Capacitor tantalum surface for use as a counterelectrode device and method

• US 4,942,500 A
• Filed: 12/12/1988
• Issued: 07/17/1990
• Est. Priority Date: 07/13/1988
• Status: Expired due to Term

• Current Assignee: Vishay Tansitor Electronics, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: Tansistor Electronics Incorporated
• Inventors: Green, Gilbert Jr., Lindskog, William J., Libby, Stuart E.
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US07/319,556
• Time in Patent Office: 582 Days
• Field of Search: 361/516, 361/525, 29/570.1
• US Class Current: 361/516
• CPC Class Codes: H01G 9/0425 specially adapted for cathode

Abstract

A counterelectrode and a method for providing the counterelectrode wherein an inherently high effective capacitance surface is formed on tantalum. The oxide forming ability of the tantalum surface is destroyed by removing existing oxide from the surface, depositing on the surface a layer of a platinum family metal, and alloying the deposited metal with the tantalum thereby forming an alloy layer. A second layer of metal, also selected from the platinum family, may then be deposited over the alloy layer. Alternately the platinum family metal may be sputtered or clad onto the surface of the tantalum with or without an alloying step. The second deposition produces a spongy layer and is accomplished by conventional electrolytic techniques.

Claims

1. In an electrolytic capacitor comprising a porous tantalum anode, a liquid electrolyte, and a metal container cathode, said cathode having an inherently high effective capacitance inner tantalum surface, the improvement comprising an alloy layer formed over the tantalum surface, said alloy layer comprising tantalum and a platinum family metal.

2. A method for providing an inherently high effective capacitance counterelectrode surface on tantalum for use in an electrolytic capacitor, comprising:

cladding a thin layer of a platinum family metal on the tantalum, thereby forming a platinum family member/tantalum alloy layer.

3. A method of claim 2 further comprising removing oxide from the tantalum prior to cladding.

4. A method of claim 3 in which the oxide is removed by treating the surface of the tantalum with an acid.

5. A method of claim 4 in which the acid is hydrofluoric acid.

6. A method of claim 2 in which the cladding is by cold welding under pressure.

7. A method of claim 6 further comprising the step of heat treating after cold welding to sinter the platinum family metal to the tantalum.

8. A method of claim 2 in which the cladding is by hot bonding under pressure.

9. A method of claim 2 in which the platinum family metal is selected from platinum or palladium.

10. A method of claim 2 further comprising the step of depositing over the platinum family member/tantalum alloy layer a layer of a platinum family member.

11. A counterelectrode for a tantalum electrolytic capacitor having an inherently high effective capacitance inner tantalum surface, comprising an alloy layer of a platinum family metal roll bonded to the tantalum surface.

12. A counterelectrode of claim 11 in which the platinum family metal is selected from platinum and palladium.