×

Deposition of films onto large area substrates using modified reactive magnetron sputtering

  • US 4,931,158 A
  • Filed: 08/08/1989
  • Issued: 06/05/1990
  • Est. Priority Date: 03/22/1988
  • Status: Expired due to Fees
First Claim
Patent Images

1. An apparatus for depositing a thin film onto a substrate by reactive magnetron sputtering, said apparatus comprising:

  • a vacuum container which defines a vacuum chamber in which said substrate may be placed;

    a magnetron cathode adapted to mount a layer of target material for sputtering to form a primary sputtering plasma at said magnetron cathode;

    a layer of target material mounted on said magnetron cathode, said target material layer defining a surface area;

    means for directing the sputtered material formed by said primary sputtering plasma toward said substrate, said means for directing sputtered material comprising sidewalls surrounding said target material and extending upward from said magnetron cathode, said sidewalls defining a mini-chamber having an open top and open bottom;

    a grid covering the open top of said mini-chamber for controlling the flow of sputtered material toward said substrate, said grid being electrically grounded and extending fully between said sidewalls of said mini-chamber;

    inert gas means for introducing an inert gas into said mini-chamber;

    reactive gas means for introducing a reactive gas adjacent to said substrate; and

    means for creating an auxiliary plasma adjacent to said substrate comprising a direct current probe having a positive bias wherein the combination of the auxiliary plasma and grid provides for deposition of a thin film onto said substrate.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×