Etching method

• US 4,943,344 A
• Filed: 06/06/1989
• Issued: 07/24/1990
• Est. Priority Date: 10/29/1986
• Status: Expired due to Term

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Hitachi, Ltd.
• Inventors: Okudaira, Sadayuki, Tachi, Shinichi, Tsujimoto, Kazunori, Mukai, Kiichiro
• Primary Examiner(s): Lacey, David L.
• Assistant Examiner(s): Lithgow, Thomas M.
• Application Number:
  US07/362,099
• Time in Patent Office: 413 Days
• Field of Search: 156/643, 156/657, 156/659.1, 156/646, 156/662, 252/79.1, 430/297, 204/192.37
• US Class Current: 438/715
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20° C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.

Claims

1. An etching method for etching a single crystal silicon substrate, comprising:

providing an organic film as an etching mask on the silicon substrate, having at least one opening which exposes at least one portion of the silicon substrate,

etching at least one exposed portion with a plasma of an etching gas and forming at least one trench on the silicon substrate by continued etching of the at least one exposed portion, wherein the etching gas contains neither carbon nor silicon but is sulphur hexafloride (SF₆), and wherein etching is carried out while the silicon substrate is maintained at a temperature lower than -100°

C. so that the reaction probability between the fluorine which is contained in the plasma and the surface atoms of the silicon substrate is less than 1/10 of the reaction probability at 20°

C., thereby achieving a high selection ratio of etching speed of said silicon substrate to etching speed of said organic resist film.

2. An etching method according to claim 1, wherein said at least one trench has an opening having a width not larger than 1.0 μ

m.

3. An etching method according to claim 1, wherein a difference between a width of said trench and a width of said at least one opening is not larger than 0.1 μ

m.

4. An etching method for etching a silicon substrate, comprising:

etching at least one exposed portion of the silicon substrate by contacting the at least one exposed portion with a plasma of an etching gas and forming at least one trench on the silicon substrate by continued etching of the at least one exposed portion, wherein the etching gas contains neither carbon nor silicon but is a chlorine-containing gas, and wherein etching is carried out while the silicon substrate is maintained at a temperature lower than -40°

C. so that the reaction probability between the chlorine which is contained in the plasma and the surface atoms of the silicon substrate is less than 1/10 of the reaction probability at 20°

C.

5. An etching method according to claim 4, wherein the chlorine-containing gas is Cl₂.

6. An etching method for etching a silicon substrate, comprising:

etching at least one exposed portion of the silicon substrate by contacting the at least one exposed portion with a plasma of an etching gas and forming at least one trench on the silicon substrate by continued etching of the at least one exposed portion, wherein the etching gas contains neither carbon nor silicon but is a bromine-containing gas, and wherein etching is carried out while the silicon substrate is maintained at a temperature lower than -10°

C. so that the reaction probability between the bromine which is contained in the plasma and the surface atoms of the silicon substrate is less than 1/10 of the reaction probability at 20°

C.

7. An etching method according to claim 6, wherein the bromine-containing gas is Br₂.