Semiconductor device manufacture including trench formation

• US 4,952,524 A
• Filed: 05/05/1989
• Issued: 08/28/1990
• Est. Priority Date: 05/05/1989
• Status: Expired due to Term

• Current Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Lee, Kuo-Hua, Lu, Chih-Yuan
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US07/347,975
• Time in Patent Office: 480 Days
• Field of Search: 437/67, 437/240, 437/982, 148/DIG. 133
• US Class Current: 438/437
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Claims