Thin film electroluminescence device
First Claim
1. A thin film electroluminescence device comprising:
- a substrate,a transparent electrode layer formed on said substrate,an insulating layer consisting of one or more constituent layers formed on said transparent electrode layer, at least one of said constituent insulating layers comprising a crystalline aluminum nitride or boron nitride wherein the crystallinity of said crystalline nitride is 1 or more when indicated by a reciprocal number of the half width of the X-ray diffraction pattern,an electroluminescence emitting layer comprising an electroluminescence host material and an activator, formed on said constituent insulating layer comprising a crystalline nitride, said electroluminescence host material being an alkali earth chalcogen compound, and said activator being a rare earth element, anda transparent back electrode layer formed on said electroluminescence layer.
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Abstract
A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.
47 Citations
21 Claims
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1. A thin film electroluminescence device comprising:
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a substrate, a transparent electrode layer formed on said substrate, an insulating layer consisting of one or more constituent layers formed on said transparent electrode layer, at least one of said constituent insulating layers comprising a crystalline aluminum nitride or boron nitride wherein the crystallinity of said crystalline nitride is 1 or more when indicated by a reciprocal number of the half width of the X-ray diffraction pattern, an electroluminescence emitting layer comprising an electroluminescence host material and an activator, formed on said constituent insulating layer comprising a crystalline nitride, said electroluminescence host material being an alkali earth chalcogen compound, and said activator being a rare earth element, and a transparent back electrode layer formed on said electroluminescence layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification