Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material
First Claim
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1. A method for the fabrication of at least one layer of monocrystalline semiconducting material on a first layer of an insulating material made on a monocrystalline semiconducting substrate, said method comprising the following steps:
- (a) A first step for making said first layer of insulating material on the monocrystalline semiconducting substrate, said first layer of insulating material having a chemical attack selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase.(b) A second step for the etching of first apertures in the first layer of insulating material;
(c) A third step for making a layer of a semiconducting material in the first apertures and on the parts of the insulating layer that remain after the previous etching step, said layer of semiconducting material being monocrystalline in the apertures and polycrystalline on the insulator;
(d) A fourth step for the making of a second layer of an insulating material on the layer of semiconducting material;
(e) A fifth step of etching, in the second layer of insulating material, of at least one second aperture ending on a polycrystalline part of the layer of semiconducting material;
(f) A sixth step for the chemical attacking of the polycrystalline semiconducting material so as to eliminate all the polycrystalline semiconducting material and, possibly, so as to slightly attack the monocrystalline material;
(g) A seventh step for the selective growth, from a vapor phase of a monocrystalline semiconductor material in the space or spaces left free by the disappearance of the polycrystalline material.
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Abstract
A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.
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Citations
21 Claims
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1. A method for the fabrication of at least one layer of monocrystalline semiconducting material on a first layer of an insulating material made on a monocrystalline semiconducting substrate, said method comprising the following steps:
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(a) A first step for making said first layer of insulating material on the monocrystalline semiconducting substrate, said first layer of insulating material having a chemical attack selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase. (b) A second step for the etching of first apertures in the first layer of insulating material; (c) A third step for making a layer of a semiconducting material in the first apertures and on the parts of the insulating layer that remain after the previous etching step, said layer of semiconducting material being monocrystalline in the apertures and polycrystalline on the insulator; (d) A fourth step for the making of a second layer of an insulating material on the layer of semiconducting material; (e) A fifth step of etching, in the second layer of insulating material, of at least one second aperture ending on a polycrystalline part of the layer of semiconducting material; (f) A sixth step for the chemical attacking of the polycrystalline semiconducting material so as to eliminate all the polycrystalline semiconducting material and, possibly, so as to slightly attack the monocrystalline material; (g) A seventh step for the selective growth, from a vapor phase of a monocrystalline semiconductor material in the space or spaces left free by the disappearance of the polycrystalline material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation or deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps:
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a first step for the making of mesas of a determined height in a monocrystalline, semiconducting substrate; a second step for the deposition on the substrate, between the mesas, of a dielectric material, the thickness of which is smaller than the height of the mesas; a third step for the deposition, on the dielectric material, of an interposed material having a chemical attacking selectivity with respect to the dielectric material and to the layer of upper material which shall be deposited subsequently, the thickness of which is such that its addition to the thickness of the dielectric material enables the height of the mesas to be equalled; a fourth step for the deposition, on all the mesas and on the entire interposed material, of a layer of an encapsulating material having chemical attacking selectivity with respect to the organic material and permitting neither nucleation nor deposition from the species of said vapor phase on the exposed surfaces of said encapsulating material; a fifth step for the making of apertures in the layer of encapsulating material in zones ending on interposed material; a sixth step for the removal, through the apertures, of the interposed material; a seventh step for the selective growth in vapor phase, through the apertures, of a monocrystalline, semiconducting material of the same nature as the substrate. - View Dependent Claims (14, 19, 20, 21)
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15. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation nor deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps:
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a first step for the making, on a monocrystalline, semiconducting substrate of at least one band formed by a layer of a dielectrical material, a layer of a semiconducting, interposed material and a layer of an insulating, encapsulating material having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surfaces exposed to the vapor phase; a second step for the growth, on the substrate, in the zone not occupied by said band, of a monocrystalline semiconducting material; a third step for the oxidation of this monocrystalline semiconducting material; a fourth step for the making of apertures in the encapsulating layer, having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to said vapor phase; a fifth step for the elimination, through said apertures, of the layer of semiconducting, interposed material; a sixth step for the selective growth, through said apertures, of a monocrystalline, semiconducting material. - View Dependent Claims (16, 17)
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18. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation nor deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps;
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a first step for the making, on a substrate, of at least one band of a dielectrical material; a second step for the coating of these bands with a semiconducting, interposed material, having chemical attacking selectivity with respect to the other materials; a third step for the coating of the unit thus obtained with an encapsulating material having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase; a fourth step for the making of apertures in the encapsulating layer and above the band of dielectric material; a fifth step for the removal, through the apertures of a layer of semiconducting, interposed material; a sixth step for the selective growth and epitaxy through the apertures of a monocrystalline, semiconducting material; a seventh step of oxidation of the monocrystalline semiconducting material in the apertures to provide a substantially planar monocrystalline semiconducting layer; a eighth step where the encapsulating material and the oxidized monocrystalline semiconducting material in the apertures are removed.
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Specification