High frequency switching device
First Claim
Patent Images
1. A high frequency switch comprising:
- at least two field-effect transistors, each including a control electrode and two other electrodes, connected to each other in series between a high frequency electric signal source and reference potential means for providing a reference potential, said two other electrodes of said at least two field effect transistors forming the series connection between said transistors;
first means for biasing the control electrode of each of said transistors to cause components of an electric signal which exceed a threshold frequency to flow from said electric signal source to said reference potential means through a channel between said two other electrodes of each of said transistors, said first means having an impedance which is high compared to the internal impedances of said transistors; and
second means connected between each junction of said series connection of said at least two transistors and said reference potential means for establishing an impedance between each junction of said series connection and said reference potential which is high compared to the internal impedances of said transistors.
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Abstract
A high frequency switch includes at least two transistors connected in series. By connecting the transistors in series the power handling capability can be increased by a factor of N2, where N is the number of transistors connected in series. The series is isolated by high impedance resistors and the transistors may be gallium arsenide field-effect transistors.
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Citations
10 Claims
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1. A high frequency switch comprising:
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at least two field-effect transistors, each including a control electrode and two other electrodes, connected to each other in series between a high frequency electric signal source and reference potential means for providing a reference potential, said two other electrodes of said at least two field effect transistors forming the series connection between said transistors; first means for biasing the control electrode of each of said transistors to cause components of an electric signal which exceed a threshold frequency to flow from said electric signal source to said reference potential means through a channel between said two other electrodes of each of said transistors, said first means having an impedance which is high compared to the internal impedances of said transistors; and second means connected between each junction of said series connection of said at least two transistors and said reference potential means for establishing an impedance between each junction of said series connection and said reference potential which is high compared to the internal impedances of said transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A high frequency switch comprising:
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at least two field-effect transistors, each including a control electrode and two other electrodes, connected to each other in series between a high frequency electric signal source and reference potential means for providing a reference potential, said two other electrodes of said at least two field effect transistors forming the series connection between said transistors; first means for biasing the control electrode of each of said transistors to cause components of an electric signal which exceed a threshold frequency to flow from said electric signal source to said reference potential means through a channel between said two other electrodes of each of said transistors, said first means including a bias voltage source and a plurality of resistors, each resistor connected in series between said bias voltage source and the control electrode of a respective one of said transistors, and wherein said first means have an impedance which is high compared to the internal impedances of said transistors; and second means connected between each junction of said series connection of said at least two transistors and said reference potential means for establishing an impedance between each junction of said series connection and said reference potential which is high compared to the internal impedances of said transistors.
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Specification