Solid state microanemometer with improved sensitivity and response time

• US 4,930,347 A
• Filed: 05/23/1989
• Issued: 06/05/1990
• Est. Priority Date: 05/23/1989
• Status: Expired due to Fees

• Current Assignee: University of Cincinnati
• Original Assignee: University of Cincinnati
• Inventors: Henderson, H. Thurman
• Primary Examiner(s): Goldstein, Herbert
• Application Number:
  US07/355,980
• Time in Patent Office: 378 Days
• Field of Search: 73/189, 73/204.23, 73/204.25, 73/204.26, 73/204.27, 156/633, 156/649, 156/651, 156/657, 156/662, 357/25, 357/28
• US Class Current: 73/170.12
• CPC Class Codes: G01F 1/6845 Micromachined devices

Abstract

A solid state microanemometer with improved sensitivity and response time is micromachined out of a single deep level doped semiconductor crystal and includes four corner supports interconnected to four spanning members which form the resistor legs of a Wheatstone bridge. The bottom of the supports are electrostatically bonded to a glass plate, thus thermally isolating the resistor legs a predetermined distance above the top surface of the plate and electrically isolating the supports. Electrically conductive material deposited on the four corner supports provides electrical contacts which enable a voltage to be applied across the resistor legs. Preferably, an n⁺ material is diffused into the region of the crystal located beneath the electrically conductive material, and the exposed surfaces of the crystal are sealed with a passivation layer.

Claims

1. A solid state microanemometer comprising:

a non-conductive base having a top surface;

four semiconductor supports located above said top surface; and

a Wheatstone bridge comprising four semiconductor resistor legs interconnected in a substantially common plane to four electrically conductive contacts located on top of said four supports, said common plane being at a predetermined distance above said top surface, thereby to substantially thermally isolate said resistors from said base and said supports.

2. The microanemometer of claim 1 wherein said four semiconductor supports are electrostatically bonded to said top surface.

3. The microanemometer of claim 1 wherein said base is of borosilicate glass.

8. The microanemometer of claim 1 wherein the distance between adjacent supports is less than 0.005 inches.

9. The microanemometer of claim 1 and further comprising:

an n⁺ region residing beneath each of the contacts.

10. The microanemometer of claim 9 wherein said n⁺ diffused regions comprise a phosphorus diffused semiconductor.

11. The microanemometer of claim 1 wherein said contacts are aluminum.

12. The microanemometer of claim 1 wherein each said resistor leg is located on a spanning member that bridges between adjacent supports, each spanning member further comprising:

a pair of parallel electrical conductors sandwiching said resistor leg, each conductor connected at one end only to one of said supports, the conductors being connected to different supports, thereby to cause applied voltage to each said resistor to be directed transverse to the orientation of said spanning member.

13. The microanemometer of claim 11 wherein said spanning member further comprises:

a diffused n⁺ region located beneath each of said conductors.

14. The microanemometer of claim 13 wherein said diffused n⁺ region is silicon diffused with phosphorus.

17. The microanemometer of claim 1 wherein said supports have a thickness of about 0.01" and said plane is located at least 0.009" above said top surface.

4. The microanemometer of claim wherein said resistor legs comprise a semiconductor material doped with a deep level impurity.

5. The microanemometer of claim 4 wherein said deep level impurity is gold.

6. The microanemometer of claim 4 wherein said supports are also doped with a deep level impurity, the legs and the supports being micromachined from a single semiconductor crystal.

7. The microanemometer of claim 6 wherein said crystal is silicon.

15. The microanemometer of claim 6 wherein an outer surface of said crystal is coated with a passivation layer.

16. The microanemometer of claim 15 wherein said crystal is silicon and said passivation layer is silicon dioxide.

18. A solid state microanemometer comprising:

a borosilicate base having a top surface;

a deep level doped semiconductor crystal having top and bottom etched surfaces, the etched surfaces defining four corner supports interconnected by four spanning members, the supports being electrostatically bonded to said top surface to place said spanning members a predetermined distance above said top surface;

four electrically conductive contacts located substantially on top of said corner supports for applying a voltage across each of said spanning members.

19. The solid state microanemometer of claim 18 and further comprising:

electrical leads ultrasonically bonded to said contacts.

20. The solid state microanemometer of claim 18 wherein said crystal is gold doped silicon.

21. The solid state microanemometer of claim 18 and further comprising:

an n⁺ region residing between said crystal and said conductive contacts.

22. The solid state microanemometer of claim 20 and further comprising:

a silicon dioxide boundary layer on the surface of said crystal.

23. The solid state microanemometer of claim 18 wherein the length of each said spanning member is less than 0.005 inch.

24. The solid state microanemometer of claim 18 wherein said crystal has an initial thickness of about 0.01" and said predetermined distance is at least 0.009".

25. A method of forming a solid state microanemometer out of a single crystal comprising the steps of:

etching a backside surface of said crystal to provide four supports;

bonding said supports to a base;

etching a frontside surface of said bonded crystal to provide four spanning members interconnecting said supports, said spanning members being located a predetermined distance above said base; and

depositing electrically conductive contact material on top of said supports.

26. The method of claim 25 wherein said crystal is anisotropically etched.

27. The method of claim 26 wherein said crystal is isotropically etched.

28. The method of claim 25 wherein said supports are electrostatically bonded to said base.

29. The method of claim 25 and further comprising the step of:

doping said crystal with a deep level impurity prior to said etching steps.

30. The method of claim 29 wherein said deep level doped crystal is gold doped silicon.

31. The method of claim 25 and further comprising the step of:

diffusing, prior to said depositing step, an n⁺ material into said crystal at regions where said electrically conductive material is to be deposited, thereby to provide ohmic contact between the subsequently deposited electrically conductive material and the crystal.

32. The method of claim 31 wherein said diffusing and said depositing steps produce, on each said spanning member, a parallel pair of electrically conductive members that sandwich a resistor leg, thereby to enable a voltage applied to each said resistor to be directed transverse to the orientation of said spanning member.

33. The method of claim 25 and further comprising the step of:

forming a passivation layer on the exposed surfaces of said crystal.

34. The method of claim 29 wherein said crystal is silicon and further comprising the step of:

forming a silicon dioxide layer on the exposed surface of said silicon crystal.

35. The method of claim 25 and further comprising the step of:

ultrasonically bonding electrical leads to said electrically conductive contacts above said supports.

36. A solid state microanemometer comprising:

a non-conductive base having a top surface;

four semiconductor supports located above said top surface; and

a Wheatstone bridge comprising four semiconductor resistor legs interconnected to four electrically conductive contacts located on top of said four supports, each of said supports being electrically isolated from the other said supports and said resistor legs.

37. The solid state microanemometer of claim 36 and further comprising:

a p⁺ region substantially electrically isolating each of said supports from two connected resistor legs.

38. The solid state microanemometer of claim 36 wherein one of said resistor legs is located a predetermined distance above said top surface.

39. The solid state microanemometer of claim 36 wherein said four supports and said four resistor legs further comprise:

a single semiconductor crystal doped with a deep level impurity.