Method of fabricating a semiconductor pressure sensor

• US 4,975,390 A
• Filed: 12/08/1987
• Issued: 12/04/1990
• Est. Priority Date: 12/18/1986
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Yoshihara, Shinji, Funahashi, Tomohiro, Fujii, Tetsuo, Sakai, Minekazu, Kuroyanagi, Akira, Kuroyanagi, Susumu
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): McAndrews, Kevin
• Application Number:
  US07/132,573
• Time in Patent Office: 1,092 Days
• Field of Search: 437/228, 437/225, 437/901, 437/238, 437/235, 148/DIG. 135, 148/DIG. 12, 357/26, 156/653, 156/657
• US Class Current: 438/53
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 148/135 Removal of substrate

Abstract

Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.

Claims

1. A method of fabricating a semiconductor pressure sensor, comprising the steps of:

(a) forming a recess in a first main surface of a first substrate;

(b) forming a through-hole extending from a second main surface other than said first main surface of the first substrate to the recess formed in the first main surface, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole;

(c) doping with an impurity from a main surface of a second semiconductor substrate to form a piezoresistive layer in a predetermined region of the second substrate;

(d) forming a diaphragm layer on the main surface of the second substrate;

(e) bonding the first main surface of the first substrate with the diaphragm layer of the second substrate so that the piezoresistive layer is positioned at least partially over the recess; and

(f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.

2. A method according to claim 1, wherein the step of forming a diaphragm layer comprises the step of forming an insulating layer.

3. A method according to claim 1, wherein in the step of etching away a portion of the second substrate comprises the step of etching away a portion of the second substrate to leave only the diaphragm layer to act as a diaphragm, along with the piezoresistive layer.

4. A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole which has a diameter smaller than that of the recess.

5. A method according to claim 4, wherein the step of forming a recess comprises the step of forming a recess having a diameter in a range of from 40 to 100 μ

m and a depth in a range of from 10 to 40 μ

m in a first substrate having a thickness in a range of from 400 to 500 μ

m, wherein the step of forming a through-hole comprises the step of forming a through hole having a diameter in the range of from 20 to 50 μ

m, and wherein the step of forming a diaphragm layer comprises the step of forming a diaphragm layer having a thickness in a range of from 1 to 5 μ

m.

6. A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole in a direction oblique to the second main surface.

7. A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole at different angles from said first and second main surfaces of said first substrate.

8. A method according to claim 1, further comprising the steps of forming a plurality of through-holes other than said through-hole.

9. A method according to claim 1, wherein the step of forming a through-hole comprises the steps of forming a hole midway through said first substrate to form a first portion and removing said first portion at a final stage of a wafer forming step to form the through-hole.

10. A method according to claim 1, wherein the step of forming a through-hole by removing said left portion includes the step of forming a through-hole using oblique illumination by a laser beam.

11. A method according to claim 1, wherein the step of forming a through-hole further comprises the step of forming a through-hole with a laser beam.

12. A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole with an anisotropic etching.

13. A method of fabricating a semiconductor pressure sensor, comprising the steps of:

(a) forming a recess in a first main surface of a first substrate;

(b) forming a through-hole extending from a second main surface of the first substrate to the recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole;

(c) doping a second substrate of a semiconductor material with an impurity to form a piezoresistive layer in a predetermined region of the second substrate;

(d) forming a diaphragm layer on a main surface of the substrate of the semiconductor;

(e) bonding the first main surface of the first substrate to the diaphragm layer, so that the piezoresistive layer is positioned at least partially over the recess; and

(f) etching away at least a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, to leave the piezoresistive layer on the diaphragm layer.

14. A method of fabricating a semiconductor pressure sensor, comprising the steps of:

(a) forming a recess in a first main surface of a first substrate;

(b) forming a through-hole extending from a second main surface of the first substrate to the recess, said through-hole having a smaller diameter than said recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole;

(c) doping a second substrate of a semiconductor material with an impurity from a main surface of the second substrate of the semiconductor, to form a piezoresistive layer in a predetermined region of the second substrate;

(d) forming a diaphragm layer on the main surface of the second substrate;

(e) bonding the first main surface of the first substrate to the diaphragm layer formed on the main surface of the second substrate, so that the piezoresistive element is positioned at least partially over the recess; and

(f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.