Semiconductor device

• US 4,965,656 A
• Filed: 02/21/1989
• Issued: 10/23/1990
• Est. Priority Date: 06/06/1986
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Koizumi, Masahiro, Koubuchi, Yasushi, Onuki, Jin
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): PRENTY, MARK V
• Application Number:
  US07/314,246
• Time in Patent Office: 609 Days
• Field of Search: 357/71, 357/2, 357/67, 437/190, 437/192, 437/194
• US Class Current: 257/742
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.

Claims

1. A semiconductor device comprising a semiconductor substrate of silicon, having integrated circuits therein, a diffusion barrier layer formed on said substrate, and an electrode conductor layer formed of aluminum or aluminum-silicon alloy on said diffusion barrier layer, wherein the diffusion barrier layer is an amorphous material layer formed of an amorphous material having a higher crystallization temperature than a temperature of any heat treatment applied to said semiconductor device after the formation of the amorphous material layer, the amorphous material being of an alloy, or a compound, of at least two metals selected from the group consisting of beryllium, boron, silicon, titanium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, iridium, thorium, samarium, gadolinium, and terbium, the at least two metals being in a eutectic composition.

2. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a copper- 15 to 50 atomic % titanium alloy.

3. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 5 to 20 atomic % zirconium alloy.

4. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 60 to 80 atomic % zirconium alloy.

5. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium- 50 to 70 atomic % cobalt alloy.

6. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium - 50 to 70 atomic % nickel alloy.

7. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium-5 to 12 atomic % cobalt alloy.

8. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium - 10 to 50 atomic % nickel alloy.

9. A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 30 to 80 atomic % palladium alloy.

10. A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a titanium- 24 to 55 atomic % beryllium - 5 to 30 atomic % zirconium alloy.

11. A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 15 to 45 atomic % beryllium- 5 to 30 atomic % niobium alloy.

12. A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a cobalt- 10 to 30 atomic % titanium alloy.