Method and apparatus for sensing thermal stress in integrated circuits

• US 4,970,497 A
• Filed: 11/22/1989
• Issued: 11/13/1990
• Est. Priority Date: 11/22/1989
• Status: Expired due to Fees

• Current Assignee: Northrop Grumman Corporation
• Original Assignee: Westinghouse Electric Corporation (Paramount Global (f/k/a ViacomCBS Inc.))
• Inventors: Havlik, John, Broadwater, Stuart P.
• Primary Examiner(s): Orsino, Joseph A.
• Assistant Examiner(s): MULLEN, THOMAS J
• Application Number:
  US07/440,137
• Time in Patent Office: 356 Days
• Field of Search: 340/598, 340/660, 307/310, 364/557, 73/204.26
• US Class Current: 340/598
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H02H 5/044 using a semiconductor device to sense the temperature

Abstract

An integrated semiconductor chip includes, integral to its substrate, a thermal sensing circuit formed from an array of transistors connected together in a stacked array so as to multiply the inherent effects of temperature on output voltage. A series of gates is connected to the output of the transistor array. A reference voltage is applied to the transistor array, and the inherent temperature-variable output of the array is then applied to the gates. The gates change states at known temperatures and voltages, so that the digital state output of each gate indicates whether the substrate temperature is greater than or less than the switching temperature associated with that gate. By sensing gate output, the chip itself or an external device can determine the temperature of the substrate within a certain range. When the temperature is outside the safe operating range for the chip, the chip or an external device takes steps to prevent unsafe operation. The invention exploits the inherent temperature dependency of the current output of MOS transistors to form a temperature sensing circuit that is highly accurate and inexpensive.

Claims

1. An improved integrated semiconductor chip of the type including a plurality of semiconductive devices integrated onto a common substrate wherein the conductivity of said semiconductive devices inherently varies with temperature, comprising a thermal stress sensing circuit, said circuit having an input and an output and being formed from at least some of said semiconductive devices that are interconnected in such a way as to amplify the inherent variance with temperature of the conductivity of said devices, wherein the input of the stress sensing circuit is connected to a fixed voltage source, and the voltage output of the said circuit varies with temperature, wherein the output of the stress sensing circuit is connected to a control means that reduces power to the integrated semiconductor chip when the voltage output of the said stress sensing circuit reaches a selected level.

2. The device of claim 1 wherein the control means operates to stop power to the integrated semiconductor chip when the voltage output of the said stress sensing circuit reaches a selected level.

3. An improved integrated semiconductor chip of the type including a plurality of semiconductive devices integrated onto a common substrate wherein the conductivity of said semiconductive devices inherently varies with temperature, comprising a thermal stress sensing circuit, said circuit having an input and an output and being formed from at least some of said semiconductive devices that are interconnected in such a way as to amplify the inherent variance with temperature of the conductivity of said devices, wherein the input of the stress sensing circuit is connected to a fixed voltage source, and the voltage output of the said circuit varies with temperature, further comprising duty cycle control means for responding to the voltage output of the stress sensing circuit, said duty cycle control means operating to reduce the operating duty cycle of the chip when the voltage output reaches a selected level.

4. An improved integrated semiconductor chip of the type including a plurality of semiconductive devices integrated onto a common substrate wherein the conductivity of said semiconductive devices inherently varies with temperature, comprising a thermal stress sensing circuit, said circuit having an input and an output and being formed from at least some of said semiconductive devices that are interconnected in such a way as to amplify the inherent variance with temperature of the conductivity of said devices, wherein the input of the stress sensing circuit is connected to a fixed voltage source, and the voltage output of the said circuit varies with temperature, wherein the thermal stress sensing circuit comprises a transistor array.

5. The device of claim 4 wherein the said transistor array comprises a stacked plurality of field effect transistors, each transistor having a gate, drain, and source terminal, the stack including a first transistor and a last transistor, wherein the gate of each transistor is connected to a common reference voltage, the source of each transistor other than the last transistor is solely connected to the drain of one transistor other than the first transistor, the source of the last transistor is connected to ground, and the drain of the first transistor is connected through a voltage pull-up means to a voltage source, the output voltage of the thermal stress sensing circuit being sensed at the drain of the said first transistor.

6. A thermal stress measurement system comprising thermal responding means integral with an integrated semiconductor chip for varying a voltage in response to temperature changes, and voltage sensing means for sensing the voltage output of the thermal responding means and providing a signal responsive to said voltage output, wherein the signal provided by the said voltage sensing means provides an indication of the temperature on the chip, further comprising control means for responding to the signal provided by the voltage sensing means, said control means operating to reduce power to the integrated semiconductor chip when the signal indicates that the temperature on the chip is outside a defined operating range.

7. The system of claim 6 wherein the control means operates to stop power to the chip when the signal indicates that the temperature on the chip is outside a defined operating range.

8. A thermal stress measurement system comprising thermal responding means integral with an integrated semiconductor chip for varying a voltage in response to temperature changes, and voltage sensing means for sensing the voltage output of the thermal responding means and providing a signal responsive to said voltage output, wherein the signal provided by the said voltage sensing means provides an indication of the temperature on the chip, further comprising duty cycle control means for responding to the signal provided by the voltage sensing means, said duty cycle control means operating to reduce the operating duty cycle of the chip when the signal indicates that the temperature on the chip exceeds a defined threshold.

9. A thermal stress measurement system comprising thermal responding means integral with an integrated semiconductor chip for varying a voltage in response to temperature changes, and voltage sensing means for sensing the voltage output of the thermal responding means and providing a signal responsive to said voltage output, wherein the signal provided by the said voltage sensing means provides an indication of the temperature on the chip, wherein the thermal responding means comprises a transistor array.

10. The system of claim 9 wherein the said transistor array comprises a stacked plurality of field effect transistors, each transistor having a gate, drain, and source terminal, the stack including a first transistor and a last transistor, wherein the gate of each transistor is connected to a common reference voltage, the source of each transistor other than the last transistor is solely connected to the drain of one transistor other than the first transistor, the source of the last transistor is connected to ground, and the drain of the first transistor is connected through a voltage pull-up means to a voltage source, the output voltage of the thermal responding means being sensed at the drain of the said first transistor.

11. The system of claim 9 wherein the voltage sensing means comprises one or more logic gates which change their output voltage state in response to known input voltages.

12. The system of claim 9 wherein the voltage sensing means comprises an analog-to-digital converter which senses the voltage produced by the thermal responding means and produces a digital signal representative of chip temperature.