Semiconductor photoelectric conversion device and method of making the same
First Claim
Patent Images
1. A method of manufacturing a photoelectric conversion device comprising the steps of:
- forming a first impurity non-single-crystalline crystalline semiconductor layer of a first conductivity type,forming a first intrinsic non-single-crystalline semiconductor layer,forming a second impurity non-single-crystalline semiconductor layer of a second conductivity type opposite said first conductivity type, said first and second impurity semiconductor layers and said first intrinsic semiconductor layer in between constituting a first photoelectric conversion element,forming a metal layer selected from the group consisting of molybdenum, tungsten, titanium and chromium,converting the interface between the metal layer and the semiconductor layer to a metal silicide layer with a thickness of 5-20 Å
by virtue of a thermal reaction,etching off the metal layer remaining on the metal silicide layer,forming a third impurity non=single-crystalline semiconductor layer of said first conductivity type,forming a second intrinsic non-single crystalline layer,forming a fourth impurity non-single-crystalline semiconductor layer of said second conductivity type opposite said first conductivity type, said third and fourth impurity semiconductor layer in between constituting a second photoelectric conversion element.
0 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to a semiconductor photoelectric conversion device which has a laminate member composed of a plurality of PIN structures formed one on the other. The manufacturing method includes a laminate member forming step and an electrode forming step. In the laminate member forming step, the first and second PIN structures and the transparent conductive layers are formed. In the electorde forming step a metal layer is annealed to form a metal silicide layer and the remaining metal layer is removed.
82 Citations
4 Claims
-
1. A method of manufacturing a photoelectric conversion device comprising the steps of:
-
forming a first impurity non-single-crystalline crystalline semiconductor layer of a first conductivity type, forming a first intrinsic non-single-crystalline semiconductor layer, forming a second impurity non-single-crystalline semiconductor layer of a second conductivity type opposite said first conductivity type, said first and second impurity semiconductor layers and said first intrinsic semiconductor layer in between constituting a first photoelectric conversion element, forming a metal layer selected from the group consisting of molybdenum, tungsten, titanium and chromium, converting the interface between the metal layer and the semiconductor layer to a metal silicide layer with a thickness of 5-20 Å
by virtue of a thermal reaction,etching off the metal layer remaining on the metal silicide layer, forming a third impurity non=single-crystalline semiconductor layer of said first conductivity type, forming a second intrinsic non-single crystalline layer, forming a fourth impurity non-single-crystalline semiconductor layer of said second conductivity type opposite said first conductivity type, said third and fourth impurity semiconductor layer in between constituting a second photoelectric conversion element. - View Dependent Claims (2, 3, 4)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei
-
Primary Examiner(s)NOT, DEFINED
-
Assistant Examiner(s)Johnson, Lori-Ann
-
Application NumberUS07/321,056Time in Patent Office621 DaysField of Search156/272.2, 156/272.8, 156/273.3, 156/300, 156/603, 156/D80, 65/33, 29/572, 437/2, 437/101, 437/173, 437/240, 148/D3-D4, 148/D122-D123US Class Current438/74CPC Class CodesH01L 31/022466 made of transparent conduct...H01L 31/076 Multiple junction or tandem...Y02E 10/548 Amorphous silicon PV cellsY10S 148/003 AnnealY10S 148/004 Annealing, incoherent light
