Sputtering alloy target and method of producing an alloy film

• US 4,963,240 A
• Filed: 03/29/1988
• Issued: 10/16/1990
• Est. Priority Date: 03/30/1987
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ishihara, Hideo, Oana, Yasuhisa, Kawai, Mituo, Fukasawa, Yoshiharu, Umeki, Takenori
• Primary Examiner(s): Nguyen, Nam X.
• Application Number:
  US07/174,959
• Time in Patent Office: 931 Days
• Field of Search: 204/192.15, 204/192.17, 204/298 TS, 204/298 TC, 204/298.13, 204/298.12, 75/245, 75/248
• US Class Current: 204/192.15
• CPC Class Codes: C22C 27/02 Alloys based on vanadium, niobium, or tantalum
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.

Claims

1. A method of producing an alloy film, comprising the steps of:

forming a sputtering target comprising from 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities; and

sputtering an alloy film on a substrate using said sputtering target.

2. A method as claimed in claim 1, wherein the sputtering target is an alloy target comprising 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities.

3. A method as claimed in claim 2, wherein the substrate is a semiconductor and the alloy film is patterned to produce a wiring pattern.

4. A method as claimed in claim 1, wherein the sputtering target is a sintered target comprising a sintered powder material comprising 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities.

5. A method as claimed in claim 4, wherein the substrate is a semiconductor and the alloy film is patterned to produce a wiring pattern.

6. A method as claimed in claim 1, wherein the sputtering target comprises a composite target having areas of tungsten or molybdenum and areas of tantalum in which the area ratio of molybdenum or tungsten to tantalum is adjusted so that the atomic percentage of the molybdenum or tungsten in the alloy film is 15 to 50% and the residue is tantalum and concomitant impurities.

7. A method as claimed in claim 6, wherein the substrate is a semiconductor and the alloy film is patterned to produce a wiring pattern.

8. A method as claimed in claim 1, wherein the substrate is a semiconductor and the alloy film is patterned to produce a wiring pattern.

9. A sputtering target for formation of an alloy film, comprising a composite target having areas of molybdenum or tungsten and areas of tantalum, in which the area ratio of molybdenum or tungsten to tantalum is adjusted so that the atomic percentage of molybdenum or tungsten in the alloy film is 15 to 50% and the remaining atomic percentage is tantalum and concomitant impurities.