Surface emitting laser

• US 4,943,970 A
• Filed: 09/21/1989
• Issued: 07/24/1990
• Est. Priority Date: 10/24/1988
• Status: Expired due to Fees

• Current Assignee: Tacan Corporation (IPITEK, Inc.)
• Original Assignee: General Dynamics Corporation
• Inventors: Bradley, Eric M.
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/410,342
• Time in Patent Office: 306 Days
• Field of Search: 372/45, 372/43, 372/46, 372/96, 357/4, 357/17
• US Class Current: 372/45.01
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0683 by monitoring the optical output parameters
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18369 based on dielectric materials

Abstract

A laser fabricated from a substrate having top and bottom surfaces. A first stack of mirror layers of alternating different refractive indices are formed upon the substrate top surface. An active layer defining a mesa is formed on top of the first stack of mirror layers. A second stack of alternating different refractive indices mirror layers are formed upon the active layer mesa. A current confinement layer is formed about the side of the active laser mesa. A first contact is formed upon the substrate bottom surface while a second contact is formed upon a portion of said active layer remote from the active layer mesa.

Claims

1. A surface emitting laser diode comprising:

a semiconductor substrate having top and bottom surfaces;

a first plurality of alternating semiconductor mirror layers of differing refractive indicies formed upon said substrate;

a semiconductor active layer formed upon said first plurality of semiconductor layers, said active layer having a central region and a surrounding outer region, said active layer central region being of greater thickness than said active layer outer region, wherein said active layer central region has a top and a side surface and said active layer outer region has a top surface intersecting said active layer central region side;

a second plurality of said alternating semiconductor mirror layers formed upon said active central region top surface;

a current confinement layer formed upon said active layer central region side surface and a portion of said active layer outer region top surface immediate said active layer central region side surface;

first and second contacts respectively formed upon said substrate bottom surface and said active layer outer region top surface remote from said active layer central region side surface.

2. The surface emitting laser of claim 1 wherein said active layer is formed of an n-type semiconductor material having a p-type region formed therein at said active layer central region side surface and said active layer outer region.

3. The surface emitting laser of claim 1 wherein said current confinement layer is formed of dielectric material.

4. The surface emitting laser of claim 2 wherein said current confinement layer is formed of a dielectric material.

5. The surface emitting laser of claim 1 wherein said current confinement layer comprises a p-type semiconductor material layer formed upon said active layer and an n-type semiconductor material layer formed upon said p-type semiconductor layer.

6. The surface emitting laser of claim 2 wherein said current confinement layer comprises a p-type semiconductor material layer formed upon said active layer and an n-type semiconductor material layer formed upon said p-type semiconductor layer.

7. A surface emitting laser comprising:

a substrate having top and bottom surfaces;

a first stack of mirror layers located upon said substrate top surface, said first stack layers of alternating indices of refraction;

an active layer located upon said first stack, said active layer having a mesa extending above an adjacent base layer portion of said active layer;

a second stack of mirror layers located upon a top surface of said mesa, said second stack layers of alternating indices of refraction;

a current confinement layer located about said mesa and upon said adjacent base layer portion immediate said mesa;

a first contact located upon said substrate bottom surface; and

a second contact located upon said active layer adjacent to said base layer portion.

8. The surface emitting laser of claim 7 wherein said substrate is formed of a semiconductor material.

9. The surface emitting laser of claim 7 wherein said first and second stack of mirror layers are formed of semiconductor materials.

10. The surface emitting laser of claim 7 wherein said active layer is formed of a semiconductor material.

11. The surface emitting laser of claim 7 wherein current confinement layer is formed of a dielectric material.

12. The surface emitting laser of claim 7 wherein said current confinement layer is comprised of a first layer of p-type semiconductor material having a second layer of n-type semiconductor material formed upon said first layer.

13. The surface emitting laser of claim 7 wherein said first and second contacts are respective layers of metalization with said second contact circumscribing said mesa and adjacent base layer portion immediately adjacent said mesa.

14. The surface emitting laser of claim 8 wherein said active layer is formed of an n-type semiconductor material, said active layer having a p-type region formed in said active layer surrounding and extending outwardly from a central portion of said mesa.