Arrangement for improving the longterm stability of a Hall element

• US 4,970,411 A
• Filed: 04/19/1989
• Issued: 11/13/1990
• Est. Priority Date: 04/21/1988
• Status: Expired due to Fees

• Current Assignee: LGZ Landis & Gyr Zug AG (Landis+Gyr Group AG)
• Original Assignee: LGZ Landis & Gyr Zug AG (Landis+Gyr Group AG)
• Inventors: Furrer, Beat, De Vries, Jacob, Halg, Beat
• Primary Examiner(s): Zazworsky, John
• Application Number:
  US07/340,274
• Time in Patent Office: 573 Days
• Field of Search: 307/309, 307/491, 328/160, 357/27, 324/208, 324/225, 324/251, 324/252
• US Class Current: 327/511
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

An arrangement which eliminates or reduces the negative influence of small variations in the charge-carrier concentration of a semiconductor material upon the longterm stability of a magnetic field sensor such as a Hall element is disclosed. In an illustrative embodiment, the arrangement comprises a magnetic field sensor, a voltage/current converter which provides a supply current to the magnetic field sensor, an amplifier connected sequentially downstream of the voltage/frequency converter, and an analog/digital or voltage/frequency converter connected sequentially downstream of the amplifier. The amplifier provides a transmission ratio which is proportional to (1+δn/n) or (1-δn/n) where n is the carge-carrier concentration of the semiconductor material in which the magnetic field sensor is formed and δn is a variation in time of the charge-carrier concentration n. The amplifier comprises an inverting amplifier which is formed using an operational amplifier, a feedback resistor and an input resistor. The amplification factor of the amplifier is proportional to the ratio of the resistance values of the two resistors which are incorporated by diffusion in a semiconductor body near the magnetic field sensor. The charge-carrier concentration in one of the two resistors is preferably identical to the charge-carrier concentration (n) in the magnetic field sensor and the charge-carrier concentration in the other resistor is equal to a multiple of the charge-carrier concentration (n). The factor (1+δn/n) or 1-δn/n) compensates for changes in the output voltage of the magnetic field sensor resulting from the variations in the charge-carrier concentration in the magnetic field sensor.

Claims

1. A combination comprising

a magnetic field sensor, an output signal of said combination being proportional to an output signal of said magnetic field sensor,

a semiconductor body, a portion of said semiconductor body containing said magnetic field sensor, said magnetic field sensor having a charge-carrier concentration and the output signal of said magnetic field sensor being inverse proportional to said charge-carrier concentration,

a correction means comprising at least two electrical devices each having impedance value, at least one of said electrical devices being formed in a portion of said semiconductor body and an output signal of said correction means being proportional at least to a first power of a ratio of the impedance values of two of said electrical devices, and

said correction means being electrically connected to said magnetic field sensor to provide an output signal of said combination which is substantially independent of variations of said charge-carrier concentration.

2. The combination of claim 1 wherein said two electrical devices are resistors, said resistors being formed in a portion of said semiconductor body near said magnetic field sensor, and wherein said ratio of impedance values is the ratio of the resistance values of said resistors, an output signal of said correction means being proportional to the first power of said ratio and the charge-carrier concentration in one of said both resistors being equal to a multiple of the charge-carrier concentration in the other of said both resistors.

3. The combination of claim 2 wherein the charge-carrier concentration in one of both resistors is substantially equal to one-half the charge-carrier concentration of the other of said both resistors, the charge-carrier concentration in said other resistor being substantially equal to said charge-carrier concentration in said magnetic field sensor.

4. The combination of claim 2 wherein said correction means comprises an amplifier, said amplifier having an input which receives a reference voltage and having an amplification factor which is proportional to said ratio of resistance values.

5. The combination of claim 4 wherein said amplifier comprises an inverting amplifier formed using an operational amplifier, one of said both resistors being a feedback resistor connected between the output and an inverting input of said operational amplifier, the other of said both resistors being an input resistor connected to said inverting input of said operational amplifier.

6. The combination of claim 4, wherein said amplifier comprises a first and a second inverting amplifier, said both inverting amplifiers being connected in cascade and formed from first and second operational amplifiers respectively, wherein one of said both resistors is connected as a feedback resistor between the output of said first operational amplifier and an inverting input of said first operational amplifier, wherein the other of said both resistors is connected as an input resistor to an inverting input of said second operational amplifier, wherein a third resistor is connected as an input resistor to said inverting input of said first operational amplifier, and wherein a fourth resistor is connected as a feedback resistor between an output of said second operational amplifier and said inverting input of said second operational amplifier.

7. The combination of claim 1 wherein said two electrical devices are capacitors, at least one of said capacitors being a depletion layer capacitor, said depletion layer capacitor being formed in a portion of said semiconductor body near said magnetic field sensor, and wherein said ratio of impedance values is the ratio of the capacitance of said capacitors, the output signal of said correction means being proportional to the square power of said ratio and the charge-carrier concentration in said depletion layer capacitor being substantially equal to said charge-carrier concentration in said magnetic field sensor.

8. The combination of claim 7 wherein said correction means comprises an amplifier, said amplifier having an input which receives a reference voltage and having an amplification factor which is proportional to the square of said ratio of capacitance values.

9. The combination of claim 8 wherein said amplifier comprises two inverting amplifiers connected in cascade, each of both said inverting amplifiers being formed using an operational amplifier and each comprising a set of two said capacitors, wherein both sets of two capacitors are substantially identical and wherein in each set one of the two said capacitors is a feedback capacitor and the an input capacitor, wherein in each of both said inverting amplifiers said feedback capacitor is connected between the output of said operational amplifier and an inverting input of that operational amplifier, wherein each of said inverting amplifiers further comprises five switches, a first of said switches, said input capacitor and a second of said switches being serial connected and said serial connected devices being connected between an input of said inverting amplifier and the inverting input of its associated operational amplifier, wherein in each of both said inverting amplifiers a third and a fourth of said switches are grounding first and second poles of said input capacitor, respectively, and wherein in each of said inverting amplifiers said feedback capacitor is connected in parallel by the fifth of said switches.

10. The combination of claim 1 wherein said correction means comprises an impedance converter comprising a voltage follower and a resistor located upstream from said voltage follower, wherein said resistor is formed in a portion of said semiconductor body near said magnetic field sensor, wherein the charge-carrier concentration of said resistor is approximately at least five times larger than said charge-carrier concentration in said magnetic field sensor, wherein said impedance converter is supplied by a voltage/current converter with a current, and wherein said resistor is connected via said voltage follower to the supply current input of said magnetic field sensor.

11. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 or 10 wherein said correction means is located in a supply current input circuit of said magnetic field sensor.

12. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 or 10 wherein said combination comprises a multiplier, the output of said correction means being connected to a first input of said multiplier, said multiplier having a second input which is connected to a network voltage and an output which is connected via a voltage/current converter to a supply current input of aid magnetic field sensor.

13. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 wherein said correction means is connected downstream of said magnetic field sensor.

14. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 wherein said combination comprises a converter located downstream of said magnetic field sensor, an output of said correction means being connected to a reference input of said converter.

15. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 wherein said combination comprises a voltage/frequency converter located downstream of said magnetic field sensor, an output of said correction means being connected to reference frequency input of said voltage/frequency converter.

16. The combination of claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9 wherein said combination comprises a converter located downstream of said magnetic field sensor, an output of said correction means being connected to a reference input of said converter, and wherein said correction means comprises an additional magnetic field sensor, said additional magnetic field sensor having approximately the same dimensions as the first magnetic field sensor and being located in a portion of said semiconductor body in close proximity to the first magnetic field sensor.