Vertical power MOS transistor

• US 4,972,240 A
• Filed: 03/03/1989
• Issued: 11/20/1990
• Est. Priority Date: 03/04/1988
• Status: Expired due to Term

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Murakami, Koichi, Hirota, Yukitsugu, Mihara, Teruyoshi
• Primary Examiner(s): Wojciechowicz, Edward J.
• Application Number:
  US07/318,569
• Time in Patent Office: 627 Days
• Field of Search: 357/23.4, 357/23.13, 357/55, 357/68
• US Class Current: 257/335
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices

Abstract

A vertical power MOS transistor, in which a gate oxide film is formed over partial areas of a semiconductor substrate having a first conductivity type, which functions as a drain, a channel region having a second conductivity type formed in the substrate, and a source region having the first conductivity type, formed in the channel region, and a gate electrode is formed on the gate oxide film, in which an insulating film covers the gate electrode, and a source electrode is formed on the insulating film, and in which an ohmic contact electrode is formed on portions of a source region an a channel region, and a coupling member connects the ohmic contact electrode with the source electrode to separate the source electrode from the gate electrode edge portion.

Claims

1. A vertical power MOS transistor, comprising:

a semiconductor substrate having a first conductivity type, which functions as a drain;

a channel region having a second conductivity type, formed in the semiconductor substrate;

a source region having the first conductivity type, formed in the channel region;

a first insulating film formed over portions of the source region, the channel region and the semiconductor substrate;

a gate electrode formed on the first insulating film;

a second insulating film for covering the gate electrode formed on the first insulating film;

a source electrode formed on the second insulating film except the periphery thereof;

an ohmic contact electrode formed on parts of the source region and the channel region in the substrate, the ohmic contact electrode being separated from the source electrode; and

a coupling member for connecting a part of the ohmic contact electrode with the source electrode.

2. The transistor of claim 1, wherein a high concentration region having the second conductivity type is formed in the channel region to connect the ohmic contact electrode with the channel region via the high concentration region.

3. The transistor of claim 1, wherein the thickness of the coupling member is the same as that of the ohmic contact electrode.

4. The transistor of claim 1, wherein the thickness of the coupling member is smaller than that of the ohmic contact electrode.

5. A vertical power MOS transistor, comprising:

a semiconductor substrate having a first conductivity type, which functions as a drain;

a channel region having a second conductivity type, formed in the semiconductor substrate;

a source region having the first conductivity type, formed in the channel region;

a first insulating film formed over portions of the source region, the channel region and the semiconductor substrate;

a gate electrode formed on the first insulating film;

a second insulating film for covering the entire gate electrode formed on the first insulating film;

a contact connection electrode including a source electrode contact member formed on the second insulating film, an ohmic contact electrode member formed on the portions of the source region and the channel region in the substrate, and a coupling member for connecting a part of the ohmic contact electrode member with the source electrode contact member;

a third insulating film formed on at least the ohmic contact electrode member and the coupling member of the contact connection electrode and a part of the second insulating film; and

a source electrode formed on the source electrode contact member except the periphery thereof and the third insulating film, the source electrode being separated from the second insulating film.