Two-level lithographic mask for producing tapered depth

• US 4,938,841 A
• Filed: 10/31/1989
• Issued: 07/03/1990
• Est. Priority Date: 10/31/1989
• Status: Expired due to Term

• Current Assignee: Stanford University
• Original Assignee: Bell Communications Research, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Shahar, Arie, Tomlinson, Walter J. III
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/429,560
• Time in Patent Office: 245 Days
• Field of Search: 156/644, 156/651, 156/653, 156/655, 156/657, 156/659.1, 156/661.1, 156/662, 252/79.2, 252/79.3, 430/312, 430/313, 430/317, 427/43.1, 437/229, 437/234, 437/235, 372/50, 350/96.12
• US Class Current: 438/701
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3085 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: Y10S 438/978 forming tapered edges on substrate or adjacent layers

Abstract

A method of producing a sloped surface in a semiconductor material. In the area where the slope is desired a dynamic mask is applied to the surface of the semiconductor. A standard mask is applied over the dynamic mask and patterned so that its edge laterally defines the bottom of the desired slope. The sample is then immersed in an etchant that etches the dynamic mask faster than the semiconductor material. The standard mask is not appreciably etched. The dynamic mask is progressively etched laterally, thereby dynamically exposing more of the semiconductor material to etchant and producing a sloped surface therein.

Claims

1. A method of forming a sloping surface, comprising the steps of

depositing on a principle surface of a substrate material a first layer of a first material of a first composition;

depositing on an outer surface of said first layer a second layer of a second material of a second composition;

patterning said second layer so as to expose a portion of said first layer; and

applying an etching medium to said principle surface deposited with said first layer and with said patterned second layer for etching said substrate material and said first layer, said etching medium having a first etching rate for said substrate material and a second etching rate for said first material greater than said first etching rate, said etching medium etching said second material, if at all, at an etching rate less than said first etching rate.

2. A method as recited in claim 1, wherein said etching medium is a liquid mixture of a first etching liquid and a second etching liquid, said first etching liquid having a higher etching rate for said substrate material than for said first material, said second etching liquid having a higher etching rate for said first material than for said substrate material, said method further comprising the step of selecting a proportion of said first and second etching liquids in said mixture in accordance with a desired slope in said substrate material.

3. A method as recited in claim 1, further comprising patterning said first layer so as to form an aperture therethrough and wherein said step of depositing said second layer includes depositing said second material in said aperture.

4. A method as recited in claim 3, further comprising, after said step of patterning of said second layer and prior to said step of applying said etching medium, applying a second etching medium to said principle surface for a period of time sufficient to etch through a portion of said first layer so as to expose a portion of said second layer exposed at a sidewall of said aperture.

5. A method as recited in claim 1, wherein said first etching rate is an etching rate in a direction perpendicular to said principle surface and said second etching rate is an etching rate in a direction parallel to said principle surface.

6. A method of forming a sloping surface in a semiconductor material, comprising the steps of

depositing on a principle surface of the semiconductor material a first layer of a first material of a first composition;

depositing on an outer surface of said first layer a second layer of a second material of a second composition;

patterning said second layer so as to expose a portion of said first layer; and

applying an etching medium to said principle surface deposited with said first layer and with said patterned second layer for etching said semiconductor material and said first layer, said etching medium having a first etching rate for said semiconductor material and a second etching rate for said first material greater than said first etching rate, said etching medium etching said second material, if at all, at an etching rate less than said first etching rate.

7. A method as recited in claim 6, wherein said patterning step comprises etching an aperture through said second layer and exposing an outer surface of said first layer.

8. A method as recited in claim 6, wherein said second material comprises a photoresist and wherein said patterning step comprises exposing said photoresist to a pattern of radiant energy.

9. A method as recited in claim 8, wherein said first material comprises an inorganic material.

10. A method as recited in claim 9, wherein said inorganic material comprises silicon oxide and said etching medium comprises a mixture of buffered HF and an etching solution that etches said semiconductor material.

11. A method as recited in claim 6, wherein said etching medium is a liquid mixture of a first etching liquid and a second etching liquid, said first etching liquid having a higher etching rate for said semiconductor material than for said first material, said second etching liquid having a higher etching rate for said first material than for said semiconductor material, said method further comprising the step of selecting a proportion of said first and second etching liquids in said mixture in accordance with a desired slope in said semiconductor material.

12. A method as recited in claim 6, wherein said second etching rate is at least 22 times as great as said first etching rate.

13. A method as recited in claim 6, further comprising:

prior to said step of depositing said first layer, depositing on said principle surface of said semiconductor material a third layer of a third material;

patterning said third layer to define a rib therebeneath in said semiconductor material; and

etching portions of said semiconductor material exposed by said third layer to a first depth;

wherein said first layer is deposited over said third layer and said etched portions of said semiconductor material;

wherein said patterning of said second layer removes a portion of said second layer extending on partial lateral sides of said rib; and

wherein said step of applying an etching medium etches said semiconductor material to a second depth greater than said first depth.

14. A method as recited in claim 6, further comprising patterning said first layer so as to form an aperture therethrough and wherein said step of depositing said second layer includes depositing said second material in said aperture.

15. A method as recited in claim 14, further comprising, after said step of patterning of said second layer and prior to said step of applying said etching medium, applying a second etching medium to said principle surface for a period of time sufficient to etch through a portion of said first layer so as to expose a portion of said second layer exposed at a sidewall of said aperture.