Enhancement of ultraviolet laser ablation and etching organic solids

• US 4,925,523 A
• Filed: 07/17/1989
• Issued: 05/15/1990
• Est. Priority Date: 10/28/1988
• Status: Expired due to Term

• Current Assignee: Lasersight Patents, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Braren, Bodil E., Srinivasan, Rangaswamy
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/380,787
• Time in Patent Office: 302 Days
• Field of Search: 250/492.1, 250/492.2, 250/492.3, 250/494.1, 250/503.1, 250/504 R, 156/643, 156/651, 156/654, 156/655, 156/659.1, 156/668, 219/121.67, 219/121.68, 219/121.69, 219/121.74, 219/121.75, 219/121.76, 219/121.77, 427/53.1
• US Class Current: 216/66
• CPC Class Codes: A61B 18/20 using laser
• CPC Class Codes: A61B 2017/00176 Two pulses, e.g. second pulse having an effect different from the first one
• CPC Class Codes: A61B 2018/207 mixing two wavelengths
• CPC Class Codes: B23K 26/0604 by a combination of beams
• CPC Class Codes: B23K 26/0613 having a common axis B23K26/0619 takes precedence
• CPC Class Codes: B23K 26/066 by using masks

Abstract

A method and apparatus are described which enhance the ablative effect of a UV laser. The ablative effect of a pulsed UV laser is enhanced using a second, longer wavelength pulsed laser. Each pulse of the first laser is followed by or combined with a pulse from the second laser. The etch depth per pulse is controlled by varying the time between pulses from the first and second lasers. The maximum etch depth per pulse occurs at a time separation which is a function of the substrate being etched. The first laser wavelength is selected to be within the absorption spectrum of the unexcited surface molecules of the substrate, while the wavelength of the second laser is selected to be within the absorption spectrum of the surface molecules excited by the incident radiation of the first laser.

Claims

1. A method of ablating a portion of a substrate, comprising the steps of:

exposing said substrate to a first radiation pulse at a first ultraviolet wavelength; and

exposing said substrate to a second radiation pulse at a second, longer ultraviolet wavelength, at least one of said first or second radiation pulses being of sufficient energy fluence to exceed the threshold for ablative photodecomposition of said substrate.

2. The method of claim 1 wherein:

said first and second radiation pulses are substantially simultaneous in time.

3. The method of claim 1 wherein:

said first radiation pulse irradiates said substrate prior to said second radiation pulse.

4. The method of claim 3 wherein:

said first radiation pulse precedes said second radiation pulse by a predetermined time interval.

5. The method of claim 4 wherein:

said predetermined time interval is selected to maximize the etch depth per pair of said first and second radiation pulses.

6. The method of claim 1 wherein:

said one of said first and second radiation pulses is said second pulse.

7. The method of claim 6 wherein:

said first and second pulses are substantially simultaneous in time.

8. The method of claim 6 wherein:

said first radiation pulse precedes said second radiation pulse by a predetermined time interval.

9. The method of claim 8 wherein:

said predetermined time interval is selected to maximize the etch depth per pair of said first and second radiation pulses.

10. The method of any of the preceding claims wherein:

said substrate is an organic material.

11. The method of any of claims 1-9 wherein:

said ultraviolet wavelengths are defined as wavelengths between 150 nm and 400 nm.

12. The method of any of claims 1-9 wherein:

said steps are repeated a predetermined number of times.

13. A method of etching a portion of a substrate, comprising the steps of:

irradiating said portion of said substrate with a first pulse of ultraviolet radiation for a time sufficient to cause a transient change in the absorption characteristics of said portion of said substrate; and

irradiating said portion of said substrate with a second pulse of longer wavelength ultraviolet radiation with sufficient energy fluence to cause ablative photodecomposition of said portion of said substrate.

14. The method of claim 13 wherein:

said irradiating steps are repeated a predetermined number of times.

15. The method of claim 13 wherein:

said irradiating steps occur simultaneously.

16. The method of claim 13 wherein:

said first pulse precedes said second pulse.

17. The method of claim 16 wherein:

said first pulse precedes said second pulse by a predetermined interval of time.

18. The method of claim 17 wherein:

said predetermined interval of time is selected to optimize the etch depth per pair of said first and second pulses.

19. The method of claim 13 wherein:

said substrate is an organic polymer.

20. A method of ablatively photodecomposing polymers and biological layers without substantial thermal effects wherein:

photodecomposition is accomplished by irradiating said layers with multiple wavelength radiation of sufficient energy fluence to exceed the threshold of ablative photodecomposition of said layers, at least one of said wavelengths being in the ultraviolet range.

21. The method of claim 20 wherein:

said radiation comprises laser pulses of distinct wavelengths; and

said laser pulses are spacially coincident.

22. The method of claim 21 wherein:

said laser pulses are spaced in time, a pulse of said one wavelength radiation in the ultraviolet range preceding a pulse of second wavelength radiation by a predetermined period.

23. The method of claim 22 wherein:

said pulse of second wavelength radiation is within the ultraviolet range.

24. A method of etching a portion of a substrate, comprising the steps of:

irradiating said portion of said substrate with a first radiation pulse whose wavelength is within the absorption spectrum of said substrate;

irradiating said portion of said substrate with a second, longer wavelength radiation pulse at a predetermined time after irradiating the substrate with said first radiation pulse;

at least one of said pulses having sufficient energy fluence to exceed the threshold for ablative photodecomposition of said substrate.

25. The method of claim 24 wherein:

said wavelength of said second, longer wavelength radiation pulse is within the absorption spectrum of molecules of said substrate excited by irradiating said portion with said first radiation pulse.

26. The method of claim 24 wherein:

said first and second radiation pulses are laser pulses; and

each said first pulse is followed at said predetermined time by said second pulse.

27. The method of claim 26 wherein:

irradiation of said substrate by said first and second laser pulses continues for a predetermined number of pulses.

28. A method of etching a portion of a substrate, comprising the steps of:

irradiating said substrate with a first light pulse of sufficient photon energy to cause surface molecules of said substrate to be converted to a singlet state, said photon energy of said first light source being further sufficient to photochemically ablate at least some of said molecules raised to said singlet state; and

irradiating said substrate with a second light pulse having sufficient photon energy to cause a portion of said molecules not photochemically ablated by said first light source to absorb sufficient energy to photochemically ablate.

29. An apparatus for enhancing ablation of a portion of a substrate comprising:

a first radiation source for generating radiation of a first wavelength;

a second radiation source for generating radiation of a second longer wavelength;

means for directing radiation from said first and second radiation sources to substantially the same area of said substrate;

means associated with said first and second radiation sources for controlling the time separation between generation of radiation by said first and second radiation sources.

30. The apparatus of claim 29 wherein:

said radiation of said second wavelength is of sufficient energy fluence to cause ablative photodecomposition of said substrate area when said area is irradiated by said radiation of said first wavelength.