Method of fabricating back diffused bonded oxide substrates
First Claim
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1. A method of fabricating back diffused, oxide bonded substrates comprising:
- forming an alignment moat of a first depth in a first surface of a substrate having a first conductivity type;
introducing impurities of a second conductivity type through said first surface to form second regions using said alignment moat for alignment;
introducing impurities of said first conductivity type through said first surface to form first regions using said alignment moat for alignment;
positioning a handle wafer having a first oxide layer thereon on said first surface and heating to bond said substrate to said handle wafer;
removing portions of said substrate from a second surface opposite said first surface until said substrate has a thickness less than said first depth to expose said alignment moat at a third surface; and
subsequently performing process steps on said third surface using said alignment moat for alignment.
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Abstract
A method including forming an alignment moat of a first depth on a first surface of a substrate and performing all backside processing, forming a first oxide layer on the first surface and oxide bonding it to a handling wafer by oxide bonding. The substrate is then thinned from a second surface opposite the first surface down to a thickness less than the depth of the alignment moat so the alignment moat is exposed at a third surface for front side processing.
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Citations
19 Claims
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1. A method of fabricating back diffused, oxide bonded substrates comprising:
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forming an alignment moat of a first depth in a first surface of a substrate having a first conductivity type; introducing impurities of a second conductivity type through said first surface to form second regions using said alignment moat for alignment; introducing impurities of said first conductivity type through said first surface to form first regions using said alignment moat for alignment; positioning a handle wafer having a first oxide layer thereon on said first surface and heating to bond said substrate to said handle wafer; removing portions of said substrate from a second surface opposite said first surface until said substrate has a thickness less than said first depth to expose said alignment moat at a third surface; and subsequently performing process steps on said third surface using said alignment moat for alignment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification