Process for electrolessly plating copper and plating solution therefor

• US 4,935,267 A
• Filed: 05/06/1988
• Issued: 06/19/1990
• Est. Priority Date: 05/08/1987
• Status: Expired due to Fees

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Murakawa, Katuhiko, Kondo, Koji, Ishikawa, Junji, Nomoto, Kaoru, Ishida, Nobumasa, Ishikawa, Futoshi
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): Dang, Vi Duong
• Application Number:
  US07/190,854
• Time in Patent Office: 774 Days
• Field of Search: 427/443.1, 427/305, 427/98
• US Class Current: 427/97.3
• CPC Class Codes: C23C 18/40 using reducing agents
• CPC Class Codes: H05K 3/181 by electroless plating adhesives therefor H05K3/387

Abstract

By forming a first copper layer on a substrate by using a complexing agent for copper ion, which has a low copper complex stability constant, a uniform second layer can be stably formed by a second complexing agent for a copper ion, which has a high copper complex stability constant, even if the substrate is composed of a material having a low catalytic activity, such as tungsten, or even if the catalytic activity of the substrate is uneven. A similar effect can also be obtained by adding a small amount of a complexing agent for a copper ion, having a low stability constant, to an electroless copper plating bath containing a complexing agent for a copper ion, having a low stability constant. In this case, an effect of preventing stopping of the reaction of the complexing agent of a copper ion, having a high stability constant, is attained. Most preferably, after formation of a uniform first copper layer by an electroless copper plating solution containing a complexing agent for a copper ion, having a low stability constant, a second copper layer is formed by an electroless copper plating solution containing a complexing agent for a copper ion, having a high stability constant and also in this case, a small amount of a complexing agent for a copper ion, having a low stability constant, is added.

Claims

1. A process for electrolessly plating copper on a substrate, comprising the steps of i) immersing a substrate having a surface in a first electroless copper plating bath containing a copper ion, a first complexing agent for the copper ion, a reducing agent and a pH-adjusting agent to form a first copper film on the surface of the substrate;

and ii) immersing the substrate in a second electroless copper plating bath containing a copper ion, a second complexing agent for the copper ion, a reducing agent and a pH-adjusting agent to form a second copper film on the first copper film;

wherein the first complexing agent for the copper ion has a copper complex stability constant substantially lower than that of the second complexing agent for the copper ion.

2. A process according to claim 1, wherein the complexing agent for the copper ion is at least one member selected from the group consisting of ethylenediamine-tetraacetic acid, N,N,N'"'"',N'"'"'-tetrakis(2-hydroxypropyl)ethylenediamine, nitrilotriacetic acid and Rochelle salt.

3. A process according to claim 2, wherein the second complexing agent for the copper ion is a trialkanolamine.

4. A process according to claim 1, wherein the trialkanolamine is at least one member selected from the group consisting of triethanolamine and triisopropanolamine.

5. A process according to claim 1, wherein the first complexing agent for the copper ion is Rochelle salt and the second complexing agent for the copper ion is triethanolamine.

6. A process according to claim 1, wherein the first complexing agent for the copper ion is ethylene-diaminetetraacetic acid and the second complexing agent for the copper ion is triethanolamine.

7. A process according to claim 1, wherein the second electroless copper plating bath further contains a third complexing agent for the copper ion and the third complexing agent for the copper ion has a copper complex stability constant substantially lower than that of the second complexing agent for the copper ion.

8. A process according to claim 7, wherein the second complexing agent for the copper ion is present in an amount sufficient to substantially complex the copper ion in the second electroless copper plating bath and the third complexing agent for the copper ion is present in an amount of 1/100 to 1/2 equivalent to the copper ion in the second electroless copper plating bath.

9. A process according to claim 8, wherein the second complexing agent for the copper ion is a trialkanolamine and is present in an amount of at least 1.2 equivalents to the copper ion.

10. A process according to claim 9, wherein the second complexing agent for the copper ion is triethanolamine and is present in an amount of 1.3 to 20 equivalents to the copper ion.

11. A process according to claim 9, wherein the third complexing agent for the copper ion is at least one member selected from the group consisting of ethylenediamine-tetraacetic acid, N,N,N'"'"',N'"'"'-tetrakis(2-hydroxypropyl)ethylenediamine, nitrilotriacetic acid and Rochelle salt.

12. A process according to claim 1, wherein the substrate has a layer of palladium particles formed in advance on the surface thereof.

13. A process according to claim 1, wherein the substrate has a layer of a metal selected from the group consisting of a molybdenum and tungsten formed in advance on the surface thereof.

14. An electroless copper plating process, which comprises forming a copper plating film on the surface of a substrate by immersing the substrate in an electroless copper plating bath containing a copper ion, a complexing agent for the copper ion, a reducing agent and a pH-adjusting agent, wherein the complexing agent for the copper ion comprises a first complexing agent for the copper ion and a second complexing agent for the copper ion, the second complexing agent for the copper ion is present in an amount sufficient to substantially complex the copper ion present in the bath, the copper complex stability constant of the first complexing agent for the copper ion is substantially lower than that of the second complexing agent for the copper ion, and the first complexing agent for the copper ion is present in an amount of 1/100 to 1/2 equivalent to the copper ion.

15. A process according to claim 14, wherein the substrate has a layer of palladium particles formed in advance on the surface thereof.

16. A process according to claim 14, wherein the substate has a layer of a metal selected from the group consisting of molybdenum and tungsten formed in advance on the surface thereof.

17. A process according to claim 14, wherein the second complexing agent for the copper ion is a trialkanolamine and is present in an amount of at least 1.2 equivalents to the copper ion.