Surface-emitting semiconductor laser and manufacturing method of same

• US 4,949,351 A
• Filed: 04/12/1989
• Issued: 08/14/1990
• Est. Priority Date: 04/15/1988
• Status: Expired due to Fees

• Current Assignee: Omron Tateisi Electronics Co. (Omron Corporation)
• Original Assignee: Omron Tateisi Electronics Co. (Omron Corporation)
• Inventors: Imanaka, Koichi
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/337,095
• Time in Patent Office: 489 Days
• Field of Search: 372/43-46, 11/99, 357/4, 357/17
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/18347 Mesa comprising active layer
• CPC Class Codes: H01S 5/18375 based on metal reflectors

Abstract

A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper reflection mirrors is configured in a columnar shape and that an insulating material is buried in a periphery of the double heterojunction. The non-alloyed metal of TiPtAu serves three functions of an ohmic metal, a reflective layer, and an etching mask.

Claims

1. A surface-emitting semiconductor laser comprising:

a first electrode;

an n-type semiconductor substrate disposed on said first electrode;

a lower reflection mirror including a semiconductor multilayer supported on said substrate;

an upper reflection mirror formed of TiPtAu, said upper reflection mirror comprising a second electrode;

a double heterojunction disposed between said lower reflection mirror and said upper reflection mirror, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second clad layer; and

an insulating material disposed around a periphery of said double heterojunction so as to surround said double heterojunction, whereby said laser emits light in an upward direction away from a side of said first clad layer directed away from said first electrode.

2. A semiconductor laser according to claim 1 wherein said insulating material has a refractive index smaller than a refractive index of said double heterojunction.

3. A method of manufacturing a surface-emitting semiconductor laser comprising the steps of:

providing a first electrode;

providing an n-type substrate disposed on said first electrode;

forming a lower reflection mirror including a semiconductor multilayer on said n-type substrate;

fabricating an upper reflection mirror formed of TiPtAu, said upper reflection mirror also constituting a second electrode;

forming a double heterojunction between said lower and upper reflection mirrors in a columnar shape, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second layer; and

providing an insulating material around a periphery of said double heterojunction to bury said double heterojunction in said insulating material.