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Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %

  • US 4,959,106 A
  • Filed: 08/28/1989
  • Issued: 09/25/1990
  • Est. Priority Date: 07/21/1987
  • Status: Expired due to Term
First Claim
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1. A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer with an n-type semiconductor layer, characterized in that one of said semiconductor layers is a film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, said film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms, and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume, and the other of said semiconductor layers is film represented by the general formula ZnA, where A denotes an oxygen atom, sulfur atom, or selenium atom, or any one of the general formulas ZnTe, ZnSe1-y Tey (where 0<

  • y<

    1), and CdTe.

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