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Method of making a superlattice heterojunction bipolar device

  • US 4,937,204 A
  • Filed: 01/04/1989
  • Issued: 06/26/1990
  • Est. Priority Date: 03/15/1985
  • Status: Expired due to Term
First Claim
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1. A method of forming a superlattice device comprising the successive steps of:

  • (a) epitaxially growing on a semiinsulating substrate an N type GaAs collector layer of low resistivity;

    (b) epitaxially growing an N type, AlGaAs collector layer having a large band-gap;

    (c) epitaxially growing a P doped superlattice structure, constituting a base layer and forming a pn junction with the AlGaAs collector layer by forming n monolayers of a first compound semiconductor followed by m monolayers of a second compound semiconductor followed by n monolayers of the first compound semiconductor, and so on, ending with m monolayers of the second semiconductor, where n and m are less than eight;

    (d) epitaxially growing an N type AlGaAs emitter layer having a large band-gap and which forms an emitter junction of the heterojunction type with the superlattice base layer;

    (e) epitaxially growing an N type GaAs emitter layer;

    (f) epitaxially growing an N type GaAs emitter layer of low resistivity; and

    (g) causing electrons to flow perpendicularly through the monolayers.

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