Capacitive pressure sensor with third encircling plate

• US 4,951,174 A
• Filed: 12/30/1988
• Issued: 08/21/1990
• Est. Priority Date: 12/30/1988
• Status: Expired due to Term

• Current Assignee: VTI Holding Oy (Murata Manufacturing Co Limited)
• Original Assignee: United Technologies Corporation (Rtx Corporation)
• Inventors: Latina, Mario S., Grantham, Daniel H.
• Primary Examiner(s): Griffin, Donald A.
• Application Number:
  US07/292,276
• Time in Patent Office: 599 Days
• Field of Search: 357/26, 29/25.42, 73/718, 73/724, 361/283
• US Class Current: 361/283.4
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A pressure sensor (210) utilizing capacitance variations to sense pressure variations of the silicon-glass-silicon type (FIG. 3) including a conductive silicon substrate (212), a conductive silicon diaphragm (211) and a glass dielectric layer (213) therebetween forming a spacing wall (216) between them, in which dielectric drift and parasitic (non-pressure sensitive) capacitance is minimized by including a very thin, third, symmetrical, silicon, capacitive plate (220) in the glass wall (216). The third conductive plate encircles the central region (Cc) of the sensor and is located outside of it. Improved assembly techniques, including all symmetrical planar layers, for higher manufacturing yield and better long term reliability are also disclosed.

Claims

1. A capacitive pressure sensor of the conductive dielectric-conductive type, comprising:

a conductive substrate forming a first capacitive plate;

a conductive flexible, elastic diaphragm having an exterior side, said diaphragm being capable of flexing movement due to changes in pressure on its exterior side and forming a second capacitive plate; and

a non-conductive, dielectric layer between said conductive substrate and said conductive diaphragm, said layer providing peripheral wall spacer(s) extending between and joining said conductive substrate and said conductive diaphragm;

an evacuated chamber being formed between said substrate and said diaphragm and being closed off by spacer wall(s) formed by said dielectric layer between said substrate and said diaphragm;

the flexing movement of said diaphragm due to the changes in pressure on its exterior side causing the capacitance of the sensor to vary;

said chamber being at least generally cylindrical in its outer configuration defining a central region; and

a third, conductive plate located in said wall(s) spaced and separated from both said conductive substrate and said conductive diaphragm by said dielectric layer and forming a third capacitive plate, said third conductive plate encircling said central region but being located substantially outside of said central region.

2. The capacitive pressure sensor of claim 1, wherein all of said plates are made of the same material.

3. The capacitive pressure sensor of claim 1, wherein said third plate is made of silicon.

4. The capacitive pressure sensor of claim 1, wherein the sensor is basically cylindrical in shape in its central region, and wherein said third plate forms an annulus which is symmetrical about the longitudinal, center line axis of the sensor.

5. The capacitive pressure sensor of claim 4, wherein said third plate has a washer-like configuration.

6. The capacitive pressure sensor of claim 1, wherein said third plate is relatively thin in comparison to said first and second plates, having a thickness of about one micrometers.

7. The capacitive pressure sensor of claim 1, wherein all three of said plates is made of doped, conductive silicon.

8. The capacitive pressure sensor of claim 7, wherein said dielectric layer is made of glass.

9. The capacitive pressure of claim 1, wherein all of said plates are made of conductive silicon and said dielectric layer is made of glass, said third layer being relatively thin of about a micron in thickness.

10. A method of minimizing the parasitic capacitance of a capacitive pressure sensor, which sensor includes--

a conductive substrate;

a conductive diaphragm having an exterior side, said diaphragm being capable of flexing movement due to changes in pressure on its exterior side; and

a non-conductive, dielectric layer between said conductive substrate and said conductive diaphragm, said layer providing peripheral spacer wall(s) extending between and joining said substrate and said diaphragm;

an evacuated chamber being formed between said substrate and said diaphragm and being closed off by said peripheral spacer wall(s) formed by said dielectric layer between said substrate and said diaphragm;

the flexing movement of said diaphragm due to the changes in pressure on its exterior side causing the capacitance of the sensor to vary;

comprising the following step(s);

providing a third, conductive plate in said spacer wall(s) spaced and separated from both said conductive substrate and said conductive diaphragm by said dielectric layer, with said third conductive plate encircling said central region but being located substantially outside of said central region.

11. The method of claim 10, wherein there is included the following step(s):

forming said three plates out of the same material.

12. The method of claim 10, wherein there is included the following step(s):

forming said three plates out of conductive silicon.

13. The method of claim 12, wherein there is further included the following step(s):

forming said third plate by depositing first a dielectric glass layer, then a thin conductive silicon layer of about one micrometer in thickness on top of the first dielectric glass layer, and then a second dielectric glass layer, covering over said thin silicon layer, and using said dielectric layers as said spacer wall(s).

14. The method of claim 13, wherein there is further included the following step(s):

producing planar layers in depositing the two dielectric layers and said thin silicon layer.