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Optoelectronic integrated circuit

  • US 4,956,682 A
  • Filed: 02/10/1988
  • Issued: 09/11/1990
  • Est. Priority Date: 04/28/1987
  • Status: Expired due to Fees
First Claim
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1. An optoelectronic integrated circuit comprising:

  • a laser device including a first cladding layer of a first type of conductivity formed on a semi-insulating substrate, an active layer formed on said first cladding layer of said first type of conductivity, a waveguide layer of a second type of conductivity formed on said active layer being wider in band gap than said active layer, and a second cladding layer of said second type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer; and

    a heterojunction bipolar transistor including an emitter layer of said first type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer, a collector formed by a portion of said first cladding layer of said first type of conductivity and a base formed by a portion of said waveguide layer of said second type of conductivity.

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