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Semiconductor laser device

  • US 4,941,146 A
  • Filed: 06/28/1989
  • Issued: 07/10/1990
  • Est. Priority Date: 06/29/1988
  • Status: Expired due to Term
First Claim
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1. A semiconductor laser device, comprising:

  • a double heterostructure including an active layer and first and second inner cladding layers provided on both sides of said active layer, said double heterostructure being provided on a semiconductor substrate and a bandgap energy of said first and second inner cladding layers being greater than that of said active layer;

    first and second outer cladding layers provided on both sides of said double heterostructure; and

    first and second electrodes for applying a predetermined voltage across said double heterostructure;

    wherein a refractive index of said active layer is greater than a refractive index of said first and second outer cladding layers, and said refractive index of said first and second outer cladding layers is greater than a refractive index of said first and second inner cladding layers

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