Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material

• US 4,952,526 A
• Filed: 04/04/1989
• Issued: 08/28/1990
• Est. Priority Date: 04/05/1988
• Status: Expired due to Term

• Current Assignee: Remote Access LLC (Intellectual Ventures LLC)
• Original Assignee: Thomson-CSF
• Inventors: Karapiperis, Leonidas, Garry, Guy, Pribat, Didier, Collet, Christian
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): HOLTZMAN, LAURA
• Application Number:
  US07/333,083
• Time in Patent Office: 511 Days
• Field of Search: 437/89, 437/915, 437/90, 148/DIG. 164
• US Class Current: 438/412
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02549 Antimonides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/76248 using lateral overgrowth techniques, i.e. ELO techniques
• CPC Class Codes: Y10S 148/164 Three dimensional processing

Abstract

A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.

Claims

1. A method for the fabrication of at least one layer of monocrystalline semiconducting material on a first layer of an insulating material made on a monocrystalline semiconducting substrate, said method comprising the following steps:

(a) A first step for making said first layer of insulating material on the monocrystalline semiconducting substrate, said first layer of insulating material having a chemical attack selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase.

(b) A second step for the etching of first apertures in the first layer of insulating material;

(c) A third step for making a layer of a semiconducting material in the first apertures and on the parts of the insulating layer that remain after the previous etching step, said layer of semiconducting material being monocrystalline in the apertures and polycrystalline on the insulator;

(d) A fourth step for the making of a second layer of an insulating material on the layer of semiconducting material;

(e) A fifth step of etching, in the second layer of insulating material, of at least one second aperture ending on a polycrystalline part of the layer of semiconducting material;

(f) A sixth step for the chemical attacking of the polycrystalline semiconducting material so as to eliminate all the polycrystalline semiconducting material and, possibly, so as to slightly attack the monocrystalline material;

(g) A seventh step for the selective growth, from a vapor phase of a monocrystalline semiconductor material in the space or spaces left free by the disappearance of the polycrystalline material.

2. A method according to claim 1 comprising:

an eighth step of localized etching or oxidation of the monocrystalline, semiconducting material located in the second aperture or apertures located in the second layer of insulating material, having a chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surfaces exposed to the vapor phase.

a ninth step of withdrawal of the layer of insulating material and of the oxidated, monocrystalline semiconducting material.

3. A method according to claim 2, comprising:

a tenth step of localized oxidation of the monocrystalline, semiconducting material in zones corresponding to the first apertures.

4. A method according to claim 3, comprising:

an eleventh step for the attacking of the semiconducting material oxidated during the tenth step.

5. A method according to claim 1, wherein the seventh step for the growth of monocrystalline, semiconducting material is stopped when this material reaches the flanks of the second apertures, said method comprising the following stages after the seventh step:

a first stage for the attack and removal of the insulator of the second layer of insulating material;

a second stage for the deposition of an interposed material having chemical attacking selectivity with respect to the first layer of insulating material and to a third layer of insulator which will be deposited subsequently, in the apertures existing in the layer of monocrystalline material, and a planarization of the structure obtained;

a third stage for the deposition of a third layer of insulator;

a fourth stage for the etching of third apertures in the third layer of insulator above the interposed material;

a fifth stage for the removal of the interposed material through the third apertures;

a sixth stage for the selective growth and epitaxy of monocrystalline, semiconducting material through the third apertures.

6. A method according to claim 1, wherein said apertures are made in the form of bands.

7. A method according to claim 1, wherein each step or stage of attack or removal is followed by a cleaning step.

8. A method according to claim 1, wherein the substrate is silicon, gallium arsenide (GaAs), indium phosphide (InP), a III-V compound or a II-VI compound and wherein the semiconducting material is of the same nature.

9. A method according to claim 8, wherein the insulator is silica (SiO₂) or silicon nitride (Si₃ N₄).

10. A method according to claim 1, wherein the seventh step is achieved so that there is an overrunning of the semiconducting material above the insulating material and wherein this seventh step is followed by a stage for the mechanical/chemical polishing of the semiconducting material until the surface of the insulating material is reached, the polishing being then stopped automatically by selectivity of the chemical reagent used.

11. A method according to claim 1 wherein the apertures made during the third step are oriented so that the facet of lateral growth made during the seventh step is not restricted.

12. A method according to claim 2, comprising a tenth step of localized etching of the monocrystalline, semiconducting material in zones substantially corresponding to the first apertures.

13. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation or deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps:

a first step for the making of mesas of a determined height in a monocrystalline, semiconducting substrate;

a second step for the deposition on the substrate, between the mesas, of a dielectric material, the thickness of which is smaller than the height of the mesas;

a third step for the deposition, on the dielectric material, of an interposed material having a chemical attacking selectivity with respect to the dielectric material and to the layer of upper material which shall be deposited subsequently, the thickness of which is such that its addition to the thickness of the dielectric material enables the height of the mesas to be equalled;

a fourth step for the deposition, on all the mesas and on the entire interposed material, of a layer of an encapsulating material having chemical attacking selectivity with respect to the organic material and permitting neither nucleation nor deposition from the species of said vapor phase on the exposed surfaces of said encapsulating material;

a fifth step for the making of apertures in the layer of encapsulating material in zones ending on interposed material;

a sixth step for the removal, through the apertures, of the interposed material;

a seventh step for the selective growth in vapor phase, through the apertures, of a monocrystalline, semiconducting material of the same nature as the substrate.

14. A method according to claim 13, wherein the substrate is made of silicon, gallium arsenide (GaAs), indium phosphide (InP), or a III-V compound or a II-VI compound.

19. A method according to claim 13, wherein the interposed material is organic.

20. A method according to claim 19, wherein the interposed material is a polyimide or a polymer.

21. A method according to claim 13, wherein the interposed material is mineral.

15. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation nor deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps:

a first step for the making, on a monocrystalline, semiconducting substrate of at least one band formed by a layer of a dielectrical material, a layer of a semiconducting, interposed material and a layer of an insulating, encapsulating material having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surfaces exposed to the vapor phase;

a second step for the growth, on the substrate, in the zone not occupied by said band, of a monocrystalline semiconducting material;

a third step for the oxidation of this monocrystalline semiconducting material;

a fourth step for the making of apertures in the encapsulating layer, having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to said vapor phase;

a fifth step for the elimination, through said apertures, of the layer of semiconducting, interposed material;

a sixth step for the selective growth, through said apertures, of a monocrystalline, semiconducting material.

16. A method according to claim 15, wherein the first step provides for the making, on the substrate, of a band having only one layer of a dielectric material and one layer of a semiconducting, interposed material and wherein the third step provides for the deposition of an encapsulating layer having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase on the entire structure;

17. A method according to claim 16, wherein the second step provides for a preliminary step for the etching of the layer of semiconducting interposed material.

18. A method for the fabrication, by growth, through chemical vapor deposition, of at least one monocrystalline thin layer of a semiconducting material, wherein the crystal growth is initiated on a seed of a monocrystalline material of the same type as the semiconducting material of the thin layer to be obtained, and is confined between two layers made of a material distinct from the semiconducting material in such a way that, in the conditions of deposition used, there can occur neither nucleation nor deposition of semiconducting material on the exposed surfaces of this distinct material or these distinct materials, the interval between the two layers of the distinct material or materials defining the thickness of the monocrystalline thin layer to be obtained, comprising the following steps;

a first step for the making, on a substrate, of at least one band of a dielectrical material;

a second step for the coating of these bands with a semiconducting, interposed material, having chemical attacking selectivity with respect to the other materials;

a third step for the coating of the unit thus obtained with an encapsulating material having chemical attacking selectivity with respect to the adjacent layers and permitting neither nucleation nor deposition from the species of said vapor phase on its surface exposed to the vapor phase;

a fourth step for the making of apertures in the encapsulating layer and above the band of dielectric material;

a fifth step for the removal, through the apertures of a layer of semiconducting, interposed material;

a sixth step for the selective growth and epitaxy through the apertures of a monocrystalline, semiconducting material;

a seventh step of oxidation of the monocrystalline semiconducting material in the apertures to provide a substantially planar monocrystalline semiconducting layer;

a eighth step where the encapsulating material and the oxidized monocrystalline semiconducting material in the apertures are removed.