Method for forming a silicon membrane with controlled stress

• US 4,966,663 A
• Filed: 09/13/1988
• Issued: 10/30/1990
• Est. Priority Date: 09/13/1988
• Status: Expired due to Term

• Current Assignee: Nanostructures, Inc.
• Original Assignee: Nanostructures, Inc.
• Inventors: Mauger, Philip E.
• Primary Examiner(s): Valentine, Donald R.
• Application Number:
  US07/243,816
• Time in Patent Office: 777 Days
• Field of Search: 204/129.3, 204/129.65, 204/295
• US Class Current: 205/656
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: B81C 2201/0164 by doping the layer
• CPC Class Codes: C23C 14/0005 Separation of the coating from the substrate
• CPC Class Codes: C25F 3/12 of semiconducting materials
• CPC Class Codes: H01L 21/3063 Electrolytic etching
• CPC Class Codes: Y10S 438/924 To facilitate selective etching

Abstract

A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.

Claims

1. A method for fabricating a silicon membrane with a desired characteristic and level of internal stress comprising the steps of:

(a) selecting a silicon substrate with a first electrical conductivity characteristic, said substrate having first and second opposite sides;

(b) selecting a dopant according to the desired characteristic of internal stress, said dopant having a second electrical conductivity characteristic of opposite polarity to said first electrical conductivity characteristic;

(c) forming a doped layer of predetermined thickness adjacent to said first surface of said substrate wherein the concentration of said dopant is selectively controlled to provide the desired level of internal stress in said doped layer;

(d) electrochemically etching a portion of said second surface of said substrate to a boundary of said doped layer, thereby forming a stress controlled membrane having a thickness approximately equal to the thickness of said doped layer.

2. The method of claim 1 wherein said silicon substrate is n type and said dopant is p type.

3. The method of claim 1 wherein said silicon substrate is p type and said dopant is n type.

4. The method of claim 1 wherein said doped layer is formed by a diffusion process.

5. The method of claim 1 wherein said doped layer is formed by an ion implantation process.

6. The method of claim 1 wherein said doped layer is formed epitaxially.

7. The method of claim 1 wherein said doped layer has a uniform concentration of said dopant.

8. The method of claim 1 herein said doped layer has a concentration of said dopant that varies as a function of depth below said first surface of said substrate.

9. The method of claim 1 wherein said doped layer has a concentration of said dopant that varies as a function of lateral position on said first surface.

10. The method of claim 1 further comprising the step, after step (d), of doping said membrane with said dopant, thereby increasing the concentration of said dopant within said membrane.

11. The method of claim 1 wherein said dopant is a first dopant and further comprising the step, after step (d), of doping said membrane with a second dopant different than said first dopant.

12. The method of claim 1 wherein said desired characteristic of internal stress is tensile.

13. The method of claim 12 wherein said dopant is selected from the group consisting of boron and phosphorus.

14. The method of claim 1 wherein said desired characteristic of internal stress is compressive.

15. The method of claim 14 wherein said dopant is selected from the group consisting of antimony and tin.