Method of fabricating back surface point contact solar cells
First Claim
1. A method of fabricating a back surface point contact solar cell, comprising the steps of(a) providing a substrate of silicon having two major opposing surfaces,(b) forming a silicon oxide layer on at least a first of said major surfaces,(c) forming a silicon nitride layer on said silicon oxide layer,(d) removing first portions of said layers thereby exposing first surface areas on said first major surface,(e) forming a first doped layer with a first conductivity type dopant therein on said surface areas,(f) removing second portions of said layers, thereby exposing second surface areas on said first major surface,(g) forming a second doped layer with a second conductivity type dopant therein over on said second surface areas,(h) heating said substrate and thereby diffusing dopant from said first layer into said first surface areas and diffusing dopant from said second doped layer into said second surface areas,(i) subjecting said substrate and said layers to an elevated temperature of at least 900°
- C. in a hydrogen atmosphere, thereby hydrogenating the interface between said major surface and said silicon oxide layer,(j) removing said first and second doped layers by a preferential etchant which does not remove said silicon nitride, and(k) forming a two-level metal interconnect structure for separately contacting said first surface areas and said second surface areas.
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Accused Products
Abstract
A back surface point contact silicon solar cell having improved characteristics is fabricated by hydrogenating a silicon-silicon oxide interface where hydrogen atoms are diffused through silicon nitride and silicon oxide passivating layers on the surface of a silicon substrate. In carrying out the hydrogenation, the substrate and passivation layers are placed in a hydrogen atomsphere at an elevated temperature of at least 900° C. whereby hydrogen atoms diffuse through the two passivation layers. Self-alignment techniques are employed in forming small-geometry doped regions in the surface of the silicon substrate for the p-n junctions of the solar cell. Openings are formed through the passivation layers to expose first surface areas on the substrate, and a doped silicon oxide layer is then formed over the passivation layers and on the exposed surface areas. Portions of the first doped layer on the two passivation layers are removed and then second portions of the two passivation layers are removed, thereby exposing second surface areas. A second doped silicon oxide layer is then formed over the passivation layers and on the second exposed surface areas. Dopants from the two doped silicon oxide layers are then diffused into the first and second surface layers to form p and n diffused regions in the surface of the substrate. Thereafter, the first and second doped silicon oxide layers are removed by a preferential etchant which does not remove the silicon nitride layer, thereby exposing the first and second surface areas. A two-level metal interconnect structure is then formed for separately contacting the first surface areas and the second surface areas.
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Citations
14 Claims
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1. A method of fabricating a back surface point contact solar cell, comprising the steps of
(a) providing a substrate of silicon having two major opposing surfaces, (b) forming a silicon oxide layer on at least a first of said major surfaces, (c) forming a silicon nitride layer on said silicon oxide layer, (d) removing first portions of said layers thereby exposing first surface areas on said first major surface, (e) forming a first doped layer with a first conductivity type dopant therein on said surface areas, (f) removing second portions of said layers, thereby exposing second surface areas on said first major surface, (g) forming a second doped layer with a second conductivity type dopant therein over on said second surface areas, (h) heating said substrate and thereby diffusing dopant from said first layer into said first surface areas and diffusing dopant from said second doped layer into said second surface areas, (i) subjecting said substrate and said layers to an elevated temperature of at least 900° - C. in a hydrogen atmosphere, thereby hydrogenating the interface between said major surface and said silicon oxide layer,
(j) removing said first and second doped layers by a preferential etchant which does not remove said silicon nitride, and (k) forming a two-level metal interconnect structure for separately contacting said first surface areas and said second surface areas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- C. in a hydrogen atmosphere, thereby hydrogenating the interface between said major surface and said silicon oxide layer,
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10. In the fabrication of a back surface point contact solar cell including a silicon substrate and employing silicon oxide and silicon nitride passivation layers, a method of reducing the recombination velocity of electron-holes pairs at the interface of the silicon substrate and the silicon oxide layer, comprising the steps of
placing the silicon substrate with silicon oxide and silicon nitride layers thereon in a hydrogen atmosphere, and heating said silicon substrate in said atmosphere at a temperature of at least 900° - C. to diffuse hydrogen atoms through said silicon nitride layer and through said silicon oxide layer to the interface of said silicon oxide layer and said substrate.
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11. A method of forming first and second diffused regions of opposite conductivity type in a surface of a silicon substrate for fabricating a back surface point contact solar cell, comprising the steps of
(a) providing a substrate of silicon having two major opposing surfaces, (b) forming a silicon oxide layer on a first of said major surfaces, (c) forming a silicon nitride layer on said silicon oxide layer, (d) removing first portions of said layers, thereby exposing first surface areas on said first major surface, (e) forming a first doped silicon oxide layer with a first conductivity type dopant therein over said layers and on said first surface areas, (f) removing second portions of said layers, thereby exposing second surface areas on said first major surface, (g) forming a second doped silicon oxide layer with a second conductivity type dopant therein over said layers and on said second surface areas, (h) heating said substrate and thereby diffusing dopant from said first doped layer into said first surface areas and diffusing dopant from said second doped layer into said second surface areas, and (i) removing said first and second doped layers by a preferential etchant which does not remove said silicon nitride.
Specification