Piezoelectric micropump with microvalves

• US 4,938,742 A
• Filed: 02/04/1988
• Issued: 07/03/1990
• Est. Priority Date: 02/04/1988
• Status: Expired due to Term

• Current Assignee: Johannes G. Smits
• Original Assignee: Johannes G. Smits
• Inventors: Smits, Johannes G.
• Primary Examiner(s): HINDENBURG, MAX F
• Application Number:
  US07/152,379
• Time in Patent Office: 880 Days
• Field of Search: 604/9, 604/30-34, 604/65, 604/67, 222/215, 222/255, 222/262, 222/263, 222/372
• US Class Current: 604/67
• CPC Class Codes: A61M 2205/0244 Micromachined materials, e.g. made from silicon wafers, microelectromechanical systems [MEMS] or comprising nanotechnology
• CPC Class Codes: A61M 2205/0294 Piezoelectric materials
• CPC Class Codes: F04B 43/046 with piezoelectric drive

Abstract

A silicon micropump which can be manufactured by established integrated circuit techniques, and which is provided with piezoelectric valves, is described. The micropump can be used to pump liquids or gases at a very low rate, which can be accurately prescribed. The body of the pump and the valves are made in silicon and glass, while the valves contain piezoelectric material, which allows opening and closing of the valves by electrical means.

Claims

1. A pump for the displacement of a liquid, comprising:

a body of a silicon wafer, said wafer having a front side and a back side, said front side having an original front surface plane and said back side having an original back surface plane, while in said front side are shaped by a first means for removing from said front side a multiplicity of surface depressions in each of which at lest one rim of substantially circular shape extends from the bottom of said surface depression to said original front surface plane,

and in which are shaped by a second means for removing from said backside;

a multiplicity of troughs,

and in which are shaped by a third means for removing from said backside;

a pair of passage holes which extend from two of said troughs to said original front surface plane,

a multiplicity of passage holes which extend from said troughs to said surface depressions;

a front side glass plate with an upper and a lower surface in which a first hole for the admission of said liquid into the pump and a second hole for the removal of said liquid are made, said front side glass plate being hermetically connected with said lower surface by a joining means to said original front surface of said silicon wafer over the entire area of said original front surface, using an exclusion means to exclude said rim from being joined to said lower surface;

a backside plate which is hermetically connected to said original backside of said silicon wafer by said joining means, with the exclusion of said troughs and said passage holes;

a multiplicity of piezoelectric disks having a free surface and a joined surface, said joined surface being joined to said upper side of said front side glass plate, substantially such that said piezoelectric disks oppose said surface depressions;

a multiplicity of electrodes consisting of a first set located on said free surface of said piezoelectric disks, and a second set located on said joined surface;

a multiplicity of electric conductor connections to said sets of electrodes.

2. A pump as claimed in claim 1, in which said joining means for joining said lower surface of said front side glass plate to said original front surface of said silicon wafer is the anodic bonding method.

3. A pump as claimed in claim 1, in which said joining means for joining said back side glass plate to said original back side surface of said silicon wafer is the anodic bonding method.

4. A pump as claimed in claim 1 in which said exclusion means for the prevention of joining said rim to said lower surface of said front side glass plate consists of providing a film of Silicondioxide on the upper surface of said rim.

5. A pump as claimed in claim 1, in which said first means for removing used to shape said surface depressions in said front side of said wafer consists of one of the following methods:

isotropic etching,

anisotropic etching.

6. A pump as claimed in claim 1, in which said second means for removing said troughs consists of one of the following methods:

isotropic etching,

anisotropic etching,

while said third means for removing used to shape said passage holes is the anisotropic etching method.

7. A pump as claimed in claim 1, in which said multiplicity of electrodes consists of a first and a second pair of electrodes, said first pair being arranged in the form of two opposing disks and said second pair arranged in the form of two rings which are substantially concentric with said opposing disks, which allows the annular area of said piezoelectric disk located between said second pair of electrodes, to expand, while the area of said piezoelectric disk between said first pair of electrodes contracts.

8. A pump as claimed in claim 1, in which said surface depressions are shaped after the entire front surface of said wafer with the exclusion of said rim, has been removed to a depth of 3-5 micrometers, resulting in said rim having a height above said bottom of said surface depressions that is larger than the height of the front surface surrounding said surface depressions, which causes said front side glass plate to be permanently bent over said rim, after said front side glass plate has been joined to said front surface.

9. A pump as claimed in claim 1, in which said piezoelectric disks have a hole in their center, which reduces their bending stiffness.

10. A pump as claimed in claim 1, in which the surfaces of the pump contacting said pumped liquid, consist of Silicondioxide which has the property of being chemically inert.