Infrared image detector utilizing Schottky barrier junctions

• US 4,962,303 A
• Filed: 06/27/1989
• Issued: 10/09/1990
• Est. Priority Date: 06/27/1989
• Status: Expired due to Fees

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Chu, Tak-Kin
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Messinger, Michael
• Application Number:
  US07/371,884
• Time in Patent Office: 469 Days
• Field of Search: 250/332, 250/338.4, 250/578, 250/211 J, 250/226, 250/208.1, 357/30 H, 357/30 L, 357/30 Q, 357/30 R, 357/30 C
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: Y10S 257/912 Charge transfer device using both electron and hole signal carriers

Abstract

An infrared image detector array is constructed by depositing a plurality non-contiguous strips of infrared radiation responsive, semiconductor material on one side of a base substrate. A contiguous metal semiconductor contact in then overlaid on the plurality of strips thereby forming an individual Schottky barrier detector element wherever the metal contact crosses one of the plurality of strips.

Claims

1. An infrared image detector comprising:

(a) an infrared light transparent substrate;

(b) a plurality of optically responsive materials deposited in a non-contiguous plane on one side of said substrate; and

(c) at least one contiguous metal semiconductor contact deposited on said one side of said substrate and on a portion of said plurality of optically responsive materials wherein an infrared detector element is formed wherever said metal contact crosses one of said plurality of optically responsive materials and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said plurality of optically responsive materials crossed by said contiguous metal contact is a non-ohmic, Schottky barrier connection point.

2. An infrared image detector as in claim 1 wherein said plurality of optically responsive materials comprise semiconductor materials optically responsive to infrared radiation.

3. An infrared image detector as in claim 2, each of said semiconductor materials comprising a material having a distinct chemical composition wherein said formed detector elements respond to wave bands of infrared radiation based upon said chemical composition.

4. An infrared image detector as in claim 2 wherein said semiconductor materials are selected from the group of consisting of lead chalcogenides, alloys of lead chalcogenides with tin chalcogenides, and alloys of lead chalcogenides with cadmium chalcogenides.

5. An infrared image detector as in claim 1 wherein said plurality of optically responsive materials comprises parallel strips of optically responsive materials.

6. An infrared image detector as in claim 5 wherein each of said strips comprise a single layer optically responsive material.

7. An infrared image detector as in claim 5 wherein at least one of said strips comprises multi-layers of optically responsive material.

8. An infrared image detector as in claim 5 wherein said contiguous metal contact is perpendicular to said parallel strips.

9. An infrared image detector as in claim 5 wherein said contiguous metal contact is at an acute angle to said parallel strips.

10. An infrared image detector as in claim 1 wherein said substrate comprises an infrared transparent single crystal material selected from the group consisting of alkalihalides and alkaline earth halides.

11. An infrared image detector as in claim 1 wherein said contiguous metal contact is lead.

12. An infrared image detector comprising:

(a) an infrared light transparent substrate;

(b) a plurality of non-contiguous strips of semiconductor materials deposited on one side of said substrate wherein said strips are optically responsive to infrared radiation;

(c) at least one contiguous metal semiconductor contact deposited on said one side of said substrate and on a portion of at least one of said strips wherein an infrared detector element is formed wherever said metal contact crosses one of said strips and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said strips crossed by said metal contact is a non-ohmic, Schottky barrier connection point.

13. An infrared image detector as in claim 12 wherein said non-contiguous strips are parallel.

14. A multicolored infrared image detector comprising:

(a) an infrared light transparent substrate;

(b) a plurality of optically responsive materials of differing composition deposited in a non-contiguous plane on one side of said substrate whereby the detector is responsive to distinct wavelengths correlated with each of said plurality of optically responsive materials deposited on said substrate; and

(c) at least one contiguous metal semiconductor contact deposited on said substrate and on a portion of said plurality of optically responsive materials wherein an infrared detector element is formed wherever said metal contact crosses one of said plurality of optically responsive materials and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said plurality of optically responsive materials crossed by said contiguous metal contact is a non-ohmic, Schottky barrier connection point.