Field-effect transistor-type semiconductor sensor

• US 4,961,833 A
• Filed: 03/23/1989
• Issued: 10/09/1990
• Est. Priority Date: 03/31/1988
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakamura, Nanao, Sakai, Tadashi, Uno, Shigeki, Koyama, Masao
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US07/327,817
• Time in Patent Office: 565 Days
• Field of Search: 357/25, 204/416, 204/403, 204/415, 204/408, 204/412, 435/291, 435/817
• US Class Current: 257/253
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: Y10S 435/817 Enzyme or microbe electrode

Abstract

A field-effect transistor-type semiconductor sensor is provided which comprises first and second semiconductor substrates bonded strongly to each other interposing a silicon oxide film therebetween by the use of a direct-bonding technique. The first semiconductor substrate is formed into an island-shape, and incorporates a source region, a drain region and a gate region. The island-shaped substrate constitutes an ion-sensitive portion, and is immersed in a solution when in use. The second semiconductor substrate has openings in which source and drain electrodes are formed.

Claims

1. A field-effect transistor-type semiconductor sensor comprising:

a first semiconductor substrate;

a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween;

a source region, a channel region and a drain region, each being provided in said first semiconductor substrate;

a first insulating film on said first semiconductor substrate;

a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and

a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions through said second semiconductor substrate.

2. The sensor of claim 1, wherein said first and second semiconductor substrates include monocrystalline silicon.

3. The sensor of claim 1, wherein said first insulating film includes a silicon oxide film, and said second insulating film includes a silicon nitride film, a tantalum oxide film and an aluminum oxide film.

4. The sensor of claim 1, wherein said first semiconductor substrate is formed as an island.

5. The sensor of claim 4, further comprising first and second insulating films covering the periphery of the sensor.

6. The sensor of claim 4, further comprising first and second insulating films formed on the surfacee of said island-shaped semiconductor substrate, said films extending to the surface of said second semiconductor substrate.

7. The sensor of claim 4, including a plurality of island-shaped semiconductor substrates bonded to said second semiconductor substrate.

8. The sensor of claim 7, further comprising first and second insulating films covering the periphery of the sensor.

9. The sensor of claim 7, further comprising first and second insulating films formed on the surface of said plural island-shaped first semiconductor substrates, said films extending to the surface of said second semiconductor substrate.

10. The sensor of claim 9, further comprising the film being sensitive covering on the second insulating film.

11. The sensor of claim 10, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.

12. The sensor of claim 7, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said plural first island-shaped semiconductor substrates.

13. The sensor of claim 12, further comprising a film being a sensitive covering on the second insulating film.

14. The sensor of claim 13, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.

15. The sensor of claim 13, the film covers on the sensor are inside of the semiconductor protrusion.

16. The sensor of claim 4, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said first island-shaped semiconductor substrate.

17. The sensor of claim 1, further comprising two openings in the second substrate, one opening having a source electrode therein and the other opening having a drain electrode therein, each electrode being connected to a corresponding one of said source and drain regions.

18. The sensor of claim 1, further comprising a single opening in the second substrate having both source and drain electrodes therein, each electrode being connected to a corresponding one of said source and drain regions.

19. The sensor of claim 1, further comprising a temperature-compensating diode in said first semiconductor substrate at a position adjoining one of said source region and said drain region.

20. The sensor of claim 1, wherein said first semiconductor substrate has a thickness of 10 μ

m at a minimum.

21. The sensor of claim 1, wherein said channel region includes a channel stopper region provided at a position adjoining the oxide film on said second semiconductor substrate, said channel stopper region having the same conductivity-type as that of said channel region, and having a higher impurity concentration than said channel region.

22. The sensor of claim 1, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said first semiconductor substrate.

23. The sensor of claim 1, further comprising an insulating member for incorporating the sensor, said insulating member exposing only the ion-sensitive insulating film.

24. The sensor of claim 23, wherein said insulating member is made of resin.

25. The sensor of claim 24, wherein said resin includes epoxy resin.

26. The sensor of claim 1, further comprising a film being a sensitive covering on the second insulating film.

27. The sensor of claim 26, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.

28. A field-effect transistor-type semiconductor sensor comprising:

a first semiconductor substrate;

a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween;

a source region, a channel region and a drain region, each being provided in said first semiconductor substrate;

a first insulating film on said first semiconductor substrate;

a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and

a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions;

wherein there are two openings in the second substrate, one opening having a source electrode therein and the other opening having a drain electrode therein, each electrode being connected to a corresponding one of said source and drain regions.

29. A field-effect transistor-type semiconductor sensor comprising:

a first semiconductor substrate;

a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween;

a source region, a channel region and a drain region, each being provided in said first semiconductor substrate;

a first insulating film on said first semiconductor substrate;

a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and

a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions;

wherein a single opening in the second substrate having both source and drain electrodes therein, each electrode being connected to a corresponding one of said source and drain regions.

30. A field-effect transistor-type semiconductor sensor comprising:

a first semiconductor substrate;

a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween;

a source region, a channel region and a drain region, each being provided in said first semiconductor substrate;

a first insulating film on said first semiconductor substrate;

a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and

a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions;

wherein a temperature-compensating diode in said first semiconductor substrate at a position adjoining one of said source region and said drain region.