Semiconductor device protection circuit

• US 4,937,697 A
• Filed: 05/22/1989
• Issued: 06/26/1990
• Est. Priority Date: 05/22/1989
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Edwards, Arthur J., Sievers, Kirk
• Primary Examiner(s): DEBOER, TODD
• Application Number:
  US07/355,228
• Time in Patent Office: 400 Days
• Field of Search: 361/18, 361/42, 361/79, 361/86, 361/89, 361/91, 361/103, 323/281, 323/276, 323/275, 323/279, 323/285, 323/284, 323/313, 323/315-317, 323/907
• US Class Current: 361/18
• CPC Class Codes: H02H 5/044 using a semiconductor device to sense the temperature
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 2017/0806 against excessive temperature
• CPC Class Codes: Y10S 323/901 Starting circuits

Abstract

Semiconductor device protection circuit (10) provides increased power dissipation (current) limits for FET (11) when lower FET temperatures exist. The FET drain to source voltage (V_DS) is monitored to provide a current sense signal (54). When the current sense signal exceeds a predetermined reference limit signal (V_REF,55), a control circuit (23, 32) reduces current (power dissipation) in the FET. Circuitry (24) provides the reference limit signal (V_REF) with a predetermined temperature variation as a function of the sensed temperature of the FET whereby for low device temperatures higher power dissipation (current) limits for the FET are provided. An additional control circuit (21, 30) provides short circuit overcurrent protection by reducing current in the FET when sensed FET current exceeds a predetermined limit. A delay circuit (39) inhibits operation of at least the control circuit (20, 32) until a predetermined time (t₁) after the FET is turned on.

Claims

1. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one control signal and, in response thereto, selectively passing current therethrough;

sense means coupled to said device for developing a power dissipation sense signal having a magnitude indicative of the power dissipated by said device when said device is on;

first control means for receiving said power dissipation sense signal and a first predetermined reference limit signal and modifying said control signal to reduce power dissipation in said device in response to the magnitude of said sense signal exceeding the magnitude of said reference limit signal by a predetermined amount; and

means for developing said predetermined reference limit signal such that said reference limit signal varies in accordance with a sensed temperature signal and has a magnitude varying in accordance with the temperature of said device, wherein the reference limit signal is varied so as to allow a higher maximum power dissipation by said device at lower device temperatures than at higher device temperatures before the control means modifies operation of said device.

2. A semiconductor device protection circuit according to claim 1 which includes additional control means coupled to said device for reducing current through said device in response to the magnitude of a current sense signal, indicative of the current in said semiconductor device when said device is on, exceeding the magnitude of a second predetermined reference limit signal, whereby said additional control means implements a short circuit protection function for said device while said first control means implements a power dissipation limit function for said device.

3. A semiconductor device protection circuit according to claim 2 wherein said power dissipation sense signal comprises a current sense signal having a magnitude indicative of the current passed through said device when said device is on.

4. A semiconductor device protection circuit according to claim 3 wherein said magnitude of said current sense signal is a function of the temperature of said semiconductor device.

5. A semiconductor device protection circuit according to claim 3 wherein said reference limit signal varies by at least 0.10 percent per degree centigrade of the temperature of said device.

6. A semiconductor device protection circuit according to claim 5 wherein said reference limit signal magnitude varies inversely as a function of the temperature of said semiconductor device.

7. A semiconductor device protection circuit according to claim 6 wherein said developing means includes at least one temperature sensing semiconductor device mounted adjacent to said semiconductor device receiving said control signal, said temperature sensing semiconductor device providing said sensed temperature signal.

8. A semiconductor device protection circuit according to claim 7 wherein said temperature sensing semiconductor device comprises at least one diode mounted on a semiconductor die which is separate from a semiconductor die which comprises the semiconductor device controlled by said first control means, both of said dies being mounted to a common heat sink.

9. A semiconductor device protection circuit according to claim 8 wherein said semiconductor device is a FET transistor.

10. A semiconductor device protection circuit according to claim 9 wherein said current sense signal is the voltage across drain and source electrodes of said FET multiplied by a predetermined gain factor.

11. A semiconductor device protection circuit according to claim 10 which includes delay means for delaying operation of said first control means for a first predetermined delay time after each turning on of said semiconductor device.

12. A semiconductor device protection circuit comprising:

semiconductor device for receiving at least one control signal and, in response thereto, selectively passing current therethrough;

sense means coupled to said device for developing a current sense signal having a magnitude indicative of the current passed through said device when said device is on;

first control means for receiving said current sense signal and a first predetermined reference limit signal and modifying said control signal to reduce current through said device in response to the magnitude of said sense signal exceeding the magnitude of said reference limit signal by a predetermined amount; and

means for developing said predetermined referenced limit signal such that said reference limit signal varies in accordance with a sensed temperature signal and has a magnitude varying in accordance with the temperature of said device, wherein the reference limit signal is varied so as to allow a higher maximum current through said device at lower device temperatures than at higher device temperatures before the control means modifies operation of said device.

13. A semiconductor device protection circuit according to claim 12 which includes additional control means coupled to said device for reducing current through said device in response to the magnitude of said current sense signal exceeding the magnitude of a second predetermined reference limit signal, said second reference signal magnitude being greater than said first reference signal magnitude, whereby said additional control means implements a short circuit protection function for said device while said first control means implements a power dissipation limit function for said device.

14. A semiconductor device protection circuit according to claim 12 wherein said control means includes means for turning said semiconductor device off at a first predetermined time after and in response to the occurrence of said current sense signal exceeding a limit reference signal and which includes means for turning said semiconductor device off at a second predetermined time after and in response to the occurrence of a transition is a signal which determines said control signal, said second time exceeding said first time, whereby turning said semiconductor device off for a sensed overcurrent condition occurs faster than the normal time for turning said semiconductor device off.