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Method of fabricating back diffused bonded oxide substrates

  • US 4,968,628 A
  • Filed: 12/09/1988
  • Issued: 11/06/1990
  • Est. Priority Date: 12/09/1988
  • Status: Expired due to Term
First Claim
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1. A method of fabricating back diffused, oxide bonded substrates comprising:

  • forming an alignment moat of a first depth in a first surface of a substrate having a first conductivity type;

    introducing impurities of a second conductivity type through said first surface to form second regions using said alignment moat for alignment;

    introducing impurities of said first conductivity type through said first surface to form first regions using said alignment moat for alignment;

    positioning a handle wafer having a first oxide layer thereon on said first surface and heating to bond said substrate to said handle wafer;

    removing portions of said substrate from a second surface opposite said first surface until said substrate has a thickness less than said first depth to expose said alignment moat at a third surface; and

    subsequently performing process steps on said third surface using said alignment moat for alignment.

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