Power semiconductor module and method for producing the module

• US 4,970,576 A
• Filed: 05/19/1988
• Issued: 11/13/1990
• Est. Priority Date: 05/23/1987
• Status: Expired due to Term

• Current Assignee: IXYS Corporation (Littelfuse Incorporated)
• Original Assignee: Asea Brown Boveri AG (ABB Limited)
• Inventors: Hettmann, Hubert, Neidig, Arno
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Nguyen, Viet Q.
• Application Number:
  US07/196,125
• Time in Patent Office: 908 Days
• Field of Search: 357/72, 357/74, 357/81, 361/386, 361/389, 361/385
• US Class Current: 257/701
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 24/40 of an individual strap connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01055 : Cesium [Cs]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A power semiconductor module and method for producing the module includes a plastic housing having a lower surface. An electrically insulating substrate having an upper surface is inserted in the lower surface of the plastic housing for supporting electrical components. A metallization is disposed at least on the upper surface of the substrate. The metallization on the upper surface of the substrate is patterned to form conductor tracks. Components are soldered onto the patterned metallization. Locating compartments disposed in the plastic housing form a soldering jig for the components during production of the module.

Claims

1. Power semiconductor module, comprising a plastic housing having a lower surface, an electrically insulating substrate having an upper surface and being disposed on said lower surface of said plastic housing for supporting electrical components, a metallization disposed at least on said upper surface of said substrate, said metallization on said upper surface of said substrate being patterned to form conductor tracks, electrical components soldered onto said patterned metallization with soft solder having a given soldering temperature, and locating compartments disposed in said plastic housing forming a soldering jig for said electrical components during production of the module, said housing being formed of a temperature-resistant plastic which withstands a temperature at least as high as said given soldering temperature.

2. Power semiconductor module according to claim 1, wherein said components are semiconductor components and connecting elements for plug connectors being soldered onto said patterned metallization.

3. Power semiconductor module according to claim 1, wherein said locating compartments are in the form of recesses formed in said plastic housing.

4. Power semiconductor module according to claim 1, wherein said components include connecting lugs having a lug part and a connecting part formed thereon, and said locating compartments have a cross-shaped structure as seen in a plan view, with a wide compartment part for guiding said lug part and a narrow compartment part for guiding said connecting part.

5. Power semiconductor module according to claim 1, wherein said plastic housing is subdivided into a housing frame and a housing cover.

6. Power semiconductor module according to claim 1, wherein said plastic housing includes a housing frame and other parts of said housing, and at least said housing frame is formed of a plastic with a melting point above 200°

C.

7. Power semiconductor module according to claim 1, including control terminals having plug connectors with a welded-on piece of wire connected to said patterned metallization.

8. Power semiconductor module according to claim 7, wherein said plug connectors are inserted in pockets formed in said housing frame.

9. Power semiconductor module according to claim 1, wherein said substrate is a ceramic substrate.

10. Power semiconductor module according to claim 1, wherein said substrate is a metal substrate having an electrically insulating layer to which said conductor tracks are applied, and said conductor tracks are formed of copper.

11. Power semiconductor module according to claim 1, wherein said locating components are also formed of said temperature- resistant plastic.

12. Power semiconductor module according to claim 1, wherein said locating components are formed directly in said plastic housing.