Production of a transparent electric conductor

• US 4,952,423 A
• Filed: 01/27/1988
• Issued: 08/28/1990
• Est. Priority Date: 01/27/1987
• Status: Expired due to Fees

• Current Assignee: Saint-Gobain Research
• Original Assignee: Saint-Gobain Recherche
• Inventors: Hirata, Masahiro, Misonou, Masao, Kawahara, Hideo
• Primary Examiner(s): BELL, JANYCE A
• Application Number:
  US07/148,827
• Time in Patent Office: 944 Days
• Field of Search: 427/108-110, 427/255, 427/126.3, 427/294, 427/165-169, 427/377, 427/255.2
• US Class Current: 427/109
• CPC Class Codes: C03C 17/23 Oxides C03C17/02 takes precedence
• CPC Class Codes: C03C 2217/211 SnO2
• CPC Class Codes: C03C 2218/152 by cvd
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The invention relates to the production of transparent electric conductors.

According to the invention, a doped tin oxide layer formed by CVD is heat-treated to improve its conductivity.

Claims

1. A method for manufacturing a transparent, electrically conductive member, by forming an electrically conductive layer on a transparent substrate, comprising the steps of:

heating the substrate to a first deposition temperature;

thermally decomposing and oxidizing a tin compound in the vicinity of the substrate under conditions such that a tin oxide layer is deposited on the substrate;

bringing a halogen containing doping material into the vicinity of the substrate during the deposition step, whereby said tin oxide layer is doped as it is deposited; and

without thereafter raising the temperature of the deposited doped layer above the deposition temperature, performing a heat treatment on the doped tin oxide layer at a temperature between 250°

C. to 400°

C.

2. The method of claim 1, wherein the heat treatment is performed at atmospheric or reduced pressure.

3. The method of claim 1, wherein the heat treatment is performed under an H₂, N₂, or H₂ and N₂ atmosphere.

4. The method of claim 1, wherein the layer is deposited by pyrolysis from liquid, gas or solid precursor materials.

5. The method of claim 1, wherein the layer is deposited by chemical vapor deposition.

6. The process of claim 1 wherein said halogen with which the layer is doped is fluorine.

7. The process of claim 1, wherein said doped tin oxide layer is formed by exposing said heated substrate to a mixed vapor consisting of a halogen-containing doping material and the constituents of the desired tin oxide compound.

8. The method of claim 1, wherein the transparent substrate is comprised of glass.

9. The method of claim 1, wherein the heat treatment is performed at a temperature between about 250°

C. and 350°

C.