Photosensitive device and image detector including such a device, especially two-energy image detector

• US 4,945,242 A
• Filed: 02/22/1989
• Issued: 07/31/1990
• Est. Priority Date: 02/26/1988
• Status: Expired due to Term

• Current Assignee: Thomson-CSF (Thales SA)
• Original Assignee: Thomson-CSF (Thales SA)
• Inventors: Arques, Marc, Berger, Jean-Luc
• Primary Examiner(s): Howell, Janice A.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US07/314,435
• Time in Patent Office: 524 Days
• Field of Search: 250/367, 250/370.08, 250/370.04, 250/370.11, 250/578, 357/32, 357/30, 358/213.11
• US Class Current: 250/367
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 5/3205 using subtraction imaging techniques
• CPC Class Codes: H05G 1/60 Circuit arrangements for obtaining a series of X-ray photographs or for X-ray cinematography

Abstract

The invention relates to a photosensitive matrix (2) permitting the simultaneous acquisition of two images, especially radiological images, and which offers at the same time a maximum sensitivity and a maximum image resolution. The matrix (2) of the invention includes photosensitive points (P1 to P9) disposed in lines and in columns. According to a feature of the invention, each photosensitive point (P1 to 9) includes two photosensitive cells (JA, JB), the first ends (3A, 3B) of which are connected to a same line conductor (L1 to L3), and the second ends (4A, 4B) of which are connected to different column conductors. FIG. 1.

Claims

1. An image detector comprising a photosensitive device including a matrix of photosensitive points (P1 to P9), the photosensitive points (P1 to P9) being connected to line conductors (L1 to L3) and to column conductors (FA1 to FA3, FB1 to FB3), wherein each photosensitive point (P1 to P9) includes a first and a second photosensitive cell (JA, JB) each capable of storing an information item, the two photosensitive cells (JA, JB) being superposed;

and a first and a second scintillator substance (27,

     58) which are sensitive to different energies of an incident radiation and emitting visible or non-visible light in response to the incident radiation.

2. The image detector as claimed in claim 1, wherein the column conductors (FA1 to FA3, FB1 to FB3) are divided into two arrays (FA, FB), and wherein the first and the second photosensitive cells (JA, JB) of a same photosensitive point (P1 to P9) are connected by their first end (3A, 3B) to a same line conductor (L1 to L3) and are connected by their second end (4A, 4B) to a column conductor (FA1 to FA3, FB1 to FB3) of a different column array (FA, FB).

3. The image detector as claimed in claim 2, wherein each photosensitive cell (JA, JB) consists of a photosensitive element (DA, DB) in series with a capacitor (CA, CB).

4. The image detector as claimed in claim 3, wherein the photosensitive elements (DA, DB) are photodiodes.

5. The image detector as claimed in claim 3, wherein the photosensitive elements (DA, DB) are NIPIN-type or PINIP-type phototransistors.

6. The image detector as claimed in claim 2, wherein the line conductors (LA1 to LA3) are connected to an addressing device (8), and wherein, on the one hand, the column conductors (FA1 to FA3) of the first column array (FA) are connected to a first reading and multiplexing device (9A), and wherein, on the other hand, the column conductors (FB1 to FB3) of the second column array (FB) are connected to a second reading and multiplexing device (9B).

7. The image detector as claimed in claim 2, wherein the line conductors (L1 to L3) are connected to a reading and multiplexing device (74), and wherein the first and the second arrays (FA, FB) of column conductors (FA1 to FA3, FB1 to FB3) are each connected to an addressing device (8A, 8B).

8. The image detector as claimed in claim 2, wherein the first and second photosensitive cells (JA, JB) are carried by a substrate (26) and are each formed from a stack of semiconductor layers (30, 31, 32 and 40, 41, 42) and from an insulating layer (34, 55), all these layers being superposed on one another between two conductive layers (28, 58), one of which is engraved to constitute the column conductors (FB1 to FB3) of the second column array (FB) and the other of which is engraved to constitute the column conductors (FA1 to FA3) of the first column array (FA), and wherein the two stacks or cells (JA, JB) are separated by an intermediate conductive layer (51) with which the line conductors (L1 to L3) are constructed.

9. The image detector as claimed in claim 8, wherein the intermediate conductive layer (51) is transparent to light.

10. The image detector as claimed in claim 9, wherein the photosensitive elements (DA, DB) have substantially equal thicknesses (E1, E2).

11. The image detector as claimed in claim 9 or 10, which further includes a light source (60) permitting the performance of a general reset to level of the voltages at the terminals of the photosensitive elements (DA, DB).

12. The image detector as claimed in claim 8, wherein the intermediate conductive layer (51) is opaque to light.

13. The image detector as claimed in claim 1, wherein the two scintillator substances (27, 58) constitute a first and a second scintillator layer (SA, SB), between which the photosensitive device (1) is situated, in such a manner as to construct a sandwich structure.

14. The image detector as claimed in claim 13, wherein the photosensitive device (1) includes a substrate (26), the substrate (26) carrying photosensitive cells superposed by twos (JA, JB), the second scintillator layer (SB) being deposited on the substrate (26) and intercalated between the latter and the photosensitive cells (JA, JB).

15. The image detector as claimed in claim 14, which includes at least one light source (60) serving to perform a voltage reset to level of the photosensitive cells (JA, JB).

16. The image detector as claimed in claim 15, wherein the light source (60) emits a light having a greater wavelength than the light emitted by the scintillator layers (SA, SB).

17. The image detector as claimed in any one of claims 1 to 16, wherein the incident radiation is an X-ay radiation.

18. An image detector including a first and a second scintillator substance (27, 58) which are sensitive to different energies of an incident radiation and emitting visible or non-visible light in response to the incident radiation, which detector further includes a photosensitive device (1), said photosensitive device including a matrix of photosensitive points (P1 to P9), the photosensitive points (P1 to P9) being connected to line conductors (L1 to L3) and to column conductors (FA1 to FA3, FA1 to FB3), wherein each photosensitive point (P1 to P9) includes a first and a second photosensitive cell (JA, JB) each capable of storing an information item, the two photosensitive cells (JA, JB) being superposed.