High power MOSFET with low on-resistance and high breakdown voltage

• US 4,959,699 A
• Filed: 06/22/1989
• Issued: 09/25/1990
• Est. Priority Date: 10/13/1978
• Status: Expired due to Term

• Current Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Lidow, Alexander, Herman, Thomas
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Abraham, Fetsum
• Application Number:
  US07/371,678
• Time in Patent Office: 460 Days
• Field of Search: 357/23.7, 357/23.8, 357/23.4, 357/41, 357/43, 357/86
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402

Abstract

A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.

Claims

1. A high power metal oxide silicon field effect transistor device exhibiting relatively low on-resistance and relatively high breakdown voltage;

said device comprising;

a wafer of semiconductor material having first and second opposing semiconductor surfaces;

said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;

at least first and second spaced base regions of the opposite conductivity type to said one conductivity type formed in said wafer and extending from said first semiconductor surface to a first depth beneath said first semiconductor surface;

the space between said at least first and second base regions defining a common conduction region of one conductivity type at a given first semiconductor surface location;

first and second source regions of said one conductivity type formed in each pair of said at least first and second base regions respectively at first and second first surface location to a depth less than said first depth;

the outer rim of each of said first and second source regions being laterally spaced along said first semiconductor surface from the lateral outer periphery of its said base region to define first and second channel regions along said first semiconductor surface between each pair of said first and second source regions, respectively, and said common conduction region;

source electrode means connected to said source regions;

gate insulation layer means on said first surface, disposed at least on said first and second channel regions;

gate electrode means on said gate insulation layer means and overlying said first and second channel regions;

a drain conductive region remote from said common region and separated therefrom by said relatively lightly doped major body portion;

a drain electrode coupled to said drain conductive region; and

at least said first base region being a cellular polygonal region;

said cellular polygonal region being surrounded by said common conduction region;

said first source region having the shape of an annular ring disposed within said cellular polygonal first base region.

2. The device of claim 1 wherein said common conduction region is relatively highly doped compared to said relatively highly doped major body portion and extends from said given first semiconductor surface location to a depth greater than the depth of said source region, but less than said first depth of said first and second spaced base regions, whereby resistance to current flow at the junctures between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced.

3. The device of claim 1 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

5. The device of claim 2 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

6. The device of claim 1 wherein said source electrode means makes electrical contact to the surface of said cellular polygonal region and the surface of said annular region-shaped ring.

4. A high power metal oxide silicon field effect transistor device exhibiting relatively low on-resistance and relatively high breakdown voltage;

said device comprising;

a wafer of semiconductor material having first and second opposing semiconductor surfaces;

said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;

at least first and second spaced base regions of the opposite conductivity type to said one conductivity type formed in said wafer and extending from said first semiconductor surface to a first depth beneath said first semiconductor surface;

the space between said at least first and second base regions defining a common conduction region of one conductivity type at a given first semiconductor surface location;

first and second source regions of said one conductivity type formed in each pair of said at least first and second base regions respectively at first and second first surface locations and extending from said first and second first surface locations to a depth less than said first depth;

the outer rim of each of said first and second source regions being laterally spaced along said first semiconductor surface from the lateral outer periphery of its said base region to define first and second channel regions along said first semiconductor surface between each pair of said first and second source regions, respectively, and said common conduction region;

source electrode means connected to said source regions;

gate insulation layer means on said first surface, disposed at least on said first and second channel regions;

gate electrode means on said gate insulation layer means and overlying said first and second channel regions;

a drain conductive region remote from said common region and separated therefrom by said relatively lightly doped major body portion; and

a drain electrode coupled to said drain conductive region;

said common conduction region being relatively highly doped compared to said relatively lightly doped major body portion and extending from said given first semiconductor surface location to a depth greater than the depth of said source region but less than said first depth of said first and second spaced base regions, whereby resistance to current flow at the junctures between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced, wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

7. A three-terminal power metal oxide silicon field effect transistor device comprising:

a wafer of semiconductor material having first and second opposing semiconductor surfaces;

said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;

at least first and second spaced base regions of the opposite conductivity type to said one conductivity type formed in said wafer and extending from said first semiconductor surface to a depth beneath said first semiconductor surface;

the space between said at least first and second base regions defining a common conduction region of one conductivity type at a given first semiconductor surface location;

first and second source regions of said one conductivity type formed in each pair of said at least first and second base regions respectively at first and second first surface locations and extending from said first and second first surface locations to a depth less than said depth of said base regions;

said first and second source regions being laterally spaced along said first semiconductor surface from the facing respective edges of said common conduction region thereby to define first and second channel regions along said first semiconductor surface between each pair of said first and second source regions, respectively and said common conduction region;

source electrode means connected to said source regions and comprising a first terminal;

gate insulation layer means on said first surface, disposed at least on said first and second channel regions;

gate electrode means on said gate insulation layer means, overlying said first and second channel regions and comprising a second terminal;

a drain conductive region remove from said common region and separated therefrom by said relatively lightly doped major body portion;

a drain electrode coupled to said drain conductive region and comprising a third terminal;

each of said at least first and second spaced base regions of said opposite conductivity type having respective profiles which include relatively shallow depth regions extending from said common region and underlying their said respective first and second source regions, and respective relatively deep, relatively large radius regions extending from said shallow depth regions which are laterally spaced from beneath said respective source regions on the side of said source regions which is away from said common region;

at least said first base region being a cellular polygonal region;

said cellular polygonal region being surrounded by said common conduction region;

said first source region having the shape of an annular ring disposed within said cellular polygonal first base region;

said relatively shallow depth region of said first base region surrounding the outer periphery of said relatively deep portion of said first base region.

8. The device of claim 7 wherein said shallow base regions partially underlie their respective source regions.

9. The device of claim 7 wherein said common conduction region is relatively highly doped compared to said relatively lightly doped major body portion and extends from said given first semiconductor surface location to a depth greater than the depth of said source region but less than said depth of said first and second base regions, whereby resistance to current flow at the junctures between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced.

10. The device of claim 8 wherein said common conduction region is relatively highly doped compared to said relatively lightly doped major body portion and extends from said given first semiconductor surface location to a depth greater than the depth of said source region but less than said depth of said first and second base regions, whereby resistance to current flow at the junctures between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced.

11. The device of claim 7 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

12. The device of claim 8 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

13. The device of claim 9 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

14. The device of claim 10 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

15. The device of claim 8, wherein said common conduction region is relatively highly doped compared to said relatively lightly doped major body portion and extends from said given first semiconductor surface location to a depth greater than the depth of said source region but less than said depth of said first and second base regions, whereby resistance to current flow at the junctures between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced.

16. The device of claim 7 wherein said source electrode means makes electrical contact to the surface of said cellular polygonal region and the surface of said annular ring-shaped region.

17. The device of claim 8 wherein said source electrode means makes electrical contact to the surface of said cellular polygonal region and the surface of said annular ring-shaped ring.

18. The device of claim 15 wherein said source electrode means makes electrical contact to the surface of said cellular polygonal region and the surface of said annular ring-shaped ring.

19. A high power metal oxide silicon field effect transistor device exhibiting relatively low on-resistance;

said device comprising;

a wafer of semiconductor material having first and second opposing semiconductor surfaces;

said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;

at least first and second spaced base regions of the opposite conductivity type to said one conductivity type formed in said wafer and extending from said first semiconductor surface to a first depth beneath said first semiconductor surface;

the space between said at least first and second base regions defining a common conduction region of one conductivity type at a given first semiconductor surface location;

first and second source regions of said one conductivity type formed in each pair of said at least first and second base regions respectively at first and second first surface locations and extending from said first and second first surface locations to a depth less than said first depth;

the outer rim of each of said first and second source regions being laterally spaced along said first semiconductor surface from the lateral outer periphery of its said base region to define first and second channel regions along said first semiconductor surface between each pair of said first and second source regions, respectively, and said common conduction region;

source electrode means connected to said source regions;

gate insulation layer means on said first surface, disposed at least on said first and second channel regions;

gate electrode means on said gate insulation layer means and overlying said first and second channel regions;

said wafer including a further region of opposite conductivity type adjoining said lightly doped major body portion; and

an electrode coupled to said further region.

20. The device of claim 19 wherein at least said first base region comprises a cellular polygonal region;

said cellular polygonal region being surrounded by said common conduction region;

said first source region having the shape of an annular ring disposed within said cellular polygonal first base region.

21. The device of claim 19 wherein said common conduction region is relatively highly doped compared to said relatively lightly doped major body portion and wherein said common conduction region extends from said given first semiconductor surface location to a depth greater than the depth of said source region but less than said depth of said first and second base regions, whereby resistance to current flow in the path between said first and second surface channel regions and said common conduction region and between said common conduction region and said relatively lightly doped major body portion is reduced.

22. The device of claim 19 wherein said source electrode means comprises a single sheet of conductive material disposed over and contacting each of said source regions.

23. The device of claim 19 wherein said source electrode means makes electrical contact to the surface of said cellular polygonal base region and the surface of said annular ring-shaped source region.

24. The device of claim 19 wherein each of said at least first and second spaced base regions of said opposite conductivity type have respective profiles which include relatively shallow depth regions extending from said common conduction region and underlying their said respective first and second source regions, and respective relatively deep, relatively large radius regions extending from said shallow depth regions which are laterally spaced from beneath said respective source regions on the side of said source regions which is away from said common conduction region;

said shallow base regions partially underlying their respective source regions.