Silicon-based sensors

• US 4,934,190 A
• Filed: 02/16/1989
• Issued: 06/19/1990
• Est. Priority Date: 12/23/1987
• Status: Expired due to Term

• Current Assignee: Siemens-Bendix Automotive Electronics LP
• Original Assignee: Siemens-Bendix Automotive Electronics LP
• Inventors: Lee, Ki W.
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US07/311,568
• Time in Patent Office: 488 Days
• Field of Search: 73/DIG. 4, 73/204.11, 73/717-728, 73/753, 73/754, 73/755, 73/756, 73/204.25, 73/204.26, 29/593, 29/595, 29/610.1, 29/621.1, 338/4, 338/42, 338/22 SD
• US Class Current: 73/204.26
• CPC Class Codes: G01F 1/6845 Micromachined devices

Abstract

A silicon-based sensor includes a substrate, a sensor element, and a protective diaphragm mounting and covering the sensor element. The diaphragm is a silicon layer which, in a preferred embodiment, includes an etch-stop dopant. The etch-stop layer is sealed to the substrate so that the layer covers and mounts the sensor element to the substrate. The sensor is fabricated by forming a trough area in a surface of a silicon block (e.g., a silicon chip or wafer), treating the trough area with an etch-stop dopant (e.g., boron), depositing a sensor element onto the doped trough area, sealing at least the periphery of the doped trough area to a surface of a substrate (e.g., glass) so as to encapsulate the sensor element, and then etching away undoped regions of the silicon block so that the doped trough area remains as a protective diaphragm sealed to the substrate and covering the sensor element. It is also possible to form a bonding pad on untreated (e.g., undoped) discontinuous regions of an otherwise etch-stop treated trough layer so that when etched, the bonding pad is exposed to permit interconnection with electronic circuitry, yet the etch-stop treated layer remains so as to mount the bonding pad to the substrate.

Claims

1. A sensor of the type having a sensor element and a bonding pad for connecting said sensor element to electronic circuitry, said sensor comprising a substrate and a mounting rim defining a discontinuous area for mounting said bonding pad between said rim and said substrate and for permitting said bonding pad to be connected to electronic circuitry, said mounting rim consisting essentially of a silicon layer which has been formed as an etch-stop layer.

2. A sensor as in claim 1 wherein said substrate consists essentially of a material having thermal expansion properties similar to silicon.

3. A sensor as in claim 2, wherein said substrate consists essentially of glass.

4. A sensor as in claim 1, wherein said silicon layer includes boron as an etch-stop dopant.

5. A silicon-based sensor comprising:

a substrate, at least one sensor element,

at least one bonding pad operatively connected to said at least one sensor element and adapted for permitting electrical interconnection of the same to control circuitry, and

means for mounting said sensor element and said bonding pad to said substrate,

said mounting means including a silicon layer sealed to said substrate,

said silicon layer including one portion which continuously covers said at least one sensor element, and another portion which discontinuously covers said at least one bonding pad so that a region of the same is exposed to permit electrical interconnection to control circuitry,

said one and another portions being integral with one another and sealed to said substrate so as to mount said at least one sensor element and bonding pad thereto.

6. A silicon-based sensor as in claim 5, wherein said one portion of said silicon layer continuously covering said at least one sensor element is spaced from said substrate.

7. A silicon-based sensor as in claim 6, wherein said at least one sensor element is formed on said one portion of said silicon layer and is also space from said substrate.

8. A silicon-based sensor as in claim 5, wherein said another portion of said silicon layer discontinuously covering said at least one bonding pad continuously bounds the same so as to provide a mounting rim therefor.

9. A silicon-based sensor as in claim 5, wherein said substrate consists essentially of a material having thermal expansion properties similar to silicon.