Vertical power MOS transistor
First Claim
1. A vertical power MOS transistor, comprising:
- a semiconductor substrate having a first conductivity type, which functions as a drain;
a channel region having a second conductivity type, formed in the semiconductor substrate;
a source region having the first conductivity type, formed in the channel region;
a first insulating film formed over portions of the source region, the channel region and the semiconductor substrate;
a gate electrode formed on the first insulating film;
a second insulating film for covering the gate electrode formed on the first insulating film;
a source electrode formed on the second insulating film except the periphery thereof;
an ohmic contact electrode formed on parts of the source region and the channel region in the substrate, the ohmic contact electrode being separated from the source electrode; and
a coupling member for connecting a part of the ohmic contact electrode with the source electrode.
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Accused Products
Abstract
A vertical power MOS transistor, in which a gate oxide film is formed over partial areas of a semiconductor substrate having a first conductivity type, which functions as a drain, a channel region having a second conductivity type formed in the substrate, and a source region having the first conductivity type, formed in the channel region, and a gate electrode is formed on the gate oxide film, in which an insulating film covers the gate electrode, and a source electrode is formed on the insulating film, and in which an ohmic contact electrode is formed on portions of a source region an a channel region, and a coupling member connects the ohmic contact electrode with the source electrode to separate the source electrode from the gate electrode edge portion.
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Citations
5 Claims
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1. A vertical power MOS transistor, comprising:
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a semiconductor substrate having a first conductivity type, which functions as a drain; a channel region having a second conductivity type, formed in the semiconductor substrate; a source region having the first conductivity type, formed in the channel region; a first insulating film formed over portions of the source region, the channel region and the semiconductor substrate; a gate electrode formed on the first insulating film; a second insulating film for covering the gate electrode formed on the first insulating film; a source electrode formed on the second insulating film except the periphery thereof; an ohmic contact electrode formed on parts of the source region and the channel region in the substrate, the ohmic contact electrode being separated from the source electrode; and a coupling member for connecting a part of the ohmic contact electrode with the source electrode. - View Dependent Claims (2, 3, 4)
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5. A vertical power MOS transistor, comprising:
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a semiconductor substrate having a first conductivity type, which functions as a drain; a channel region having a second conductivity type, formed in the semiconductor substrate; a source region having the first conductivity type, formed in the channel region; a first insulating film formed over portions of the source region, the channel region and the semiconductor substrate; a gate electrode formed on the first insulating film; a second insulating film for covering the entire gate electrode formed on the first insulating film; a contact connection electrode including a source electrode contact member formed on the second insulating film, an ohmic contact electrode member formed on the portions of the source region and the channel region in the substrate, and a coupling member for connecting a part of the ohmic contact electrode member with the source electrode contact member; a third insulating film formed on at least the ohmic contact electrode member and the coupling member of the contact connection electrode and a part of the second insulating film; and a source electrode formed on the source electrode contact member except the periphery thereof and the third insulating film, the source electrode being separated from the second insulating film.
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Specification