Deposition of films onto large area substrates using modified reactive magnetron sputtering

• US 4,931,158 A
• Filed: 08/08/1989
• Issued: 06/05/1990
• Est. Priority Date: 03/22/1988
• Status: Expired due to Fees

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Bunshah, Rointan F., Karim, Aziz A., Deshpandey, Chandra V.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/391,740
• Time in Patent Office: 301 Days
• Field of Search: 204/192.12, 204/192.14, 204/192.29, 204/298 TT
• US Class Current: 204/192.29
• CPC Class Codes: C23C 14/0068 characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
• CPC Class Codes: C23C 14/228 Gas flow assisted PVD deposition
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.

Claims

1. An apparatus for depositing a thin film onto a substrate by reactive magnetron sputtering, said apparatus comprising:

a vacuum container which defines a vacuum chamber in which said substrate may be placed;

a magnetron cathode adapted to mount a layer of target material for sputtering to form a primary sputtering plasma at said magnetron cathode;

a layer of target material mounted on said magnetron cathode, said target material layer defining a surface area;

means for directing the sputtered material formed by said primary sputtering plasma toward said substrate, said means for directing sputtered material comprising sidewalls surrounding said target material and extending upward from said magnetron cathode, said sidewalls defining a mini-chamber having an open top and open bottom;

a grid covering the open top of said mini-chamber for controlling the flow of sputtered material toward said substrate, said grid being electrically grounded and extending fully between said sidewalls of said mini-chamber;

inert gas means for introducing an inert gas into said mini-chamber;

reactive gas means for introducing a reactive gas adjacent to said substrate; and

means for creating an auxiliary plasma adjacent to said substrate comprising a direct current probe having a positive bias wherein the combination of the auxiliary plasma and grid provides for deposition of a thin film onto said substrate.

2. An apparatus according to claim 1 wherein said grid comprises a metal wire grid having a grid open area of between about 20 percent to 45 percent.

3. An apparatus according to claim 2 wherein said grid open area is about 33 percent.

4. An apparatus according to claim 2 wherein said wire grid comprises wires having a diameter of less than 0.02 inch.

5. An apparatus according to claim 2 wherein said wire grid is made from stainless steel.

6. An apparatus according to claim 1 wherein said grid is located about one inch above the target material.

7. A process for depositing a thin film onto a substrate by reactive magnetron sputtering comprising the steps of:

producing a primary plasma including material which is sputtered from a target material by magnetron sputtering said target material comprising a target material layer;

controlling the flow of said sputtered material toward said substrate by placing a grid between said substrate and primary plasma, said grid being electrically grounded, located adjacent to said primary plasma and extending fully over the area of said target material layer;

producing an auxiliary plasma including said sputtered material adjacent to said substrate, said auxiliary plasma being produced by a d.c. probe having a variable positive bias; and

introducing a reactive gas adjacent to said substrate for reaction with said sputtered material and deposition onto said substrate wherein a thin film is deposited onto said substrate over an area greater than the area of said target material layer.

8. A process according to claim 7 wherein said target material is selected from the group consisting of tin, indium, cadmium, zinc, aluminum, titanium and their alloys.

9. A process according to claim 8 wherein said reactive gas is selected from the group consisting of oxygen, nitrogen, halide gases including fluorine;

silanes;

germanes;

phosphine;

sulfur containing gases including hydrogen sulfide; and

hydrocarbon gases.

10. A process according to claim 9 wherein said target material is an indium tin alloy and said reactive gas is oxygen.

11. A process according to claim 7 wherein said grid has an open area of between about 20 percent to about 45 percent.

12. A process according to claim 7 wherein target poisoning is reduced by providing a mini-chamber surrounding said target material, said mini-chamber having said wire grid as the top thereof and by introducing an inert gas into said mini-chamber.

13. A process according to claim 7 wherein said grid is located about 1 inch above said target material.

14. A process according to claim 11 wherein said grid is made from stainless steel wire having a diameter of less than 0.02 inch.

15. A process according to claim 7 wherein said substrate is a plastic material.

16. A process according to claim 7 wherein said process is conducted at a temperature of below about 50°

C.