Precious metal doped crystals for hardening of the crystals
First Claim
1. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, and mixtures thereof, where said crystalline structure is doped by a precious metal selected from the group consisting of copper, silver, gold and mixtures thereof, in an amount of about 25 ppm by weight up to about 3 ppm by weight.
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Accused Products
Abstract
Disclosed is a crystal 1 of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphoride, indium arsenide, or mixtures thereof, doped with a precious metal in an amount of about 25 ppm up to the solubility limit of a precious metal in the crystal. The crystal is useful in nonlinear optical devices, acousto-optical devices, piezoelectric devices, and other types of optical and acoustic devices.
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Citations
25 Claims
- 1. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, and mixtures thereof, where said crystalline structure is doped by a precious metal selected from the group consisting of copper, silver, gold and mixtures thereof, in an amount of about 25 ppm by weight up to about 3 ppm by weight.
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14. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vinadium sulfide, thallium phosphorous selenide, lead halide, cedmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphide, indium arsenide, and mixtures thereof, where said crystalline structure is doped by a precious metal in an amount of about 25 ppm by weight up to the solubility limit of said precious metal in the crystalline structure, and wherein sending and receiving transducers are mounted on one surface of said crystalline structure.
- 15. Single crystal consisting of thallium arsenic selenide doped with silver in an amount from about 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide.
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18. A single crystal, in the form of a rod, consisting of thallium arsenic selenide doped with silver in an amount from amount 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide, where the rod has opposed optically polished faces, with a transducer mounted to the side of said rod.
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19. A single crystal consisting of thallium arsenic selenide doped with silver in an amount from about 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide, having a sending transducer and a receiving transducer mounted to the side of said crystal.
- 20. A single crystal consisting of thallium arsenic selenide doped with gold in an amount from about 25 ppm to about the solubility limit of gold in crystalline thallium arsenide selenide.
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24. A single crystal consisting of thallium arsenic selenide doped with copper in an amount from about 25 ppm to about the solubility limit of copper in crystalline thallium arsenide selenide, having a sending transducer and a receiving transducer mounted to the side of said crystal.
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25. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphide, indium arsenide, and mixtures thereof, where said crystalline structure is doped by a precious metal selected from the group consisting of copper, silver, gold, and mixtures thereof, in an amount of about 25 ppm by weight up to about 300 ppm by weight, to provide a hardened material.
Specification