Member for a semiconductor structure
First Claim
1. A semiconductor structure, comprising a semiconductor device, an insulating substrate formed as an aluminum nitride sintered body having a first major surface facing said semiconductor device, and a heat radiating heat sink joined to said insulating substrate on a second major surface of said insulating substrate opposite said first major surface, said heat radiating heat sink being made of a metal material having a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×
- 10-6 /K, wherein said thermal conductivity and siad thermal expansion coefficient of said heat radiating heat sink are substantially equal to a respective thermal conductivity and thermal expansion coefficient of siad aluminum nitride of said insulating substrate, said metal material of said heat sink being selected from a first group consisting of tungsten and tungsten alloy, said tungsten alloy containing at least one metal selected from a second group consisting of nickel, copper, iron and cobalt, said second group being present in said tungsten alloy in a proportion of not more than ten percent by weight of said tungsten alloy.
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Accused Products
Abstract
A member for a semiconductor structure is constructed, for example, as a mounting, or as a cover, or as a heat sink. Such a component is obtained by joining an aluminum nitride insulating substrate and a radiating element. The metal material for forming the radiating member has a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×10-6 /K-1. Preferably the material forming the radiating element is made of a tungsten alloy containing copper by not more than 5 percent by weight.
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Citations
9 Claims
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1. A semiconductor structure, comprising a semiconductor device, an insulating substrate formed as an aluminum nitride sintered body having a first major surface facing said semiconductor device, and a heat radiating heat sink joined to said insulating substrate on a second major surface of said insulating substrate opposite said first major surface, said heat radiating heat sink being made of a metal material having a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×
- 10-6 /K, wherein said thermal conductivity and siad thermal expansion coefficient of said heat radiating heat sink are substantially equal to a respective thermal conductivity and thermal expansion coefficient of siad aluminum nitride of said insulating substrate, said metal material of said heat sink being selected from a first group consisting of tungsten and tungsten alloy, said tungsten alloy containing at least one metal selected from a second group consisting of nickel, copper, iron and cobalt, said second group being present in said tungsten alloy in a proportion of not more than ten percent by weight of said tungsten alloy.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
Specification