Method for preparing thin film of compound oxide superconductor by ion beam techniques

• US 4,925,829 A
• Filed: 05/25/1988
• Issued: 05/15/1990
• Est. Priority Date: 05/26/1987
• Status: Expired due to Term

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Tanaka, Saburo, Itozaki, Hideo, Yazu, Shuji, Jodai, Tetsuji, Fujita, Nobuhiko
• Primary Examiner(s): Morgenstern, Norman
• Assistant Examiner(s): King, Roy V.
• Application Number:
  US07/198,260
• Time in Patent Office: 720 Days
• Field of Search: 427/38, 427/62, 427/63, 427/255.3, 427/42, 427/126.3, 505/1, 505/731, 505/732, 505/730
• US Class Current: 505/473
• CPC Class Codes: H10N 60/0381 by evaporation independent of heat source, e.g. MBE
• CPC Class Codes: H10N 60/0604 Monocrystalline substrates, e.g. epitaxial growth
• CPC Class Codes: H10N 60/0884 Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam, X-rays irradiation devices G21K, H01J
• CPC Class Codes: H10N 60/857 comprising copper oxide
• CPC Class Codes: Y10S 505/731 Sputter coating
• CPC Class Codes: Y10S 505/732 Evaporative coating with superconducting material

Abstract

A method for preparing a thin film of a composite copper oxide superconductor with a deposition source of the compound copper oxide, by applying an oxygen ion beam from an ion source onto a substrate while changing beam intensity during formation of the superconducting thin film, thereby to physically deposit evaporative particles from the deposition source on the substrate.

Claims

1. In a method for preparing a thin film of superconductor composed of a compound copper oxide on a substrate employing a physical vapor deposition technique, the improvement which comprises irradiating the substrate on which evaporated particles from a vapor source are deposited with an oxygen ion beam the intensity of which is varied in time while the evaporated particles are deposited on the substrate.

2. A method in accordance with claim 1, wherein said oxygen ion beam is composed of O and/or O₂ ions.

3. A method in accordance with claim 1, wherein said ion beam is produced by an ion source provided with a differentially exhaustible evacuation means.

4. A method in accordance with claim 1, wherein said ion beam is produced by a cold cathode type ion source.

5. A method in accordance with claim 1, comprising the further step of flowing oxygen gas through the source of oxygen ions at a pressure ranging from 1.7 to 10^-5 to 8.3×

10^-3 Torr.

6. A method in accordance with claim 1, wherein said ion beam is produced by an ion source which is actuated at a discharge voltage ranging from 0.5 kV to 10 kV.

7. A method in accordance with claim 1, wherein said ion beam is accelerated under a acceleration potential ranging from 50 V to 40 kV.

8. A method in accordance with claim 1, wherein said substrate is heated to a temperature ranging from 230°

to 1,410°

C. during the deposition of evaporated particles thereon.

9. A method in accordance with claim 1, wherein the physical vapor deposition is carried out in an atmosphere containing oxygen gas having a partial pressure ranging from 1.0×

10^-8 to 1.0×

10^-2 Torr.

10. A method in accordance with claim 1, wherein said substrate is a monocrystal of MgO or SrTiO₃.

11. A method in accordance with claim 10, wherein the evaporated particles are deposited on a (001) plane of said monocrystal.

12. A method in accordance with claim 10, wherein the evaporated particles are deposited on a (110) plane of said monocrystal.

13. A method in accordance with claim 1, wherein said thin film obtained is composed of a compound copper oxide having a composition represented by the general formula:

space="preserve" listing-type="equation">(α

.sub.1-x β

.sub.x) [γ

]Cu.sub.y O.sub.z

in which α

stands for an element selected from group IIa of the periodic table, β

stands for an element selected from group IIIa of the periodic table, x is the atomic ratio of β

with respect to (α

+β

) and is 0.1≦

x≦

0.9 and y and z satisfy 0.4≦

y≦

3.0 and 1≦

z≦

5 respectively.

14. A method in accordance with claim 1, wherein said thin film obtained is composed of a compound oxide having a composition represented by the general formula:

space="preserve" listing-type="equation">LnBa.sub.2 Cu.sub.3 O.sub.7-x

in which Ln is at least one element selected from a group comprising Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb, and 0≦

x<

1.

15. A method in accordance with claim 1, wherein said thin film is a compound oxide represented by the general formula:

space="preserve" listing-type="equation">(La.sub.1-x M.sub.x).sub.2 CuO.sub.4

in which M stands for Ba or La, and 0<

x<

1.

16. A method in accordance with claim 1, wherein said thin film is a compound oxide represented by the general formula:

space="preserve" listing-type="equation">θ

.sub.4 (Φ

.sub.1-q,Ca.sub.q).sub.m Cu.sub.n O.sub.p+r

in which θ

stands for Bi or Tl, φ

stands for Sr when θ

is Bi and stands for Ba when θ

is Tl, 6≦

m≦

10 and 4≦

n≦

8, p=(6+m+n), 0<

q<

1, and -2≦

r≦

+2.

17. A method in accordance with claim 16, wherein said thin film obtained is a compound oxide having a composition:

space="preserve" listing-type="equation">Bi.sub.4 Sr.sub.4 Ca.sub.4 Cu.sub.6 O.sub.20+r

-2≦

r≦

+2.

18. A method in accordance with claim 16, wherein said thin film obtained is a compound oxide having a composition:

space="preserve" listing-type="equation">Tl.sub.4 Ba.sub.4 Ca.sub.4 Cu.sub.6 O.sub.20+r

-2≦

r≦

+2.

19. In a method for preparing a thin film of a compound copper oxide superconductor on a substrate by depositing particles evaporated from a vapor source composed of constituent elements of the compound copper oxide employing a physical vapor deposition technique, the improvement which comprises irradiating said substrate on which the evaporated particles are deposited with an oxygen ion beam the intensity of which is varied over time under an acceleration potential ranging from 50 V to 40 kV, while the evaporated particles are deposited on the substrate in an atmosphere containing oxygen gas having a partial pressure between 1.0×

10^-8 and 1.0×

10^-2 Torr, and in that said substrate is heated to a temperature between 230° and

1,410°

C. during the deposition of the evaporated particles thereon.