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Field-effect transistor-type semiconductor sensor

  • US 4,961,833 A
  • Filed: 03/23/1989
  • Issued: 10/09/1990
  • Est. Priority Date: 03/31/1988
  • Status: Expired due to Term
First Claim
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1. A field-effect transistor-type semiconductor sensor comprising:

  • a first semiconductor substrate;

    a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween;

    a source region, a channel region and a drain region, each being provided in said first semiconductor substrate;

    a first insulating film on said first semiconductor substrate;

    a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and

    a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions through said second semiconductor substrate.

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