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Structure for use in self-biasing and source bypassing a packaged, field-effect transistor and method for making same

  • US 4,967,258 A
  • Filed: 03/02/1989
  • Issued: 10/30/1990
  • Est. Priority Date: 03/02/1989
  • Status: Expired due to Fees
First Claim
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1. A self-biased and source bypassed, packaged, field-effect transistor structure, comprising:

  • a packaged, field-effect transistor including a housing having a defined width, a field-effect transistor located within said housing, and first and second source leads extending from said field-effect transistor, through said housing, and outward from said housing;

    means for grounding, wherein at least a portion of said housing is located intermediate said packaged, field-effect transistor and said means for grounding;

    a source resistor for use in biasing the field-effect transistor, said source resistor having a first terminal electrically contacting said means for grounding and a second terminal electrically contacting at least one of the source leads;

    a first capacitor for use in grounding the first source lead of the field-effect transistor during AC operation, said first capacitor having a first lower plate electrically contacting said means for grounding and a first upper plate separated from said first lower plate by a first dielectric, wherein said first upper plate of said first capacitor is positioned adjacent to the first source lead of the packaged, field-effect transistor for direct electrical connection therewith;

    a second capacitor for use in grounding the second source lead of the field-effect transistor during AC operation, said second capacitor have a second lower plate electrically contacting said means for grounding and a second upper plate separated from said second lower plate by a second dielectric, wherein said second upper plate of said second capacitor is positioned adjacent to the second source lead of the packaged, field-effect transistor for direct electrical connection therewith.

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