding the control input to said second transistor at a substantially constant level, and said second transistor being connected to apply a power signal to said resistor bridge in an amount determined by the control signal at its control input.

10. The IR simulator of claim 1, wherein the impedance of said resistor bridge substantially matches the drive circuit impedance.

11. The IR simulator of claim 1, wherein the resistor bridge from each pixel cell comprises a base bridge formed from an insulative material, and a generally conductive layer over said base bridge, the resistivity and thickness of said generally conductive layer being selected to produce a desired resistance for said resistor bridge.

13. The IR simulator of claim 11, wherein said generally conductive layer comprises a cermet-metal material.

14. The IR simulator of claim 11, wherein said generally conductive layer is surmounted by a coating of high thermal emissive material.

15. The IR simulator of claim 1, wherein said resistor bridge is formed from a material having an enhanced porosity which decreases its thermal conductivity.

16. The IR simulator of claim 1, further comprising means for cooling said substrate.

17. The IR simulator of claim 1, the resistor bridge for each pixel cell comprising a center span and a pair of legs extending upward from the substrate and supporting the center span, wherein the cross-sectional areas of said legs are tapered in a decreasing fashion toward said center span from cross-sectional areas at the substrate which exceed that of the center span, thereby concentrating the voltage drop across the bridge and the resultant heating at the center span spaced from the substrate.

12. The IR simulator of claim wherein said generally conductive layer comprises a metal.

18. An infrared (IR) simulator system, comprising

(a) a vacuum housing having an IR window,

(b) an IR pattern generator within said housing, comprising:

(1) a substrate formed from an insulative material, and

(2) an array of pixel cells on said substrate arranged in a matrix of rows and columns, each of said cells comprising;

(i) a resistor bridge spanning a portion of the cell and contacting the substrate at spaced apart contact locations within the cell, said bridge being shaped to form a thermally insulative gap between the bridge and substrate between said contact locations, and

(ii) a semiconductive drive circuit on said substrate for enabling a desired amount of current flow through said resistor bridge in response to input control and strobe signals to heat the bridge and thereby transmit IR radiation therefrom through said IR window,

(3) a series of control lead lines for delivering respective control signals to each column of pixel cells,

(4) a series of strobe lead lines for delivering respective strobe signal to each row of pixel cells,

(5) a series of power lead lines for delivering an electrical power signal to said pixel cells, and

(6) cooling means on the opposite side of said substrate from said pixel cells,

(c) means for applying successive sets of input control signals to said control lead lines,

(d) means for applying strobe signals to each of said strobe lead lines in succession, said strobe signals being applied in synchronism with said input control signals to direct said control signals to desired pixel cells, and

(e) optical means in the path of IR radiation transmitted from said IR pattern generator through said IR window for optically conditioning said radiation for detection by an IR detector.

19. The IR simulator of claim 18, wherein said drive circuits are located on the substrate surface under the resistor bridges of their respective pixel cells.

20. The IR simulator of claim 19, wherein at least some of said lead lines extend under the resistor bridge of their respective pixel cells.

21. The IR simulator of claim 19, each pixel cell further comprising a thermally reflective element disposed between the resistor bridge and drive circuit of said cell, said thermally reflective element reflecting IR radiation received from said resistor bridge.

22. The IR simulator of claim 18, wherein said substrate comprises sapphire.

23. The IR simulator of claim 22, wherein said semiconductive drive circuit is formed from silicon.

24. An infrared (IR) radiating element, comprising:

a substrate formed from an insulative material,

a resistor bridge spanning a portion of said substrate and contacting the substrate at spaced apart contact locations, said bridge being shaped to form a thermally insulative gap between the bridge and substrate between said contact locations, and

a semiconductive drive circuit on said substrate for directing a current through said bridge to heat the bridge and thereby produce IR radiation therefrom.

25. The IR radiating element of claim 24, wherein said drive circuit is located on the substrate surface under said resistor bridge.

26. The IR radiating element of claim 24, further comprising a thermally reflective element disposed under and spaced from the resistor bridge, said thermally reflective element reflecting IR radiation received from said resistor bridge.

27. The IR radiating element of claim 26, wherein said drive circuit is located on the substrate surface under said thermally reflective element.

28. The IR radiating element of claim 27, said thermally reflective element comprising a bridge formed from a thermally reflective material bridging said drive circuit and spaced from both said drive circuit and said resistor bridge.

29. The IR radiating element of claim 27, said thermally reflective element for each pixel cell comprising an insulative layer overlying said drive circuit, and a thermally reflective layer overlying said insulative layer.

30. The IR radiating element of claim 24, wherein said substrate comprises sapphire.

31. The IR radiating element of claim 30, wherein said semiconductive drive circuit is formed from silicon.

32. The IR radiating element of claim 24, wherein the impedance of said resistor bridge substantially matches the drive circuit impedance.

33. The IR radiating element of claim 24, wherein said resistor bridge comprises a base bridge formed from an insulative material, and a generally conductive layer over said base bridge, the resistivity and thickness of said generally conductive layer being selected to produce a desired resistance for said resistor bridge.

34. The IR radiating element of claim 33, wherein said generally conductive layer comprises a metal.

35. The IR radiating element of claim 33, wherein said generally conductive layer comprises a cermet-metal material.

36. The IR radiating element of claim 33, wherein said generally conductive layer is surmounted by a coating of high thermal emissive material.

37. The IR radiating element of claim 24, wherein said resistor bridge is formed from a material having an enhanced porosity which decreases its thermal conductivity.

38. The IR radiating element of claim 24, said resistor bridge comprising a center span and a pair of legs extending upward form the substrate and supporting the center span, wherein the cross-sectional areas of said legs are tapered in a decreasing fashion toward said center span from cross-sectional areas at the substrate which exceed that of the center span, thereby concentrating the voltage drop across the bridge and the resultant heating at the center span spaced from the substrate.