Optical modulators based on polymers

• US 4,923,288 A
• Filed: 05/20/1988
• Issued: 05/08/1990
• Est. Priority Date: 05/21/1987
• Status: Expired due to Term

• Current Assignee: IPIFS Guarantee Corp., Buckhorn Inc (Myers Industries Incorporated)
• Original Assignee: BP PLC
• Inventors: Allen, Philip C., Harrison, Alan J., Friend, Richard H., Burroughes, Jeremy H.
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): McCutcheon, Nathan
• Application Number:
  US07/196,409
• Time in Patent Office: 718 Days
• Field of Search: 350/353, 350/355, 350/356, 357/8, 357/4, 357/65
• US Class Current: 359/276
• CPC Class Codes: G02F 1/015 based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction G02F1/03 takes precedence

Abstract

This invention relates to a device for electrooptic modulation of an optical beam. The device is a laminate comprising a coherent film of a conjugated polymer having semi-conducting properties as the active component laminated with two or more layers of electrically conducting, insulating or semi-conducting materials. At least the active component in the laminate is capable of interacting with the optical beam when under the influence of an electric signal and thereby result in a modulated beam. Means are provided for (i) establishing electrical contact with one or more layers of the laminate so as to enable an electrical signal to be applied across the active component and (ii) detection of the extent of modulation of the modulated beam emerging from the active component layer.

Claims

1. A device for electrooptic modulation of an optical beam, said device being a laminate comprising a coherent film of a conjugated polymer having semi-conducting properties as the active component laminated with two or more layers of electrically conducting, insulating or semi-conducting materials or combinations thereof, at least the active component in the laminate being capable of interacting with the optical beam when under the influence of an electric signal and thereby result in a modulated beam, means for establishing electrical contact with one or more layers of the laminate in such a manner that enables an electrical signal to be applied across the active component in the laminate and means for detection of the extent of modulation of the modulated beam energing from the active component layer.

2. A device for electrooptic modulation of an optical beam according to claim 1 wherein the active component is sandwiched between two layers of an electrically conducting material, one layer being capable of forming an ohmic contact with and the other layer being capable of forming a rectifying contact with the active component, these layers of the device being provided with means for establishing electrical contact in a manner that enables an electrical signal to be applied across the active component.

3. A device for electrooptic modulation of an optical beam according to claim 1 wherein said laminate comprises in a sequence a layer of electrically conducting material, an active component, a layer of highly insulating material and a layer of electrically conducting material.

4. A device according to claim 1 wherein the conductivity of the active component is within the range of 10^-10 to 10^-2 ohm^-1 cm^-1.

5. A device according to claim 1 wherein the coherent film of a conjugated polymer having semi-conducting properties is that of a polymer selected from poly(acetylene), polyparaphenylene, polyphenylene sulphide, polydiphenyl diphenylene vinylene, perfluoro poly(1,6 heptadiyne), polyphenylene vinylene, polythienylene vinylene or polyfuranylene vinylene.

6. A device according to claim 1 wherein the coherent film of a conjugated polymer is that of poly(acetylene) having a conductivity of from 10^-9 to 10^-4 ohm^-1 cm^-1 and a density of about 1 g/cc.

7. A device according to claim 1 wherein the active component has a thickness of up to 50 micrometers.

8. A device according to claim 1 wherein the active component is a coherent film of an intrinsically p-type doped poly(acetylene).

9. A device according to claim 2 wherein the ohmic layer is of a material which has a metal work function larger than that of a semi-conductor of p-type doped polymer and smaller than that of a semi-conductor of an n-type polymer.

10. A device according to claim 9 wherein the ohmic layer is of a material selected from graphite, nickel, platinum, gold or indium-tin oxide.

11. A device according to claim 9 wherein the thickness of the ohmic layer is from 0.01 to 1.0 micrometer.

12. A device according to claim 2 wherein the rectifying layer is that of a material having a metal work function larger than that of a semi-conductor of an n-type doped polymer but smaller than that of a semi-conductor of a p-type doped polymer.

13. A device according to claim 12 wherein the rectifying layer is that of indium or aluminium.

14. A device according to claim 12 wherein the thickness of the rectifying layer is from 0.005 to 0.05 micrometer.

15. A device according to claim 3 wherein the layers of electrically conducting material are metallic layers each having a thickness of 0.005 to 0.05 micrometer.

16. A device according to claim 15 wherein the metallic layers are at least one of gold or chromium.

17. A device according to claim 3 wherein pairs of conducting contacts selected from aluminium, gold and poly-n-silicon are arranged to give a short separation between each other and are introduced at the interface between the active component which is the semi-conductor and the insulating layer.

18. A device according to claim 3 wherein the insulating layer sandwiched between the active component, which is a polymer film, and the layer of conducting material is that of a material having a high dielectric breakdown field and a high dielectric constant.

19. A device according to claim 18 wherein the insulating layer is of a material selected from silicon dioxide, other inorganic insulators and polymeric insulators.

20. A device according to claim 18 wherein the insulating layer is a spin coated film of poly(methyl methacrylate), cis-poly(acetylene), or poly(diacetylene) films deposited as Langmuir Blodgett films of the monomer.

21. A device according to claim 3 wherein the thickness of the insulating layer is from 0.02 to 1.00 micrometer.

22. A process for the electrooptic modulation of an optical beam, said process comprising

(a) allowing the beam to be incident upon an active component which comprises a coherent film of a conjugated polymer having semiconducting properties and being capable of interacting with said incident beam when under the influence of an electric signal,

(b) simultaneously, during the period when the beam is incident upon the active component, applying to said active component a variable electrical signal whereby the applied signal causes the intensity of the incident beam to be modulated and emerge from the active component as a modulated beam, and

(c) means for detection of the extent of modulation in the modulated beam.