Precious metal doped crystals for hardening of the crystals

• US 4,955,699 A
• Filed: 11/23/1988
• Issued: 09/11/1990
• Est. Priority Date: 10/28/1987
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Westinghouse Electric Corporation (Paramount Global (f/k/a ViacomCBS Inc.))
• Inventors: Gottlieb, Milton S., Singh, Narsingh B., Hopkins, Richard H., Henningsen, Tom, Mazelsky, Robert
• Primary Examiner(s): Laroche, Eugene R.
• Assistant Examiner(s): Shingleton, Michael B.
• Application Number:
  US07/276,093
• Time in Patent Office: 657 Days
• Field of Search: 350/358, 350/353, 350/355, 252/584, 300/353, 300/355, 300/358
• US Class Current: 359/285
• CPC Class Codes: C30B 11/00 Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00
• CPC Class Codes: C30B 29/46 Sulfur-, selenium- or tellurium-containing compounds
• CPC Class Codes: G02F 1/0018 Electro-optical materials

Abstract

Disclosed is a crystal 1 of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphoride, indium arsenide, or mixtures thereof, doped with a precious metal in an amount of about 25 ppm up to the solubility limit of a precious metal in the crystal. The crystal is useful in nonlinear optical devices, acousto-optical devices, piezoelectric devices, and other types of optical and acoustic devices.

Claims

1. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, and mixtures thereof, where said crystalline structure is doped by a precious metal selected from the group consisting of copper, silver, gold and mixtures thereof, in an amount of about 25 ppm by weight up to about 3 ppm by weight.

2. A crystalline structure according to claim 1 which is multicrystalline.

3. A single crystal according to claim 1.

4. A crystalline structure according to claim 1 wherein the amount of said precious metal is about 50 to about 300 ppm, and is selected from the group consisting of silver, gold, and mixtures thereof, to provide a hardened material.

5. A crystalline structure according to claim 1 wherein said precious metal is silver.

6. A crystalline structure according to claim 1 wherein said precious metal is gold.

7. A crystalline structure according to claim 1 wherein said crystalline structure is lead halide and the halide in said lead halide is selected from the group consisting of chlorine, bromine, and iodine.

8. A crystalline structure according to claim 1 wherein said crystal is thallium arsenic selenide.

9. A crystalline structure according to claim 1 wherein said crystal is thallium arsenic sulfide.

10. A crystalline structure according to claim 1 wherein said crystal is thallium vanadium sulfide.

11. A crystalline structure according to claim 1 wherein said crystal is thallium phosphorous selenide.

12. A crystalline structure according to claim 1 having polished opposing optical faces.

13. A crystalline structure according to claim 12 wherein said faces are coated with an antireflective coating.

14. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vinadium sulfide, thallium phosphorous selenide, lead halide, cedmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphide, indium arsenide, and mixtures thereof, where said crystalline structure is doped by a precious metal in an amount of about 25 ppm by weight up to the solubility limit of said precious metal in the crystalline structure, and wherein sending and receiving transducers are mounted on one surface of said crystalline structure.

15. Single crystal consisting of thallium arsenic selenide doped with silver in an amount from about 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide.

16. A crystal according to claim 15 when the amount of said silver is about 50 to about 300 ppm.

17. A crystal according to claim 15 in the form of a rod having opposing optically polished faces.

18. A single crystal, in the form of a rod, consisting of thallium arsenic selenide doped with silver in an amount from amount 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide, where the rod has opposed optically polished faces, with a transducer mounted to the side of said rod.

19. A single crystal consisting of thallium arsenic selenide doped with silver in an amount from about 25 ppm to about the solubility limit of silver in crystalline thallium arsenide selenide, having a sending transducer and a receiving transducer mounted to the side of said crystal.

20. A single crystal consisting of thallium arsenic selenide doped with gold in an amount from about 25 ppm to about the solubility limit of gold in crystalline thallium arsenide selenide.

21. A crystal according to claim 20 when the amount of gold is about 50 to about 300 ppm.

22. A crystal according to claim 20 in the form of a rod having opposing optically polished faces.

23. A crystal according to claim 22 having a transducer mounted to the side of said rod.

24. A single crystal consisting of thallium arsenic selenide doped with copper in an amount from about 25 ppm to about the solubility limit of copper in crystalline thallium arsenide selenide, having a sending transducer and a receiving transducer mounted to the side of said crystal.

25. A crystalline structure selected from the group consisting of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphide, indium arsenide, and mixtures thereof, where said crystalline structure is doped by a precious metal selected from the group consisting of copper, silver, gold, and mixtures thereof, in an amount of about 25 ppm by weight up to about 300 ppm by weight, to provide a hardened material.