Lift off patterning process on a flexible substrate

• US 4,964,945 A
• Filed: 12/09/1988
• Issued: 10/23/1990
• Est. Priority Date: 12/09/1988
• Status: Expired due to Fees

• Current Assignee: 3M Company
• Original Assignee: 3M Company
• Inventors: Calhoun, Clyde D.
• Primary Examiner(s): Lacey, David L.
• Assistant Examiner(s): Burns, Todd J.
• Application Number:
  US07/281,655
• Time in Patent Office: 683 Days
• Field of Search: 156/632, 156/633, 156/634, 156/660, 156/666, 156/668, 156/664, 156/901, 156/902, 427/96, 427/282
• US Class Current: 216/40
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: H05K 3/048 using a lift-off resist pattern or a release layer pattern
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/2982 Particulate matter [e.g., sphere, flake, etc.]
• CPC Class Codes: Y10T 428/2991 Coated
• CPC Class Codes: Y10T 428/2993 Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
• CPC Class Codes: Y10T 428/2998 including synthetic resin or polymer

Abstract

A method of providing patterned, thin-film materials on flexible substrates by depositing a first, etchable, integral mask onto a substrate, depositing a second pattern material over the mask region and then removing the mask, such as by etching. Patterned films useful as printed circuits and the like can be prepared by this method. In an alternate embodiment, patterned particles can be prepared for dispersion in a vehicle or matrix using the described process.

Claims

1. A method of making a patterned deposit on a flexible substrate comprising the steps of:

providing a flexible, sheet-like substrate and integral with at least a portion of one major surface of said sheet a first, etchable masking material which stiffens the flexible substrate and defines physical protrusions generally normal to said surface of said substrate; and

depositing over at least a portion of the masked region a second, pattern material chemically different from said first material, said second, pattern material being deposited primarily on said exposed substrate and mask surfaces which are parallel to the plane of said major surface of said substrate,;

controlling said deposition so that said mask material is not completely covered or sealed; and

applying a chemical agent to selectively etch away said first masking material whereby a pattern of said second material remains on said substrate.

2. A method according to claim 1 wherein said deposition is continuous and is accomplished by continuously moving said substrate past a deposition station.

3. A method according to claim 1 wherein the substrate is a polymeric film.

4. A method according to claim 3 wherein said polymeric film is selected from the group consisting of polyimide and polyester polymers.

5. A method according to claim 1 wherein said mask material is selected to provide rigidity and stability to the substrate during patterning.

6. A method according to claim 5 wherein the mask material is a conductive metal.

7. A method according to claim 5 wherein the masking material is deposited on the substrate by electroplating.

8. A method according to claim 5 wherein the masking material is selected from the group consisting of copper and etchable organic materials.

9. A method according to claim 1 wherein said second material is selected from the group consisting of metals, ceramics, and polymers.

10. A method according to claim 1 wherein said second material is a material selected from the group consisting of electrically conductive, magnetic, and dielectric materials.

11. A method according to claim 1 wherein said second pattern material comprises multiple layers wherein at least one layer is chemically different from at least one other layer.

12. A method according to claim 1 wherein the second material is deposited by a process selected from the group consisting of evaporation and sputtering.

13. A method according to claim 1 wherein said chemical agent for removing the masking material is an acid.

14. A method according to claim 13 wherein said mask is copper and said acid is chromic acid.

15. A method of making articles having a shape corresponding to a pre-selected pattern comprising the steps of:

providing a substrate and covering at least a portion of said substrate with a first, etchable masking material integral with said substrate, and which includes physical protrusions normal to said surface of said substrate,

depositing on at least a portion of the masked region a second, pattern material chemically different from said first masking material, said second pattern material being deposited primarily on said first masking material which is parallel to the surfaces of said substrate; and

discontinuing said deposition before all of said masking material is completely covered; and

applying a chemical agent to selectively etch away said first masking material underneath said pattern material whereby said pieces of said pattern material are released from said substrate.

16. A method according to claim 15 wherein said masking material protrusions define boundaries for said pattern material to be deposited as discrete islands of material.

17. A method according to claim 15 wherein said pattern pieces are separated from said etching material and said substrate and collected together.

18. A method according to claim 17 wherein said collected pieces are dispersed in a liquid vehicle.

19. A method according to claim 17 wherein said collected pieces are dispersed in a polymeric resin.