×

Vertical field-effect transistor having a high breakdown voltage and a small on-resistance

  • US 4,952,991 A
  • Filed: 08/23/1989
  • Issued: 08/28/1990
  • Est. Priority Date: 08/25/1988
  • Status: Expired due to Term
First Claim
Patent Images

1. A field effect transistor comprising:

  • a first semiconductor region formed on a main surface of a semiconductor substrate of one conductivity type except for a predetermined portion of said semiconductor substrate, said first semiconductor region being of the other conductivity type;

    a second semiconductor region formed on said main surface of said semiconductor substrate uncovered by said first semiconductor region, said second semiconductor region having said one conductivity type with an impurity concentration higher than said semiconductor substrate;

    a third semiconductor region of the other conductivity type formed in said second semiconductor region;

    a fourth semiconductor region formed on a surface of said first semiconductor region, said fourth semiconductor region being separated from said second semiconductor region and said fourth semiconductor region being of said one conductivity type;

    a gate electrode formed on said first semiconductor region between said second semiconductor region and said fourth semiconductor region;

    an insulating film provided on said second semiconductor region and on said third semiconductor region;

    a first electrode electrically connected to the fourth semiconductor region; and

    a second electrode electrically connected to the other main surface of said semiconductor substrate.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×