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Liquid crystal display device and method of manufacturing the same

  • US 4,948,231 A
  • Filed: 01/18/1989
  • Issued: 08/14/1990
  • Est. Priority Date: 04/09/1984
  • Status: Expired due to Fees
First Claim
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1. A liquid crystal display device comprising first and second transparent substrates closely spaced apart and facing each other, a liquid crystal sealed between said transparent substrates, a plurality of display electrodes made of ITO arranged in rows and columns on the inner surface of said first transparent substrate, thin film transistors formed on said first transparent substrate and each having a drain connected to one of said display electrodes, first source buses formed of the same material as said display electrodes and extending along corresponding columns of said display electrodes, each said source bus having source electrodes of said thin film transistors integrally formed therewith adjacent corresponding ones of said display electrodes, an opaque metal layer formed on said first transparent substrate and under each said thin film transistor, an insulating layer formed between each said metal layer and said thin film transistor, second source buses of the same material as said opaque metal layers formed integrally therewith to extend under said insulating layer along respective ones of said first source buses and connected thereto through holes formed in said insulating layer, and a transparent common electrode formed on and substantially over the entire inner surface of said second transparent substrate, said thin film transistors being selectively controlled for switching to apply a voltage between selected display electrodes and said common electrode for display,said thin film transistors each including a semiconductor layer which extends between the corresponding display electrode and the source electrode, opposite marginal edges of said semiconductor layer partly overlying said display electrode and said source electrode on the side thereof opposite said first transparent substrate, a gate insulating film formed on said semiconductor layer entirely on the side thereof opposite said first transparent substrate, and a gate electrode formed on said gate insulating film,each of said thin film transistors including a pair of gaps which are defined respectively between the opposite ends of said gate electrode and said display electrode and the source electrode when viewed in a direction perpendicular to said first transparent substrate, the width of each of said gaps being less than the thickness of said semiconductor layer, portions of said semiconductor layer overlying said display electrode and source electrode being ohmic layers having implanted ions of a concentration higher than an impurity concentration of a channel region of said semiconductor layer under said gate electrode, said channel region having the same length as the width of said gate electrode.

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