Insulated gate bipolar transistor power module

• US 4,965,710 A
• Filed: 11/16/1989
• Issued: 10/23/1990
• Est. Priority Date: 11/16/1989
• Status: Expired due to Term

• Current Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Dubhashi, Ajit, Pelly, Brian R., Ewer, Peter R.
• Primary Examiner(s): BEHA JR, WILLIAM
• Application Number:
  US07/438,094
• Time in Patent Office: 341 Days
• Field of Search: 363/56, 363/132, 363/141, 363/144, 363/147, 361/386, 361/388, 357/81
• US Class Current: 363/56.03
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/538 in a push-pull configuration H02M7/5375 takes precedence ; with oscillating arrangements H02M7/53832, H02M7/53846
• CPC Class Codes: H03K 17/0828 in composite switches
• CPC Class Codes: H03K 17/12 Modifications for increasing the maximum permissible switched current
• CPC Class Codes: H03K 17/122 in field-effect transistor switches
• CPC Class Codes: H03K 17/127 : in composite switches

Abstract

A power module contains IGBT die along with integrated circuit driver chips and opto isolators or isolation transformers within the same module housing. Output terminals are provided which can be interfaced directly to control logic or microprocessors for operating the module. The IGBTs may have current-sensing electrodes to simplify current measurement and control functions.

Claims

1. A semiconductor device power module comprising, in combination a conductive heat sink, a plurality of power semiconductor die mounted in thermal conductive relation with said conductive heat sink;

each of said power semiconductor die having a pair of main power terminals and a control terminal operable to turn its respective die on and off;

a control circuit semiconductor device for each of said power die;

said control circuit semiconductor devices having input terminals and output terminals;

said output terminals of said control circuit semiconductor devices being connected between at least one of said main power terminals and said control terminal of their respective power die;

an isolation coupler device for each of said control circuit semiconductor devices having isolated input and output terminals;

said isolation coupler device output terminals connected to said input terminals of their respective control circuit semiconductor device;

a local power supply for each of said control circuit semiconductor devices which is coupled between and energized by selected power terminals of said power semiconductor die;

an insulation housing connected to said conductive heat sink and enclosing each of said power semiconductor die, said control circuit semiconductor devices, said isolation coupler devices and said local power supplies and their interconnections;

a plurality of external power connection terminals fixed to the exterior surface of said insulation housing and electrically connected to said main power terminals of said power semiconductor die; and

a plurality of external control terminals fixed to the exterior surface of said insulation housing and electrically connected to said input terminals of said isolation coupler devices.

2. The power module of claim 1 wherein each of said power semiconductor die have a further current-sensing terminal which has an output current generally proportional to the current between its pair of main power terminals;

each of said control circuit semiconductor devices including current-responsive control circuits and terminals therefor;

said current-sensing terminal of said power semiconductor die being coupled to said current-responsive control circuit of its respective control circuit semiconductor device.

3. The module of claim 2 wherein each of said power semiconductor die are IGBTs.

4. The module of claim 3 which further includes a plurality of power diodes in die form;

each of said power diodes thermally coupled to said heat sink and respectively connected in parallel with respective ones of said power semiconductor die and acting as respective freewheeling diodes.

5. The module of claim 1 wherein said local power supply comprises a Zener diode.

6. The module of claim 2 wherein said local power supply comprises a Zener diode.

7. The module of claim 3 wherein said local power supply comprises a Zener diode.

8. The module of claim 4 wherein said local power supply comprises a Zener diode.

9. The module of claim 1 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

10. The module of claim 2 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

11. The module of claim 3 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

12. The module of claim 4 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

13. The module of claim 6 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

14. The module of claim 8 wherein said external power connection terminals include at least first and second d.c. terminals coupled to first and second power semiconductor die and an a.c. terminal connected to each of said first and second power semiconductor die, whereby said module defines at least a half bridge structure.

15. The module of claim 1 wherein said power semiconductor die are selected from the group consisting of MOSFETs, IGBTs, thyristors, Darlington-connected transistors and power transistors.

16. The module of claim 5 wherein said power semiconductor die are selected from the group consisting of MOSFETs, IGBTs, thyristors, Darlington-connected transistors and power transistors.

17. The module of claim 9 wherein said power semiconductor die are selected from the group consisting of MOSFETs, IGBTs, thyristors, Darlington-connected transistors and power transistors.