Enzyme sensor

• US 4,968,400 A
• Filed: 07/19/1989
• Issued: 11/06/1990
• Est. Priority Date: 11/20/1986
• Status: Expired due to Term

• Current Assignee: Terumo Kabushiki Kaisha
• Original Assignee: Terumo Kabushiki Kaisha
• Inventors: Uchida, Naoto, Yamaguchi, Shuichiro, Shimomura, Takeshi
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US07/359,763
• Time in Patent Office: 475 Days
• Field of Search: 435/817, 435/291, 357/25, 204/403, 204/1 E
• US Class Current: 257/253
• CPC Class Codes: C12Q 1/004 mediator-assisted
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: Y10S 435/817 Enzyme or microbe electrode

Abstract

PCT Filed Nov. 19, 1987 PCT Pub. No. WO88/04050 PCT Pub. Date Jun. 2, 1988.

An insulative substrate (1) is coated with an electrically conductive layer (2) and a redox layer (3) which comprises an electrolytic polymerization film of 2,6-dimethylphenol, and the surface of the redox layer is provided with an enzyme-fixed (7). The enzyme electrode thus obtained exhibits a potentiometric response, and the enzyme-fixed layer has a strong adhesion. As a result, sensitivity is high, there is little drift and service life is prolonged. An ion-selective field-effect transistor can be used instead of the insulative substrate (1).

Claims

1. An enzyme sensor characterized by comprising:

an insulating substrate;

an electrically conductive layer coating said insulating substrate;

a redox layer having an oxidation-reduction function formed on a surface of said electrically conductive layer by an electrolytic oxidative polymerization process; and

an enzyme-fixed layer coating a surface of said redox layer and having an enzyme fixed thereto.

2. The enzyme sensor according to claim 1, characterized in that said insulating substrate is selected from among substances exhibiting an insulating property.

3. The enzyme sensor according to claim 1, characterized in that said electrically conductive layer is selected from among substances manifesting an oxidation-reduction reaction.

4. The enzyme sensor according to claim 1, characterized in that said redox layer is a layer sensitive to hydrogen ion concentration.

5. The enzyme sensor according to claim 1, characterized in that said enzyme layer is formed by an electrolytic (oxidative) polymerization process.

6. The enzyme sensor according to claim 1, characterized in that said enzyme-fixed layer is formed by a crosslinking process or by an incorporating process.

7. An enzyme sensor characterized by comprising:

a MOSFET;

an electrically conductive layer coating a gate insulating film of said MOSFET;

a redox layer having an oxidation-reduction function formed on a surface of said electrically conductive layer by an electrolytic oxidative polymerization process; and

an enzyme-fixed layer coating a surface of said redox layer and having an enzyme fixed thereto.

8. The enzyme sensor according to claim 7, characterized in that said electrically conductive layer is selected from among substances manifesting an oxidation-reduction reaction.

9. The enzyme sensor according to claim 7, characterized in that said electrically conductive layer is an isolated gate formed at a small distance from a FET portion.

10. The enzyme sensor according to claim 7, characterized in that said redox layer is a layer sensitive to hydrogen ion concentration.

11. The enzyme sensor according to claim 7, characterized in that said enzyme-fixed layer is formed by an electrolytic (oxidative) polymerization process.

12. The enzyme sensor according to claim 7, characterized in that said enzyme-fixed layer is formed by a crosslinking process or by an incorporating process.