Thin film semiconductor device and method of fabricating the same
First Claim
1. A thin film semiconductor device which includes a silicon layer formed on an insulating substrate and made of one of amorphous silicon and polycrystalline silicon, a gate electrode formed over the silicon layer through an insulating film and made of one of amorphous silicon and polycrystalline silicon, source and drain regions formed in the silicon layer so that the projection of the gate electrode onto the silicon layer is interposed between the source and drain regions, a channel region beneath the gate electrode and the insulating film, and source and drain electrodes kept in ohmic contact with the source and drain regions, respectively, wherein the thickness of the gate electrode is made less than or equal to 1,500 Å
- , whereby an active element for passivation can penetrate through the gate electrode into a surface layer of the entire channel region, which surface layer has a substantially uniform thickness, so that a passivated surface layer of the channel region, having a substantially uniform thickness for the entire channel region, can be achieved, and wherein the device further includes said passivated surface layer, having said active element for passivation therein so as to provide said passivated surface layer, having the substantially uniform thickness, for the entire channel region.
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Abstract
A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.
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Citations
11 Claims
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1. A thin film semiconductor device which includes a silicon layer formed on an insulating substrate and made of one of amorphous silicon and polycrystalline silicon, a gate electrode formed over the silicon layer through an insulating film and made of one of amorphous silicon and polycrystalline silicon, source and drain regions formed in the silicon layer so that the projection of the gate electrode onto the silicon layer is interposed between the source and drain regions, a channel region beneath the gate electrode and the insulating film, and source and drain electrodes kept in ohmic contact with the source and drain regions, respectively, wherein the thickness of the gate electrode is made less than or equal to 1,500 Å
- , whereby an active element for passivation can penetrate through the gate electrode into a surface layer of the entire channel region, which surface layer has a substantially uniform thickness, so that a passivated surface layer of the channel region, having a substantially uniform thickness for the entire channel region, can be achieved, and wherein the device further includes said passivated surface layer, having said active element for passivation therein so as to provide said passivated surface layer, having the substantially uniform thickness, for the entire channel region.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A thin film semiconductor device which includes a silicon layer formed on an insulating substrate and made of one of amorphous silicon and polycrystalline silicon, a gate electrode formed over the silicon layer through an insulating film and made of one of amorphous silicon and polycrystalline silicon, source and drain regions formed in the silicon layer so that the projection of the gate electrode onto the silicon layer is interposed between the source and drain regions, a channel region beneath the gate electrode and the insulating film, the length of the channel region beneath the gate electrode being greater than or equal to 10 μ
- m, and source and drain electrodes kept in ohmic contact with the source and drain regions, respectively, wherein the thickness of the gate electrode is made less than or equal to 1,500 Å
, whereby an active element for passivation can penetrate through the gate electrode into a surface layer of the entire channel region, which surface layer has a substantially uniform thickness, so that a passivated surface layer of the channel region, having a substantially uniform thickness for the entire channel region, can be achieved, and wherein the device further includes said passivated surface layer, having said active element for passivation therein so as to provide said passivated surface layer, having the substantially uniform thickness, for the entire channel region. - View Dependent Claims (11)
- m, and source and drain electrodes kept in ohmic contact with the source and drain regions, respectively, wherein the thickness of the gate electrode is made less than or equal to 1,500 Å
Specification