Electrical measurements of properties of semiconductor devices during their manufacturing process

• US 4,956,611 A
• Filed: 04/26/1989
• Issued: 09/11/1990
• Est. Priority Date: 04/26/1989
• Status: Expired due to Fees

• Current Assignee: Ron Maltiel
• Original Assignee: Ron Maltiel
• Inventors: Maltiel, Ron
• Primary Examiner(s): Eisenzopf, Reinhard J.
• Assistant Examiner(s): Harvey, Jack B.
• Application Number:
  US07/343,755
• Time in Patent Office: 503 Days
• Field of Search: 324/158 R, 324/158 P, 324/73 PC, 324/65 R, 324/65 P, 324/71.1, 324/551, 324/554, 324/557, 324/537, 324/514, 324/671, 324/690, 324/699, 324/716, 324/719, 437/8
• US Class Current: 324/699
• CPC Class Codes: G01B 7/14 for measuring distance or clearance between spaced objects or spaced apertures G01B7/30 takes precedence

Abstract

A method for measuring the width of structures in a semiconductor wafer comprises the step of constructing test structures on the wafer shaped to function as moats for confining electrically conductive liquid. The moats have an elongated shape. By measuring the electrical resistance exhibited by the liquid within the moat, the dimensions of the moat and, thus, the other structures on the wafer can be measured.

Claims

1. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat;

introducing an electrically conductive liquid into said moat so that said liquid is confined by said structure; and

measuring the electrical resistance exhibited by said liquid between a first location within said moat and a second location within said moat, said second location being laterally displaced relative to said first location.

2. Method of claim 1 further comprising the step of calculating the width of lines formed on the surface of said substrate from said measured electrical resistance.

3. Method of claim 1 further comprising the step of calculating the distance between lines formed on the surface of said substrate from said measured electrical resistance.

4. Method of claim 1 wherein said substrate is a semiconductor wafer and said structure comprises photoresist.

5. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat;

introducing an electrically conductive liquid into said moat; and

measuring the electrical resistance exhibited by said liquid, wherein said structure is electrically conductive, said method further comprising the step of covering said structure with a non-conductive liquid prior to depositing said conductive liquid, so that said structure does not electrically contact said conductive liquid.

6. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat;

introducing an electrically conductive liquid into said moat; and

measuring the electrical resistance exhibited by said liquid, wherein said structure is electrically conductive, and wherein said step of introducing comprises the step of applying a mixture of said conductive liquid and a non-conductive liquid to said structure and allowing said non-conductive liquid to settle so that said non-conductive liquid prevents said electrically conductive liquid from electrically contacting said structure.

7. Method for electrically contacting a structure in an integrated circuit, said structure including an opening, said method comprising the steps of:

introducing an electrically conductive liquid into said opening, said electrically conductive liquid electrically contacting the side of said structure; and

introducing an electrical probe into said conductive liquid to thereby permit electrical contact to said structure via said conductive liquid.

8. Method of claim 7 wherein the top surface of said structure is covered by nonconductive material.

9. Method for testing electrical characteristics of a dielectric layer in an integrated circuit comprising the steps of:

introducing an electrically conductive liquid on top of said dielectric layer, wherein said dielectric layer extends over electrically conductive material;

applying a signal to said conductive liquid; and

measuring the capacitance between said conductive liquid and said conductive material.

10. Method of claim 9 further comprising the steps of:

removing said conductive liquid; and

applying a solid conductive layer over said dielectric layer, thereby forming a capacitor.

11. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat;

introducing an electrically conductive liquid into said moat;

introducing a plurality of probes into said conductive liquid; and

measuring the electrical resistance exhibited by said liquid between at least a first one of said probes within said plurality and a second one of said probes within said plurality.

12. Method of claim 11 wherein said substrate is a semiconductor wafer.

13. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat;

introducing an electrically conductive liquid into said moat; and

measuring the electrical resistance exhibited by said liquid, wherein at least a portion of the top surface of said substrate underneath said conductive liquid is electrically conductive, said method further comprising the step of covering said portion of said top surface with a non-conductive liquid prior to depositing said conductive liquid, so that said portion of said top surface does not electrically contact said conductive liquid.

14. A method comprising the steps of:

constructing a structure on a substrate, said structure serving as the walls of a moat wherein at least a portion of the top surface of said substrate is electrically conductive;

introducing a mixture of an electrically conductive liquid and a non-conductive liquid into said moat;

allowing said non-conductive liquid to settle so that said non-conductive liquid prevents said electrically conductive liquid from electrically contacting said portion of said top surface; and

measuring the electrical resistance exhibited by said electrically conductive liquid.