Member for a semiconductor structure

• US 4,965,659 A
• Filed: 06/28/1988
• Issued: 10/23/1990
• Est. Priority Date: 06/30/1987
• Status: Expired due to Term

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Sasame, Akira, Yamakawa, Akira, Miyake, Masaya, Sakanoue, Hitoyuki
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): LOKE, STEVEN HO YIN
• Application Number:
  US07/212,950
• Time in Patent Office: 847 Days
• Field of Search: 357/81, 357/74, 357/71
• US Class Current: 257/720
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12033 Gunn diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]

Abstract

A member for a semiconductor structure is constructed, for example, as a mounting, or as a cover, or as a heat sink. Such a component is obtained by joining an aluminum nitride insulating substrate and a radiating element. The metal material for forming the radiating member has a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×10^-6 /K^-1. Preferably the material forming the radiating element is made of a tungsten alloy containing copper by not more than 5 percent by weight.

Claims

1. A semiconductor structure, comprising a semiconductor device, an insulating substrate formed as an aluminum nitride sintered body having a first major surface facing said semiconductor device, and a heat radiating heat sink joined to said insulating substrate on a second major surface of said insulating substrate opposite said first major surface, said heat radiating heat sink being made of a metal material having a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×

10^-6 /K, wherein said thermal conductivity and siad thermal expansion coefficient of said heat radiating heat sink are substantially equal to a respective thermal conductivity and thermal expansion coefficient of siad aluminum nitride of said insulating substrate, said metal material of said heat sink being selected from a first group consisting of tungsten and tungsten alloy, said tungsten alloy containing at least one metal selected from a second group consisting of nickel, copper, iron and cobalt, said second group being present in said tungsten alloy in a proportion of not more than ten percent by weight of said tungsten alloy.

2. The semiconductor structure of claim 1, wherein said semiconductor device is secured to said first major surface of said substrate.

3. The semiconductor structure of claim 1, wherein said insulating substrate includes a covering means for covering and protecting said semiconductor device on said substrate.

4. The semiconductor structure of claim 1, further comprising a metallized layer formed on at least one of said first and second major surfaces of said insulating substrate.

5. The semiconductor structure of claim 4, wherein said metallized layer contains at least one metal selected from a third group consisting of tungsten, molybdenum, and at least one compound selected from a fourth group consisting of aluminum nitride, aluminum oxide, aluminum oxynitride, and calcium oxide.

6. The semiconductor structure of claim 4, further comprising soldering means for joining said metallized layer to said heat radiating heat sink.

7. The semiconductor structure of claim 6, further comprising a plating layer formed on a junction surface between said metallized layer and said soldering means.

8. The semiconductor structure of claim 6, further comprising a plating layer formed on a junction surface between said heat radiating heat sink and said soldering means.

9. The semiconductor structure of claim 1, wherein said copper of said second group is present in a proportion of not more than 5 percent by weight of said tungsten alloy.